SLUSEE2 October   2020 TPS562207S

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adaptive On-Time Control and PWM Operation
      2. 8.3.2 Soft Start and Pre-Biased Soft Start
      3. 8.3.3 Current Protection
      4. 8.3.4 Undervoltage Lockout (UVLO) Protection
      5. 8.3.5 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Standby Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Resistors Selection
        2. 9.2.2.2 Output Filter Selection
        3. 9.2.2.3 Input Capacitor Selection
        4. 9.2.2.4 Bootstrap Capacitor Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1)TPS562207SUNIT
DRL
6 PINS
RθJAJunction-to-ambient thermal resistance141.0°C/W
RθJA_effectiveJunction-to-ambient thermal resistance with TI EVM board(2)75°C/W
RθJC(top)Junction-to-case (top) thermal resistance42.0°C/W
RθJBJunction-to-board thermal resistance25.5°C/W
ψJTJunction-to-top characterization parameter1.0°C/W
ψJBJunction-to-board characterization parameter25.3°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) This RθJA_effective is tested on TI EVM board(2 layer, copper thickness is 2 OZ) at VIN = 12V, VOUT = 5V, IOUT = 2A , TA = 25oC.