SLVSHH4 July   2024 TPS546E25

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  D-CAP4 Control
        1. 6.3.1.1 Loop Compensation
      2. 6.3.2  Internal VCC LDO and Using an External Bias on VCC Pin and VDRV Pin
      3. 6.3.3  Input Undervoltage Lockout (UVLO)
        1. 6.3.3.1 Fixed VCC_OK UVLO
        2. 6.3.3.2 Fixed VDRV UVLO
        3. 6.3.3.3 Programmable PVIN UVLO
        4. 6.3.3.4 Control (CNTL)Enable
      4. 6.3.4  Differential Remote Sense and Internal, External Feedback Divider
      5. 6.3.5  Set the Output Voltage and VORST#
      6. 6.3.6  Start-Up and Shutdown
      7. 6.3.7  Dynamic Voltage Slew Rate
      8. 6.3.8  Set Switching Frequency
      9. 6.3.9  Switching Node (SW)
      10. 6.3.10 Overcurrent Limit and Low-side Current Sense
      11. 6.3.11 Negative Overcurrent Limit
      12. 6.3.12 Zero-Crossing Detection
      13. 6.3.13 Input Overvoltage Protection
      14. 6.3.14 Output Overvoltage and Undervoltage Protection
      15. 6.3.15 Overtemperature Protection
      16. 6.3.16 Telemetry
    4. 6.4 Device Functional Modes
      1. 6.4.1 Forced Continuous-Conduction Mode
      2. 6.4.2 DCM Light Load Operation
      3. 6.4.3 Powering the Device From a 12V Bus
      4. 6.4.4 Powering the Device From a Split-rail Configuration
      5. 6.4.5 Pin Strapping
        1. 6.4.5.1 Programming MSEL1
        2. 6.4.5.2 Programming PMB_ADDR
        3. 6.4.5.3 Programming MSEL2
        4. 6.4.5.4 Programming VSEL\FB
    5. 6.5 Programming
      1. 6.5.1 Supported PMBus Commands
  8. 7 Register Maps
    1. 7.1  Conventions for Documenting Block Commands
    2. 7.2  (01h) OPERATION
    3. 7.3  (02h) ON_OFF_CONFIG
    4. 7.4  (03h) CLEAR_FAULTS
    5. 7.5  (04h) PHASE
    6. 7.6  (09h) P2_PLUS_WRITE
    7. 7.7  (0Ah) P2_PLUS_READ
    8. 7.8  (0Eh) PASSKEY
    9. 7.9  (10h) WRITE_PROTECT
    10. 7.10 (15h) STORE_USER_ALL
    11. 7.11 (16h) RESTORE_USER_ALL
    12. 7.12 (19h) CAPABILITY
    13. 7.13 (1Bh) SMBALERT_MASK
    14. 7.14 (20h) VOUT_MODE
    15. 7.15 (21h) VOUT_COMMAND
    16. 7.16 (22h) VOUT_TRIM
    17. 7.17 (24h) VOUT_MAX
    18. 7.18 (25h) VOUT_MARGIN_HIGH
    19. 7.19 (26h) VOUT_MARGIN_LOW
    20. 7.20 (27h) VOUT_TRANSITION_RATE
    21. 7.21 (29h) VOUT_SCALE_LOOP
    22. 7.22 (2Ah) VOUT_SCALE_MONITOR
    23. 7.23 (2Bh) VOUT_MIN
    24. 7.24 (33h) FREQUENCY_SWITCH
    25. 7.25 (35h) VIN_ON
    26. 7.26 (36h) VIN_OFF
    27. 7.27 (39h) IOUT_CAL_OFFSET
    28. 7.28 (40h) VOUT_OV_FAULT_LIMIT
    29. 7.29 (41h) VOUT_OV_FAULT_RESPONSE
    30. 7.30 (42h) VOUT_OV_WARN_LIMIT
    31. 7.31 (43h) VOUT_UV_WARN_LIMIT
    32. 7.32 (44h) VOUT_UV_FAULT_LIMIT
    33. 7.33 (45h) VOUT_UV_FAULT_RESPONSE
    34. 7.34 (46h) IOUT_OC_FAULT_LIMIT
    35. 7.35 (48h) IOUT_OC_LV_FAULT_LIMIT
    36. 7.36 (49h) IOUT_OC_LV_FAULT_RESPONSE
    37. 7.37 (4Ah) IOUT_OC_WARN_LIMIT
    38. 7.38 (4Fh) OT_FAULT_LIMIT
    39. 7.39 (50h) OT_FAULT_RESPONSE
    40. 7.40 (51h) OT_WARN_LIMIT
    41. 7.41 (55h) VIN_OV_FAULT_LIMIT
    42. 7.42 (60h) TON_DELAY
    43. 7.43 (61h) TON_RISE
    44. 7.44 (64h) TOFF_DELAY
    45. 7.45 (65h) TOFF_FALL
    46. 7.46 (78h) STATUS_BYTE
    47. 7.47 (79h) STATUS_WORD
    48. 7.48 (7Ah) STATUS_VOUT
    49. 7.49 (7Bh) STATUS_IOUT
    50. 7.50 (7Ch) STATUS_INPUT
    51. 7.51 (7Dh) STATUS_TEMPERATURE
    52. 7.52 (7Eh) STATUS_CML
    53. 7.53 (7Fh) STATUS_OTHER
    54. 7.54 (80h) STATUS_MFR_SPECIFIC
    55. 7.55 (88h) READ_VIN
    56. 7.56 (8Bh) READ_VOUT
    57. 7.57 (8Ch) READ_IOUT
    58. 7.58 (8Dh) READ_TEMPERATURE_1
    59. 7.59 (98h) PMBUS_REVISION
    60. 7.60 (99h) MFR_ID
    61. 7.61 (9Ah) MFR_MODEL
    62. 7.62 (9Bh) MFR_REVISION
    63. 7.63 (ADh) IC_DEVICE_ID
    64. 7.64 (AEh) IC_DEVICE_REV
    65. 7.65 (D1h) SYS_CFG_USER1
    66. 7.66 (D2h) PMBUS_ADDR
    67. 7.67 (D4h) COMP
    68. 7.68 (D5h) VBOOT_OFFSET_1
    69. 7.69 (D6h) STACK_CONFIG
    70. 7.70 (D8h) PIN_DETECT_OVERRIDE
    71. 7.71 (D9h) NVM_CHECKSUM
    72. 7.72 (DAh) READ_TELEMETRY
    73. 7.73 (79h) STATUS_ALL
    74. 7.74 (DDh) EXT_WRITE_PROTECTION
    75. 7.75 (A4h) IMON_CAL
    76. 7.76 (FCh) FUSION_ID0
    77. 7.77 (FDh) FUSION_ID1
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Input Capacitor Selection
        2. 8.2.3.2 Inductor Selection
        3. 8.2.3.3 Output Capacitor Selection
        4. 8.2.3.4 Compensation Selection
        5. 8.2.3.5 VCC and VRDV Bypass Capacitors
        6. 8.2.3.6 BOOT Capacitor Selection
        7. 8.2.3.7 VOSNS and GOSNS Capacitor Selection
        8. 8.2.3.8 PMBus Address Resistor Selection
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Thermal Performance on TPS546E25EVM
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.18 (25h) VOUT_MARGIN_HIGH

