SLVS757E March 2007 – July 2022 TPS5450
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
BOOT | 1 | O | Boost capacitor for the high-side FET gate driver. Connect 0.01-μF, low-ESR capacitor from BOOT pin to PH pin. |
NC | 2, 3 | – | Not connected internally. |
VSENSE | 4 | I | Feedback voltage for the regulator. Connect to output voltage divider. |
ENA | 5 | I | On and off control. Below 0.5 V, the device stops switching. Float the pin to enable. |
GND | 6 | – | Ground. Connect to PowerPAD. |
VIN | 7 | I | Input supply voltage. Bypass VIN pin to GND pin close to device package with a high-quality, low-ESR ceramic capacitor. |
PH | 8 | O | Source of the high-side power MOSFET. Connected to external inductor and diode. |
PowerPAD | 9 | – | GND pin must be connected to the exposed pad for proper operation. |