The TPS5450-Q1 is a high-output-current PWM converter that integrates a low-resistance high-side N-channel MOSFET. Included on the substrate with the listed features are a high-performance voltage error amplifier that provides tight voltage regulation accuracy under transient conditions, an undervoltage-lockout circuit to prevent start-up until the input voltage reaches 5.5 V, an internally set slow-start circuit to limit inrush currents, and a voltage feedforward circuit to improve the transient response. Using the ENA pin, shutdown supply current is reduced to 18 μA typically. Other features include an active-high enable, overcurrent limiting, overvoltage protection, and thermal shutdown. To reduce design complexity and external component count, the TPS5450-Q1 feedback loop is internally compensated.
The TPS5450-Q1 device is available in a thermally enhanced, 8-pin SOIC PowerPAD™ package. TI provides evaluation modules and software tools to aid in achieving high-performance power supply designs to meet aggressive equipment development cycles.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
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TPS5450-Q1 | HSOIC (8) | 4.89 mm × 3.90 mm |
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PIN | DESCRIPTION | |
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NAME | NO. | |
BOOT | 1 | Boost capacitor for the high-side FET gate driver. Connect 0.01-μF low-ESR capacitor from BOOT pin to PH pin. |
NC | 2, 3 | No internal connection |
VSENSE | 4 | Feedback voltage for the regulator. Connect to output voltage divider. |
ENA | 5 | On/off control. Below 0.5 V, the device stops switching. Float the pin to enable. |
GND | 6 | Ground. Connect to thermal pad. |
VIN | 7 | Input supply voltage. Bypass VIN pin to GND pin close to device package with a high-quality low-ESR ceramic capacitor. |
PH | 8 | Source of the high side power MOSFET. Connected to external inductor and diode. |
PowerPAD | 9 | GND pin must be connected to the exposed pad for proper operation. |