SLUSB56B November 2012 – April 2019 TPS53819A
PRODUCTION DATA.
The low-side driver is designed to drive high-current, low-RDS(on), N-channel MOSFETs. The drive capability is represented by the internal resistance, which is 0.9 Ω for VREG to DRVL and 0.5 Ω for DRVL to GND. A dead-time period to prevent shoot through is internally generated between high-side MOSFET OFF to low-side MOSFET ON, and low-side MOSFET OFF to high-side MOSFET ON. The 5-V, VREG supply voltage delivers the bias voltage. A bypass capacitor connected between the VREG and GND pins supplies the instantaneous drive current. Equation 1 shows the average low-side gate drive current.