SLUSDX1A September   2020  – August 2021 TPS563211

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Advanced Emulated Current Mode Control
      2. 7.3.2 Mode Selection and PG/SS Pin Function Configuration
      3. 7.3.3 Power Good (PG)
      4. 7.3.4 Soft Start and Pre-Biased Soft Start
      5. 7.3.5 Output Discharge through PG/SS Pin
      6. 7.3.6 Precise Enable and Adjusting Undervoltage Lockout
      7. 7.3.7 Overcurrent Limit and Undervoltage Protection
      8. 7.3.8 Overvoltage Protection
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Active Mode
      3. 7.4.3 CCM Operation
      4. 7.4.4 FCCM Operation
      5. 7.4.5 DCM Operation and Eco-Mode Operation
      6. 7.4.6 On-Time Extension for Large Duty Cycle Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Output Voltage Resistors Selection
        3. 8.2.2.3 Output Inductor Selection
        4. 8.2.2.4 Output Capacitor Selection
        5. 8.2.2.5 Input Capacitor Selection
        6. 8.2.2.6 Bootstrap Capacitor Selection
        7. 8.2.2.7 Undervoltage Lockout Set Point
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Custom Design With WEBENCH® Tools
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Limits apply over the recommended operating junction temperature (TJ ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 4.2 V to 18 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Operation input voltage 4.2 18 V
IQ(VIN) VIN quiescent current at power save mode Nonswitching, VEN = 1.2 V, VFB = 0.65 V, IOUT = 0 mA 120 µA
VIN quiescent current at FCCM Nonswitching, VEN = 1.2 V, VFB = 0.65 V, IOUT = 0 mA 450 µA
ISD(VIN) VIN shutdown supply current VIN = 12 V, VEN = 0 V 3 10 µA
UVLO
VUVLO(R) VIN UVLO rising threshold VIN rising  3.8 4 4.2 V
VUVLO(F) VIN UVLO falling threshold VIN falling 3.4 3.6 3.8 V
ENABLE
VEN(R) EN voltage rising threshold EN rising, enable switching 1.05 1.15 1.25 V
VEN(F) EN voltage falling threshold EN falling, disable switching 0.91 1.01 1.10 V
IEN(P1) EN pin sourcing current pre EN rising threshold VEN = 1.0 V 0.93 1.2 1.5 µA
IEN(H) EN pin sourcing current hysteresis 2.4 3.1 3.81 µA
REFERENCE VOLTAGE
VFB FB voltage TJ = 25°C 0.594 0.6 0.606 V
TJ = –40°C to 125°C, VIN = 12 V 0.591 0.6 0.609 V
IFB(LKG) FB input leakage current VFB = 0.65 V, TJ = 25°C –0.1 0 0.1 µA
STARTUP
ISS Soft-start charge current VSS = 0 V 4.5 6.6 8.3 µA
tSS Internal fixed soft-start time From 1st switching pulse until target VOUT 1.5 2 2.6 ms
SWITCHING FREQUENCY
fSW(FCCM) Switching frequency, FCCM operation 550 600 650 kHz
POWER STAGE
RDSON(HS) High-side MOSFET on-resistance TJ = 25°C, VIN = 12 V, VBOOT-SW = 5 V 66 mΩ
RDSON(LS) Low-side MOSFET on-resistance TJ = 25°C, VIN = 12 V 33 mΩ
tON(min) (1) Minimum ON pulse width 45 ns
tON(max) Maximum ON pulse width 6 µs
tOFF(min) Minimum OFF pulse width 105 ns
OVERCURRENT PROTECTION
IHS(OC) High-side peak current limit Peak current limit on the HS MOSFET 4.25 5 5.75 A
ILS(OC) Low-side valley current limit Valley current limit on the LS MOSFET, VIN = 12 V 3.0 4 4.9 A
ILS(NOC) Low-side negative current limit for FCCM Sinking current limit on the LS MOSFET, VIN = 12 V 1.1 1.5 2.2 A
tHIC(WAIT) Wait time before entering Hiccup 108 µs
tHIC(RE) Hiccup time before re-start 6 Cycles
OUTPUT OVP AND UVP
VUVP Undervoltage-protection (UVP) threshold voltage VFB falling 62.5%
UVP hysteresis 5%
VOVP Overvoltage-protection (OVP) threshold voltage VFB rising 107% 112.0% 114%
OVP hysteresis 5%
POWER GOOD
VPGTH Power-good threshold FB falling, PG from high to low 82% 87% 92%
FB rising, PG from low to high 87% 92% 97%
FB falling, PG from low to high 101% 107% 112%
FB rising, PG from high to low 107% 112% 114%
VPG(OL) PG pin output low-level voltage IPG = 0.6 mA 0.3 V
IPG(LKG) PG pin leakage current when open drain output is high VPG = 5.5 V –1 1 µA
tPG(R) PG delay going from low to high 112 µs
tPG(F) PG delay going from high to low 48 µs
Minimum VIN for valid output(1) VPG/SS < 0.5 V at 100 μA 2 2.5 V
THERMAL SHUTDOWN
TJ(SD) (1) Thermal shutdown threshold 150 °C
TJ(HYS) (1) Thermal shutdown hysteresis 20 °C
(1) Not production tested