SLVSH95 July   2024 TPS546C25

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  D-CAP4 Control
        1. 6.3.1.1 Loop Compensation
      2. 6.3.2  Internal VCC LDO and Using an External Bias on VCC Pin and VDRV Pin
      3. 6.3.3  Input Undervoltage Lockout (UVLO)
        1. 6.3.3.1 Fixed VCC_OK UVLO
        2. 6.3.3.2 Fixed VDRV UVLO
        3. 6.3.3.3 Programmable PVIN UVLO
        4. 6.3.3.4 Control (CNTL)Enable
      4. 6.3.4  Differential Remote Sense and Internal, External Feedback Divider
      5. 6.3.5  Set the Output Voltage and VORST#
      6. 6.3.6  Start-Up and Shutdown
      7. 6.3.7  Dynamic Voltage Slew Rate
      8. 6.3.8  Set Switching Frequency
      9. 6.3.9  Switching Node (SW)
      10. 6.3.10 Overcurrent Limit and Low-side Current Sense
      11. 6.3.11 Negative Overcurrent Limit
      12. 6.3.12 Zero-Crossing Detection
      13. 6.3.13 Input Overvoltage Protection
      14. 6.3.14 Output Overvoltage and Undervoltage Protection
      15. 6.3.15 Overtemperature Protection
      16. 6.3.16 Telemetry
    4. 6.4 Device Functional Modes
      1. 6.4.1 Forced Continuous-Conduction Mode
      2. 6.4.2 DCM Light Load Operation
      3. 6.4.3 Powering the Device From a 12V Bus
      4. 6.4.4 Powering the Device From a Split-rail Configuration
      5. 6.4.5 Pin Strapping
        1. 6.4.5.1 Programming MSEL1
        2. 6.4.5.2 Programming PMB_ADDR
        3. 6.4.5.3 Programming MSEL2
        4. 6.4.5.4 Programming VSEL\FB
    5. 6.5 Programming
      1. 6.5.1 Supported PMBus Commands
  8. Register Maps
    1. 7.1  Conventions for Documenting Block Commands
    2. 7.2  (01h) OPERATION
    3. 7.3  (02h) ON_OFF_CONFIG
    4. 7.4  (03h) CLEAR_FAULTS
    5. 7.5  (04h) PHASE
    6. 7.6  (09h) P2_PLUS_WRITE
    7. 7.7  (0Ah) P2_PLUS_READ
    8. 7.8  (0Eh) PASSKEY
    9. 7.9  (10h) WRITE_PROTECT
    10. 7.10 (15h) STORE_USER_ALL
    11. 7.11 (16h) RESTORE_USER_ALL
    12. 7.12 (19h) CAPABILITY
    13. 7.13 (1Bh) SMBALERT_MASK
    14. 7.14 (20h) VOUT_MODE
    15. 7.15 (21h) VOUT_COMMAND
    16. 7.16 (22h) VOUT_TRIM
    17. 7.17 (24h) VOUT_MAX
    18. 7.18 (25h) VOUT_MARGIN_HIGH
    19. 7.19 (26h) VOUT_MARGIN_LOW
    20. 7.20 (27h) VOUT_TRANSITION_RATE
    21. 7.21 (29h) VOUT_SCALE_LOOP
    22. 7.22 (2Ah) VOUT_SCALE_MONITOR
    23. 7.23 (2Bh) VOUT_MIN
    24. 7.24 (33h) FREQUENCY_SWITCH
    25. 7.25 (35h) VIN_ON
    26. 7.26 (36h) VIN_OFF
    27. 7.27 (39h) IOUT_CAL_OFFSET
    28. 7.28 (40h) VOUT_OV_FAULT_LIMIT
    29. 7.29 (41h) VOUT_OV_FAULT_RESPONSE
    30. 7.30 (42h) VOUT_OV_WARN_LIMIT
    31. 7.31 (43h) VOUT_UV_WARN_LIMIT
    32. 7.32 (44h) VOUT_UV_FAULT_LIMIT
    33. 7.33 (45h) VOUT_UV_FAULT_RESPONSE
    34. 7.34 (46h) IOUT_OC_FAULT_LIMIT
    35. 7.35 (48h) IOUT_OC_LV_FAULT_LIMIT
    36. 7.36 (49h) IOUT_OC_LV_FAULT_RESPONSE
    37. 7.37 (4Ah) IOUT_OC_WARN_LIMIT
    38. 7.38 (4Fh) OT_FAULT_LIMIT
    39. 7.39 (50h) OT_FAULT_RESPONSE
    40. 7.40 (51h) OT_WARN_LIMIT
    41. 7.41 (55h) VIN_OV_FAULT_LIMIT
    42. 7.42 (60h) TON_DELAY
    43. 7.43 (61h) TON_RISE
    44. 7.44 (64h) TOFF_DELAY
    45. 7.45 (65h) TOFF_FALL
    46. 7.46 (78h) STATUS_BYTE
    47. 7.47 (79h) STATUS_WORD
    48. 7.48 (7Ah) STATUS_VOUT
    49. 7.49 (7Bh) STATUS_IOUT
    50. 7.50 (7Ch) STATUS_INPUT
    51. 7.51 (7Dh) STATUS_TEMPERATURE
    52. 7.52 (7Eh) STATUS_CML
    53. 7.53 (7Fh) STATUS_OTHER
    54. 7.54 (80h) STATUS_MFR_SPECIFIC
    55. 7.55 (88h) READ_VIN
    56. 7.56 (8Bh) READ_VOUT
    57. 7.57 (8Ch) READ_IOUT
    58. 7.58 (8Dh) READ_TEMPERATURE_1
    59. 7.59 (98h) PMBUS_REVISION
    60. 7.60 (99h) MFR_ID
    61. 7.61 (9Ah) MFR_MODEL
    62. 7.62 (9Bh) MFR_REVISION
    63. 7.63 (ADh) IC_DEVICE_ID
    64. 7.64 (AEh) IC_DEVICE_REV
    65. 7.65 (D1h) SYS_CFG_USER1
    66. 7.66 (D2h) PMBUS_ADDR
    67. 7.67 (D4h) COMP
    68. 7.68 (D5h) VBOOT_OFFSET_1
    69. 7.69 (D6h) STACK_CONFIG
    70. 7.70 (D8h) PIN_DETECT_OVERRIDE
    71. 7.71 (D9h) NVM_CHECKSUM
    72. 7.72 (DAh) READ_TELEMETRY
    73. 7.73 (79h) STATUS_ALL
    74. 7.74 (DDh) EXT_WRITE_PROTECTION
    75. 7.75 (A4h) IMON_CAL
    76. 7.76 (FCh) FUSION_ID0
    77. 7.77 (FDh) FUSION_ID1
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Input Capacitor Selection
        2. 8.2.3.2 Inductor Selection
        3. 8.2.3.3 Output Capacitor Selection
        4. 8.2.3.4 Compensation Selection
        5. 8.2.3.5 VCC and VRDV Bypass Capacitors
        6. 8.2.3.6 BOOT Capacitor Selection
        7. 8.2.3.7 VOSNS and GOSNS Capacitor Selection
        8. 8.2.3.8 PMBus Address Resistor Selection
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Thermal Performance on TPS546C25EVM
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
  • VBD|33
Thermal pad, mechanical data (Package|Pins)
Orderable Information

