SLVSDT2 November 2016 TPS562219A , TPS563219A
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage range | VIN, EN | –0.3 | 19 | V |
VBST | –0.3 | 25 | V | |
VBST (10 ns transient) | –0.3 | 27.5 | V | |
VBST (vs SW) | –0.3 | 6.5 | V | |
VFB, PG | –0.3 | 6.5 | V | |
SS | –0.3 | 5.5 | V | |
SW | –2 | 19 | V | |
SW (10 ns transient) | –3.5 | 21 | V | |
Operating junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VIN | Supply input voltage range | 4.5 | 17 | V | |
VI | Input voltage range | VBST | –0.1 | 23 | V |
VBST (10 ns transient) | –0.1 | 26 | |||
VBST(vs SW) | –0.1 | 6 | |||
EN | –0.1 | 17 | |||
VFB, PG | –0.1 | 5.5 | |||
SS | –0.1 | 5 | |||
SW | –1.8 | 17 | |||
SW (10 ns transient) | –3.5 | 20 | |||
TA | Operating free-air temperature | –40 | 85 | °C |
THERMAL METRIC(1) | TPS562219A | TPS563219A | UNIT | |
---|---|---|---|---|
DDF (SOT) | ||||
8 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 106.1 | 87.0 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 49.1 | 41.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 10.9 | 14.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 8.6 | 4.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 10.8 | 14.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IVIN | Operating – non-switching supply current | VIN current, TA = 25°C, EN = 5 V, VFB = 0.8 V | 650 | 900 | µA | |
IVINSDN | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 3 | 10 | µA | |
LOGIC THRESHOLD | ||||||
VENH | EN high-level input voltage | EN | 1.6 | V | ||
VENL | EN low-level input voltage | EN | 0.6 | V | ||
REN | EN pin resistance to GND | VEN = 12 V | 225 | 450 | 900 | kΩ |
VFB VOLTAGE AND DISCHARGE RESISTANCE | ||||||
VFBTH | VFB threshold voltage | TA = 25°C, VO = 1.05 V | 757 | 765 | 773 | mV |
TA = 0°C to 85°C, VO = 1.05 V(1) | 753 | 777 | ||||
TA = -40°C to 85°C, VO = 1.05 V(1) | 751 | 779 | ||||
IVFB | VFB input current | VFB = 0.8V, TA = 25°C | 0 | ±0.1 | µA | |
MOSFET | ||||||
RDS(on)h | High side switch resistance | TA = 25°C, VBST – SW = 5.5 V, TPS562219A | 133 | mΩ | ||
TA = 25°C, VBST – SW = 5.5 V, TPS563219A | 68 | |||||
RDS(on)l | Low side switch resistance | TA = 25°C, TPS562219A | 80 | mΩ | ||
TA = 25°C, TPS563219A | 39 | |||||
CURRENT LIMIT | ||||||
IOCL | Current limit(1) | DC current, VOUT = 1.05 V, L1 = 2.2 µH, TPS562219A | 2.5 | 3.2 | 4.3 | A |
DC current, VOUT = 1.05 V, L1 = 1.5 µH, TPS563219A | 3.5 | 4.2 | 5.3 | |||
THERMAL SHUTDOWN | ||||||
TSDN | Thermal shutdown threshold(1) | Shutdown temperature | 155 | °C | ||
Hysteresis | 35 | |||||
SOFT START | ||||||
ISS | SS charge current | VSS = 1.2 V | 4.2 | 6 | 7.8 | µA |
POWER GOOD | ||||||
VTHPG | PG threshold | VFB rising (Good) | 85% | 90% | 95% | |
VFB falling (Fault) | 85% | |||||
IPG | PG sink current | PG = 0.5 V | 0.5 | 1 | mA | |
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | ||||||
VOVP | Output OVP threshold | OVP Detect | 125%xVfbth | |||
VUVP | Output UVP threshold | Hiccup detect | 65%xVfbth | |||
tHiccupOn | Hiccup Power On Time | 1 | cycle | |||
tHiccupOff | Hiccup Power Off Time | 7 | ||||
UVLO | ||||||
UVLO | UVLO threshold | Wake up VIN voltage | 3.45 | 3.75 | 4.05 | V |
Hysteresis VIN voltage | 0.13 | 0.32 | 0.55 |
MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|
ON-TIME TIMER CONTROL | ||||||
tON | On time | VIN = 12 V, VO = 1.05 V | 150 | ns | ||
tOFF(MIN) | Minimum off time | TA = 25°C, VFB = 0.5 V | 260 | 310 | ns |
VIN = 12V (unless otherwise noted)