SLVSBD4E May 2012 – September 2021 TPS55340
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
VIN | Input voltage range | 2.9 | 32 | V | ||
IQ | Operating quiescent current into VIN | Device nonswitching, VFB = 2 V | 0.5 | mA | ||
ISD | Shutdown current | EN = GND | 2.7 | 10 | µA | |
VUVLO | Undervoltage lockout threshold | VIN falling | 2.5 | 2.7 | V | |
Vhys | Undervoltage lockout hysteresis | 120 | 140 | 160 | mV | |
ENABLE AND REFERENCE CONTROL | ||||||
VEN | EN threshold voltage | EN rising input | 0.9 | 1.08 | 1.30 | V |
VEN | EN threshold voltage | EN falling input | 0.74 | 0.92 | 1.125 | V |
VENh | EN threshold hysteresis | 0.16 | V | |||
REN | EN pulldown resistor | 400 | 950 | 1600 | kΩ | |
Toff | Shutdown delay, SS discharge | EN high to low | 1.0 | ms | ||
VSYNh | SYN logic high voltage | 1.2 | V | |||
VSYNl | SYN logic low voltage | 0.4 | V | |||
VOLTAGE AND CURRENT CONTROL | ||||||
VREF | Voltage feedback regulation voltage | 1.204 | 1.229 | 1.254 | V | |
TA = 25°C | 1.220 | 1.229 | 1.238 | |||
IFB | Voltage feedback input bias current | TA = 25°C | 1.6 | 20 | nA | |
Isink | COMP pin sink current | VFB = VREF + 200 mV, VCOMP = 1 V | 42 | µA | ||
Isource | COMP pin source current | VFB = VREF – 200 mV, VCOMP = 1 V | 42 | µA | ||
VCCLP | COMP pin clamp voltage | High Clamp, VFB = 1 V | 3.1 | V | ||
Low Clamp, VFB = 1.5 V | 0.75 | |||||
VCTH | COMP pin threshold | Duty cycle = 0% | 1.04 | V | ||
Gea | Error amplifier transconductance | 240 | 360 | 440 | µS | |
Rea | Error amplifier output resistance | 10 | MΩ | |||
fea | Error amplifier crossover frequency | 500 | kHz | |||
FREQUENCY | ||||||
fSW | Frequency | RFREQ = 480 kΩ | 75 | 94 | 130 | kHz |
RFREQ = 80 kΩ | 460 | 577 | 740 | |||
RFREQ = 40 kΩ | 920 | 1140 | 1480 | |||
Dmax | Maximum duty cycle | VFB = 1.0 V, RFREQ = 80 kΩ | 89% | 96% | ||
VFREQ | FREQ pin voltage | 1.25 | V | |||
Tmin_on | Minimum on pulse width | RFREQ = 80 kΩ | 77 | ns | ||
POWER SWITCH | ||||||
RDS(ON) | N-channel MOSFET on-resistance | VIN = 5 V | 60 | 110 | mΩ | |
VIN = 3 V | 70 | 120 | ||||
ILN_NFET | N-channel leakage current | VDS = 25 V, TA = 25°C | 2.1 | µA | ||
OCP and SS | ||||||
ILIM | N-channel MOSFET current limit | D = Dmax | 5.25 | 6.6 | 7.75 | A |
ISS | Soft-start bias current | VSS = 0 V | 6 | µA | ||
THERMAL SHUTDOWN | ||||||
Tshutdown | Thermal shutdown threshold | 165 | °C | |||
Thysteresis | Thermal shutdown threshold hysteresis | 15 | °C |