D-CAP4 Control

The device uses D-CAP4 control to achieve a fast load transient response while maintaining ease-of-use. The D-CAP4 control architecture includes an internal ripple generation network enabling the use of very lowESR output capacitors such as multi-layered ceramic capacitors (MLCC) and low ESR polymer capacitors. No external current sensing, ripple injection or voltage compensation networks are required with D-CAP4 control architecture. The role of the internal ripple generation network is to emulate the ripple component of the inductor current information and then combine with the voltage feedback signal to regulate the loop operation, allowing the use of ultra-low ESR polymer and multi-layer ceramic capacitors (MLCCs).

D-CAP4 control architecture reduces loop gain variation across VOUT, enabling a fast load transient response across the entire output voltage range with one ramp setting. Unlike earlier D-CAP2 and D-CAP3 architectures, D-CAP4 uses a fixed ramp amplitude each switching cycle and a forward GAIN path to improve transient response and pulse frequency jitter while an error integrator provides high DC set-point accuracy.

The Ramp amplitude per switching cycle is

Equation 1. Vramp×NphaseGAIN×1-VoutVin

Due to the limited number of pin-programmable Ramp and GAIN options, and the dependance of the control loop performance on the output inductor, TI recommends that designs using pin programming compensation consider the available loop options when selecting the inductor and the minimum and maximum capacitance that the compensation options support when selecting the capacitor.

When using PMBus programmed compensation through (D4h) COMP, the range and resolution of available Ramp voltages and GAIN options is generally broad enough that designs can follow a more traditional design flow where the inductor is selected based on switching frequency and ripple current, and then capacitors are selected to meet ripple and transient requirements, then finally Ramp and GAIN is selected to make sure of stability with the inductor and capacitor, however many designers can find following the Compensation First design flow to narrow the choice of inductors easier, and then selecting a more optimized Ramp / GAIN option after the inductor has been selected.

Compensation First Design Procedure

Evaluate the maximum inductor value, which can be used with each compensation option while still meeting the application transient requirements. To do this action, calculate the maximum dynamic output impedance needed to meet the transient requirements for the application.

Equation 2. Zoutdynamic<IOUTtransientVOUTtramsoemt

For each of the six pin programmable Vramp / GAIN options, calculate the maximum inductance that can be used with that ramp to achieve the required output impedance

Equation 3. Lmax=Zoutdynamic×Vsense×GAIN Fsw×Vramp

With the maximum inductor value, estimate the peak to peak inductor ripple current for each available Vramp / GAIN compensation option and select an inductor whose peak to peak ripple current is between 10% and 40% of the expected full load current.

Equation 4. ILpk-pk= VIN-VOUT×VOUTVIN×L×Fsw

Selecting an inductor close to the maximum inductor meeting the dynamic impedance requirements minimizes over design and reduces the minimum amount of capacitance required to maintain stability while picking a smaller inductor reduces the amount of capacitance required to meet large-signal overshoot requirements, especially at low input voltages.

After an inductor has been selected, calculate the closed loop, mid-band dynamic output impedance by arranging the maximum inductance equation

Equation 5. Zoutdynamic=Lmax×Vramp×FswVsense×GAIN

Note: When using the internal feedback divider, Vsense is the output voltage at the VOSNS pin. When using an external feedback divider, Vsense is the reference voltage at the VSEL/FB pin.

To estimate the linear transient performance

Equation 6. VOUTTransient=ZOUTDynamic×IOUTTransient

The minimum capacitance for stability is

Equation 7. COUTmin=2π×ZOUTDynamic×Fsw

The minimum capacitance to meet large signal overshoot is

Equation 8. COUTmin=IOUTTransient2×LVOUT×VOUTTransient

The maximum recommended capacitance places the L-C resonant frequency no less than ½ the integrator zero frequency, which can be estimated by

Equation 9. FRes>12×12×π×INT_TIME×GAIN