SLVSD46A November 2017 – December 2021 TPS55160-Q1 , TPS55162-Q1 , TPS55165-Q1
PRODUCTION DATA
The internal power MOSFETs are protected against excess power dissipation with junction overtemperature protection. In case of a detected overtemperature condition, the TPS55165-Q1 device goes to the PRE_RAMP state (the buck-boost regulator is switched off and the VREG supply is enabled) and a 12-ms time-out is started when the overtemperature condition is cleared. The device restarts in the PRE_RAMP state after this 12-ms time-out expires, the overtemperature condition disappeared, and the IGN pin is high.
When the device operates in low-power mode, this overtemperature protection function is disabled.