SLVSC61A November   2013  – October 2016 TPS54341

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency PWM Control
      2. 7.3.2  Slope Compensation Output Current
      3. 7.3.3  Low Dropout Operation and Bootstrap Voltage (BOOT)
      4. 7.3.4  Error Amplifier
      5. 7.3.5  Adjusting the Output Voltage
      6. 7.3.6  Enable and Adjusting Undervoltage Lockout
      7. 7.3.7  Soft-Start/Tracking Pin (SS/TR)
      8. 7.3.8  Sequencing
      9. 7.3.9  Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
      10. 7.3.10 Accurate Current Limit Operation and Maximum Switching Frequency
      11. 7.3.11 Synchronization to RT/CLK Pin
      12. 7.3.12 Power Good (PWRGD Pin)
      13. 7.3.13 Overvoltage Protection
      14. 7.3.14 Thermal Shutdown
      15. 7.3.15 Small-Signal Model for Loop Response
      16. 7.3.16 Simple Small-Signal Model for Peak-Current-Mode Control
      17. 7.3.17 Small Signal Model for Frequency Compensation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Pulse Skip Eco-mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Selecting the Switching Frequency
        2. 8.2.2.2  Output Inductor Selection (LO)
        3. 8.2.2.3  Output Capacitor
        4. 8.2.2.4  Catch Diode
        5. 8.2.2.5  Input Capacitor
        6. 8.2.2.6  Slow-Start Capacitor
        7. 8.2.2.7  Bootstrap Capacitor Selection
        8. 8.2.2.8  Undervoltage Lockout Set Point
        9. 8.2.2.9  Output Voltage and Feedback Resistors Selection
        10. 8.2.2.10 Compensation
        11. 8.2.2.11 Discontinuous Conduction Mode and Eco-mode Boundary
        12. 8.2.2.12 Estimated Circuit Area
        13. 8.2.2.13 Power Dissipation Estimate
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage VIN –0.3 45 V
EN –0.3 8.4
BOOT 53
FB –0.3 3
COMP –0.3 3
PWRGD –0.3 6
SS/TR –0.3 3
RT/CLK –0.3 3.6
Output voltage BOOT-SW 8 V
SW –0.6 45
SW, transient (10 ns) –2 45
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Supply input voltage 4.5 42 V
VO Output voltage 0.8 41.1 V
IO Output current 0 3.5 A
TJ Junction Temperature –40 150 °C

Thermal Information

THERMAL METRIC(1)(2) TPS54341 UNIT
DPR (WSON)
10 PINS
RθJA Junction-to-ambient thermal resistance 35.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.1 °C/W
RθJB Junction-to-board thermal resistance 12.3 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 12.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.2 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.

Electrical Characteristics

TJ = –40°C to 150°C, VIN = 4.5 V to 42 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage 4.5 42 V
Internal undervoltage lockout threshold Rising 4.1 4.3 4.48 V
Internal undervoltage lockout threshold hysteresis 325 mV
Shutdown supply current EN = 0 V, 25°C, 4.5 V ≤ VIN ≤ 42 V 2.25 4.5 μA
Operating: nonswitching supply current FB = 0.9 V, TA = 25°C 152 200
ENABLE AND UVLO (EN PIN)
Enable threshold voltage No voltage hysteresis, rising and falling 1.1 1.2 1.3 V
Input current Enable threshold = 50 mV –4.6 μA
Enable threshold = –50 mV –0.58 –1.2 –1.8
Hysteresis current –2.2 –3.4 –4.5 μA
Enable to COMP active VIN = 12 V, TA = 25°C 540 µs
VOLTAGE REFERENCE
Voltage reference 0.792 0.8 0.808 V
HIGH-SIDE MOSFET
On-resistance VIN = 12 V, BOOT-SW = 6 V 87 185
ERROR AMPLIFIER
Input current 50 nA
Error amplifier transconductance (gm) –2 μA < ICOMP < 2 μA, VCOMP = 1 V 350 μMhos
Error amplifier transconductance (gm)
during soft-start
–2 μA < ICOMP < 2 μA, VCOMP = 1 V, VFB = 0.4 V 77 μMhos
Error amplifier DC gain VFB = 0.8 V 10000 V/V
Min unity gain bandwidth 2500 kHz
Error amplifier source and sink V(COMP) = 1 V, 100-mV overdrive ±30 μA
COMP to SW current transconductance 12 A/V
CURRENT LIMIT
Current limit threshold All VIN and temperatures, open loop(1) 4.5 5.5 6.8 A
All temperatures, VIN = 12 V, open loop(1) 4.5 5.5 6.3
VIN = 12 V, TA = 25°C, open loop(1) 5.2 5.5 5.9
Current limit threshold delay 60 ns
THERMAL SHUTDOWN
Thermal shutdown 176 °C
Thermal shutdown hysteresis 12 °C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Switching frequency range using RT mode 100 2500 kHz
ƒSW Switching frequency RT = 200 kΩ 450 500 550 kHz
Switching frequency range using CLK mode 160 2300 kHz
Minimum CLK input pulse width 15 ns
RT/CLK high threshold 1.55 2 V
RT/CLK low threshold 0.5 1.2 V
RT/CLK falling edge to SW rising edge delay Measured at 500 kHz with RT resistor in series 55 ns
PLL lock in time Measured at 500 kHz 78 μs
SOFT START AND TRACKING (SS/TR PIN)
Charge current VSS/TR = 0.4 V 1.7 µA
SS/TR-to-FB matching VSS/TR = 0.4 V 42 mV
SS/TR-to-reference crossover 98% nominal 1.16 V
SS/TR discharge current (overload) FB = 0 V, VSS/TR = 0.4 V 354 µA
SS/TR discharge voltage FB = 0 V 54 mV
POWER GOOD (PWRGD PIN)
FB threshold for PWRGD low FB falling 90%
FB threshold for PWRGD high FB rising 93%
FB threshold for PWRGD low FB rising 108%
FB threshold for PWRGD high FB falling 106%
Hysteresis FB falling 2.5%
Output high leakage VPWRGD = 5.5 V, TA = 25°C 10 nA
On resistance IPWRGD = 3 mA, VFB < 0.79 V 45 Ω
Minimum VIN for defined output VPWRGD < 0.5 V, IPWRGD = 100 µA 0.9 2 V
Open Loop current limit measured directly at the SW pin and is independent of the inductor value and slope compensation.

