SLVS632K January 2006 – January 2024 TPS5430 , TPS5431
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE (VIN PIN) | ||||||
IQ(VIN) | VIN quiescent current | Non-switching, VSENSE = 2V, PH pin open | 2 | 4.4 | mA | |
ISD(VIN) | VIN shutdown supply current | Shutdown, ENA = 0 V | 15 | 50 | µA | |
UVLO | ||||||
VINUVLO(R) | VIN UVLO rising threshold | VVIN rising | 5.3 | 5.5 | V | |
VINUVLO(H) | VIN UVLO hysteresis | 0.35 | V | |||
VOLTAGE REFERENCE | ||||||
VFB | FB voltage | TJ = 25°C | 1.202 | 1.221 | 1.239 | V |
VFB | FB voltage | TJ = –40°C to 125°C | 1.196 | 1.221 | 1.245 | V |
OSCILLATOR | ||||||
fSW | Switching frequency | 400 | 500 | 600 | kHz | |
tON(min) | Minimum ON pulse width . | 150 | 200 | ns | ||
DMAX | Maximum Duty Cycle | fSW = 500 kHz | 87% | 89% | ||
ENABLE (ENA PIN) | ||||||
VEN(R) | ENA voltage rising threshold | 1.3 | V | |||
VEN(F) | ENA voltage falling threshold | 0.5 | V | |||
VEN(H) | ENA voltage hysteresis | 325 | mV | |||
tSS | Internal slow-start time (0~100%) | 5.4 | 8 | 10 | ms | |
OVERCURRENT PROTECTION | ||||||
IHS(OC) | High-side peak current limit | 4.0 | 5.0 | 6.0 | A | |
Hiccup time before re-start | 13 | 16 | 20 | ms | ||
OUTPUT MOSFET | ||||||
RDSON(HS) | High-side MOSFET on-resistance | VIN = 12 V, VBOOT-SW = 4.5 V | 100 | 230 | mΩ | |
RDSON(HS) | High-side MOSFET on-resistance | VIN = 5.5 V, VBOOT-SW = 4.0 V | 125 | mΩ | ||
THERMAL SHUTDOWN | ||||||
TJ(SD) | Thermal shutdown threshold (1) | Temperature rising | 135 | 162 | °C | |
TJ(HYS) | Thermal shutdown hysteresis (1) | 14 | °C |