SLVSBF1A May   2012  – February 2019 TPS53014

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Operation
      2. 7.3.2 Auto-Skip Eco-Mode Control
      3. 7.3.3 Drivers
      4. 7.3.4 5-Volt Regulator
      5. 7.3.5 Soft Start and Pre-Biased Soft Start
      6. 7.3.6 Overcurrent Protection
      7. 7.3.7 Over/Undervoltage Protection
      8. 7.3.8 UVLO Protection
      9. 7.3.9 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Typical Application
      1. 8.1.1 Detailed Design Procedure
        1. 8.1.1.1 Component Selection
          1. 8.1.1.1.1 Inductor
          2. 8.1.1.1.2 Output Capacitor
          3. 8.1.1.1.3 Input Capacitor
          4. 8.1.1.1.4 Bootstrap Capacitor
          5. 8.1.1.1.5 VREG5 Capacitor
          6. 8.1.1.1.6 Choose Output Voltage Resistors
  9. 9 Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Community Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.3 Drivers

TPS53014 contains two high-current resistive MOSFET gate drivers. The low-side driver is a PGND referenced, VREG5 powered driver designed to drive the gate of a high-current, low RDS(on) N-channel MOSFET whose source is connected to PGND. The high-side driver is a floating SW referenced, VBST powered driver designed to drive the gate of a high-current, low RDS(on) N-channel MOSFET. To maintain the VBST voltage during the high-side driver ON time, a capacitor is placed from SW to VBST. Each driver draws average current equal to Gate Charge (Qg @ Vgs = 5V) times Switching frequency (fsw). To prevent cross-conduction, there is a narrow dead-time when both high-side and low-side drivers are OFF between each driver transition. During this time the inductor current is carried by one of the MOSFETs body diodes.