SLVSE22B September 2017 – June 2018 TPS560430
UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more EMI is generated. High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing ceramic bypass capacitor(s) as close as possible to the VIN and GND pins is the key to EMI reduction.
The SW pin connecting to the inductor should be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) should be used for high current conduction path to minimize parasitic resistance. The output capacitors should be placed close to the VOUT end of the inductor and closely grounded to GND pin.