SLUSC70D March   2016  – July 2017 TPS548D22

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Application
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 40-A FET
      2. 7.3.2 On-Resistance
      3. 7.3.3 Package Size, Efficiency and Thermal Performance
      4. 7.3.4 Soft-Start Operation
      5. 7.3.5 VDD Supply Undervoltage Lockout (UVLO) Protection
      6. 7.3.6 EN_UVLO Pin Functionality
      7. 7.3.7 Fault Protections
        1. 7.3.7.1 Current Limit (ILIM) Functionality
        2. 7.3.7.2 VDD Undervoltage Lockout (UVLO)
        3. 7.3.7.3 Overvoltage Protection (OVP) and Undervoltage Protection (UVP)
        4. 7.3.7.4 Out-of-Bounds Operation
        5. 7.3.7.5 Overtemperature Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 DCAP3 Control Topology
      2. 7.4.2 DCAP Control Topology
    5. 7.5 Programming
      1. 7.5.1 Programmable Pin-Strap Settings
        1. 7.5.1.1 Frequency Selection (FSEL) Pin
        2. 7.5.1.2 VSEL Pin
        3. 7.5.1.3 DCAP3 Control and Mode Selection
          1. 7.5.1.3.1 Application Workaround to Support 4-ms and 8-ms SS Settings
      2. 7.5.2 Programmable Analog Configurations
        1. 7.5.2.1 RSP/RSN Remote Sensing Functionality
          1. 7.5.2.1.1 Output Differential Remote Sensing Amplifier
        2. 7.5.2.2 Power Good (PGOOD Pin) Functionality
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 TPS548D22 1.5-V to 16-V Input, 1-V Output, 40-A Converter
      2. 8.2.2 Design Requirements
      3. 8.2.3 Design Procedure
        1. 8.2.3.1  Switching Frequency Selection
        2. 8.2.3.2  Inductor Selection
        3. 8.2.3.3  Output Capacitor Selection
          1. 8.2.3.3.1 Minimum Output Capacitance to Ensure Stability
          2. 8.2.3.3.2 Response to a Load Transient
          3. 8.2.3.3.3 Output Voltage Ripple
        4. 8.2.3.4  Input Capacitor Selection
        5. 8.2.3.5  Bootstrap Capacitor Selection
        6. 8.2.3.6  BP Pin
        7. 8.2.3.7  R-C Snubber and VIN Pin High-Frequency Bypass
        8. 8.2.3.8  Optimize Reference Voltage (VSEL)
        9. 8.2.3.9  MODE Pin Selection
        10. 8.2.3.10 Overcurrent Limit Design.
      4. 8.2.4 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Mounting and Thermal Profile Recommendation
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Out-of-Bounds Operation

The device has an out-of-bounds (OOB) overvoltage protection that protects the output load at a much lower overvoltage threshold of 8% above the target voltage. OOB protection does not trigger an overvoltage fault, so the device is not latched off after an OOB event. OOB protection operates as an early no-fault overvoltage-protection mechanism. During the OOB operation, the controller operates in forced PWM mode only by turning on the low-side FET. Turning on the low-side FET beyond the zero inductor current quickly discharges the output capacitor thus causing the output voltage to fall quickly toward the setpoint. During the operation, the cycle-by-cycle negative current limit is also activated to ensure the safe operation of the internal FETs.