CMD Address25h
Write Transaction:Write Word
Read Transaction:Read Word
Format:ULINEAR16, relative, per VOUT_MODE
Phased:No
NVM Back-up:EEPROM
Updates:On-the-fly

The VOUT_MARGIN_HIGH command loads the unit with the voltage to which the output is to be changed when the OPERATION command is set to “Margin High”. Since the Vout format is set to relative in the (20h) VOUT_MODE register – bit [7], the commanded Vout will increase by the multiplicative factor indicated in this command. This command also uses the LSB specified by (20h) VOUT_MODE. Output voltage transitions during margin operation occur at the slew rate defined by VOUT_TRANSITION_RATE.

When the MARGIN bits in the OPERATION command indicate “Margin High,” the output voltage is updated to the value of VOUT_MARGIN_HIGH + VOUT_TRIM.

Return to Supported PMBus Commands.

Figure 7-25 (25h) VOUT_MARGIN_HIGH Register Map
15141312111098
RWWWWRWRWRW
VOUT_MARGIN_HIGH (High Byte)
76543210
RWRWRWRWRWRWRWRW
VOUT_MARGIN_HIGH (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
Table 7-12 Register Field Descriptions
BitFieldAccessResetDescription
15:11 Reserved R 0b
10:0VOUT_ MARGIN_HIGHRWNVMMargin High output voltage. ULINEAR16 relative per the setting of VOUT_ MODE

To optimize the number of EEPROM bits needed for this command, the bits in the above register do not have direct backup, but instead are correlated to an NVM backed bit called MRGN_HI_DFLT, that is used as below during EEPROM restore:

MARGIN_HI_DFLT VOUT_MARGIN_HIGH[10:0] % Margin
0b 528d 3.125
1b 536d 4.6875

The effect of this command is determined by the settings of the VOUT_MODE command. The table below also shows how the MRGN_HI_DFLT is determined for NVM storage.

VOUT_MARGIN_HIGH[10:0] % Margin MRGN_HI_DFLT
Greater than or equal to (decimal) Less than (decimal)
524 1.5625 0
524 532 3.125
532 540 4.6875 1
540 548 6.25
548 556 7.8125
556 564 9.375
564 572 10.9375
572 2048 12.5

The minimum and maximum valid data values for VOUT_MARGIN_HIGH follow the description in VOUT_COMMAND. That is, the total combined output voltage, including VOUT_MARGIN_HIGH and VOUT_TRIM, follow the values allowed by the current VOUT_MAX setting.

Attempts to write (25h) VOUT_MARGIN_HIGH to any value outside those specified as valid will be considered invalid/unsupported data and cause the device to respond by flagging the appropriate status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.