Typical Characteristics

TPS54341 C001_SLVSBO1.png Figure 1. On Resistance vs Junction Temperature
TPS54341 C003_SLVSC39.png
Figure 3. Switch Current Limit
vs Junction Temperature
TPS54341 C005_SLVSBO1.png
Figure 5. Switching Frequency
vs Junction Temperature
TPS54341 C007_SLVSBO1.png Figure 7. Switching Frequency vs
RT/CLK Resistance High Frequency Range
TPS54341 C009_SLVSBO1.png Figure 9. EA Transconductance During Soft-Start
vs Junction Temperature
TPS54341 C011_SLVSBO1.png Figure 11. EN Pin Current vs Junction Temperature
TPS54341 C013_SLVSBO1.png Figure 13. EN Pin Current Hysteresis
vs Junction Temperature
TPS54341 C015_SLVSBO1.png Figure 15. Shutdown Supply Current
vs Junction Temperature
TPS54341 C017_SLVSBO1.png Figure 17. VIN Supply Current
vs Junction Temperature
TPS54341 C019_SLVSBO1.png Figure 19. BOOT-SW UVLO
vs Junction Temperature
TPS54341 C021_SLVSBO1.png Figure 21. PWRGD On Resistance
vs Junction Temperature
TPS54341 C024_SLVSBO1.png Figure 23. SS/TR to FB Offset vs FB
TPS54341 C026_SLVSBO1.png Figure 25. 5-V Start and Stop Voltage (see Low Dropout Operation and Bootstrap Voltage (BOOT))
TPS54341 C002_SLVSBO1.png Figure 2. Voltage Reference
vs Junction Temperature
TPS54341 C004_SLVSC61.png Figure 4. Switch Current Limit vs Input Voltage
TPS54341 C006_SLVSBO1.png Figure 6. Switching Frequency vs
RT/CLK Resistance Low Frequency Range
TPS54341 C008_SLVSBO1.png Figure 8. EA Transconductance
vs Junction Temperature
TPS54341 C010_SLVSBO1.png Figure 10. EN Pin Voltage vs Junction Temperature
TPS54341 C012_SLVSBO1.png Figure 12. EN Pin Current vs Junction Temperature
TPS54341 C014_SLVSBO1.png Figure 14. Switching Frequency vs FB
TPS54341 C016_SLVSC61.png
Figure 16. Shutdown Supply Current
vs Input Voltage (VIN)
TPS54341 C018_SLVSC61.png
Figure 18. VIN Supply Current vs Input Voltage
TPS54341 C020_SLVSBO1.png Figure 20. Input Voltage UVLO
vs Junction Temperature
TPS54341 C022_SLVSBO1.png Figure 22. PWRGD Threshold
vs Junction Temperature
TPS54341 C025_SLVSBO1.png Figure 24. SS/TR to FB Offset vs Temperature