SLVSGM3B March 2023 – January 2024 TPS56836 , TPS56837 , TPS56838
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IQ | Nonswitching Quiescent current(1) | TJ = 25°C, VEN = 5V, VFB = 0.65V, TPS56837 | 45 | µA | ||
TJ = 25°C, VEN = 5V, VFB = 0.7V, TPS56838 | 370 | |||||
ISHDNN | Shutdown supply current | TJ = 25°C, VEN = 0V | 3 | µA | ||
UVLO | ||||||
UVLO | VIN undervoltage lockout | Wake up VIN voltage | 4.0 | 4.2 | 4.4 | V |
Shutdown VIN voltage | 3.5 | 3.65 | 3.8 | V | ||
Hysteresis VIN voltage | 550 | mV | ||||
ENABLE(EN PIN) | ||||||
IEN_PULLUP | EN pullup current | VEN = 1.1V | 1 | µA | ||
IEN_HYS | Hysteresis current | VEN = 1.3V | 3 | µA | ||
VEN_ON | Enable threshold | EN rising | 1.18 | 1.26 | V | |
VEN_OFF | EN falling | 1 | 1.07 | V | ||
FEEDBACK VOLTAGE | ||||||
VFB | Feedback voltage | VOUT = 5V, continuous mode operation, TJ = 25°C | 0.594 | 0.6 | 0.606 | V |
VOUT = 5V, continuous mode operation, TJ = –40°C to 150°C | 0.591 | 0.6 | 0.609 | V | ||
MOSFET | ||||||
Rdson_HS | High-side MOSFET on-resistance | TJ = 25°C, VBST – VSW = 5V | 20.4 | mΩ | ||
Rdson_LS | Low-side MOSFET on-resistance | TJ = 25°C | 9.5 | mΩ | ||
CURRENT LIMIT | ||||||
ILS_OCL | Low-side MOSFET valley current limit | ILIM-1 option | 6 | 7.2 | 8.5 | A |
ILIM option | 8 | 9.6 | 11.1 | |||
IHS_OCL | High-side MOSFET peak current limit | 12.75 | 15 | 17.25 | A | |
INOCL | Low-side MOSFET negative current limit | 2.5 | A | |||
DUTY CYCLE and FREQUENCY CONTROL | ||||||
FSW | Switching frequency | VIN = 24V, VOUT = 5V, continuous mode operation, Mode setting to 500kHz | 500 | kHz | ||
tOOA | OOA period | TPS56836 OOA operation period | 30 | us | ||
tON(MIN) | Minimum on time(2) | 50 | ns | |||
tOFF(MIN) | Minimum off time(2) | TJ = 25°C | 150 | ns | ||
SOFT START | ||||||
tSS | Internal soft-start time | 1.8 | ms | |||
ISS | Soft-start charging current | 6 | uA | |||
POWER GOOD | ||||||
VPGTH | PG lower threshold - falling | % of VFB | 85% | |||
PG lower threshold - rising | % of VFB | 90% | ||||
PG upper threshold - falling | % of VFB | 110% | ||||
PG upper threshold - rising | % of VFB | 115% | ||||
IPGSINK | PG sink current | VFB = 0.5V, VPG = 0.4V | 10 | mA | ||
tPG_DLY | PG delay | PG from low-to-high | 64 | us | ||
PG from high-to-low | 32 | us | ||||
VOVP | Output OVP threshold | OVP detect | 125% | |||
tOVP_DEG | OVP propagation deglitch | TJ = 25°C | 32 | us | ||
VUVP | Output UVP threshold | Hiccup detect | 65% | |||
tUVP_WAIT | UV protection hiccup wait time | 256 | us | |||
tUVP_HICCUP | UV protection hiccup time before recovery | 10.5 × tSS | s | |||
THERMAL SHUTDOWN | ||||||
Thermal shutdown threshold(3) | Temperature Rising | 150 | 165 | °C | ||
Hysteresis | 30 | °C | ||||
SW DISCHARGE RESISTANCE | ||||||
VOUT discharge resistance | VEN = 0, VSW = 0.5V, TJ = 25°C | 200 | Ω |