SLVSAU1E May 2011 – August 2016 TPS54228
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VIN, EN | –0.3 | 20 | V |
VBST | –0.3 | 26 | ||
VBST (transient, 10 ns) | –0.3 | 28 | ||
VBST (vs SW) | –0.3 | 6.5 | ||
VFB, SS | –0.3 | 6.5 | ||
SW | –2 | 20 | ||
SW (transient, 10 ns) | –3 | 22 | ||
Output voltage | VREG5 | –0.3 | 6.5 | V |
GND | –0.3 | 0.3 | ||
Voltage from GND to thermal pad, Vdiff | –0.2 | 0.2 | V | |
Operating junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIN | Supply input voltage | 4.5 | 18 | V | ||
VI | Input voltage | VBST | –0.1 | 24 | V | |
VBST (transient, 10 ns) | –0.1 | 27 | ||||
VBST(vs SW) | –0.1 | 5.7 | ||||
SS | –0.1 | 5.7 | ||||
EN | –0.1 | 18 | ||||
VFB | –0.1 | 5.5 | ||||
SW | –1.8 | 18 | ||||
SW (transient, 10 ns) | –3 | 21 | ||||
GND | –0.1 | 0.1 | ||||
VO | Output voltage, VREG5 | –0.1 | 5.7 | V | ||
IO | Output current, IVREG5 | 0 | 10 | mA | ||
IOUT | Operating output current(1) | 2 | A | |||
TA | Operating free-air temperature | –40 | 85 | °C |
THERMAL METRIC(1) | TPS54228 | UNITS | |||
---|---|---|---|---|---|
DDA (SO) | D (SOIC) | DRC (VSON) | |||
8 PINS | 8 PINS | 10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 45.3 | 114.4 | 43.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 54.8 | 60.8 | 55.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 16.2 | 55.7 | 18.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 6.6 | 17.4 | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 16 | 55.1 | 19.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 8.5 | — | 5.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IVIN | Operating, non-switching supply current | VIN current, TA = 25°C, EN = 5 V, VFB = 0.8 V |
800 | 1200 | µA | |
IVINSDN | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 5 | 10 | µA | |
LOGIC THRESHOLD | ||||||
VEN | EN high-level input voltage | EN | 1.6 | V | ||
EN low-level input voltage | EN | 0.6 | V | |||
REN | EN pin resistance to GND | VEN = 12 V | 220 | 440 | 880 | kΩ |
VFB VOLTAGE AND DISCHARGE RESISTANCE | ||||||
VFBTH | VFB threshold voltage | TA = 25°C, VO = 1.05 V, IO = 10 mA, Eco-Mode™ operation |
770 | mV | ||
TA = 25°C, VO = 1.05 V, continuous mode operation |
749 | 765 | 781 | mV | ||
IVFB | VFB input current | VFB = 0.8 V, TA = 25°C | 0 | ±0.1 | µA | |
VREG5 OUTPUT | ||||||
VVREG5 | VREG5 output voltage | TA = 25°C, 6 V < VIN < 18 V, 0 < IVREG5 < 5 mA |
5.2 | 5.5 | 5.7 | V |
VLN5 | Line regulation | 6 V < VIN < 18 V, IVREG5 = 5 mA | 25 | mV | ||
VLD5 | Load regulation | 0 mA < IVREG5 < 5 mA | 100 | mV | ||
IVREG5 | Output current | VIN = 6 V, VREG5 = 4 V, TA = 25°C | 60 | mA | ||
MOSFET | ||||||
RDS(on) | High side switch resistance | DDA and D packages 25°C, VBST – SW = 5.5 V | 155 | mΩ | ||
DRC package, 25°C, VBST – SW = 5.5 V | 165 | |||||
Low side switch resistance | 25°C | 108 | ||||
Iocl | Current limit | DDA and DRC packages, L out = 2.2 µH(1) | 2.5 | 3.3 | 4.7 | A |
D package, L out = 2.2 µH(1) | 2.3 | 3 | 4.5 | A | ||
TSDN | Thermal shutdown threshold | Shutdown temperature(1) | 165 | °C | ||
Hysteresis(1) | 35 | |||||
tON | On time | VIN = 12 V, VO = 1.05 V | 150 | ns | ||
tOFF(MIN) | Minimum off time | TA = 25°C, VFB = 0.7 V | 260 | 310 | ns | |
ISS | Soft-start charge current | VSS = 1 V | 1.4 | 2 | 2.6 | µA |
Soft-start discharge current | VSS = 0.5 V | 0.1 | 0.2 | mA | ||
UVLO | Undervoltage lockout threshold | Wake up VREG5 voltage | 3.45 | 3.75 | 4.05 | V |
Hysteresis VREG5 voltage | 0.13 | 0.32 | 0.48 |