SLVSE63B September   2017  – February 2019 TPS61085A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft Start
      2. 7.3.2 Frequency Select Pin (FREQ)
      3. 7.3.3 Undervoltage Lockout (UVLO)
      4. 7.3.4 Thermal Shutdown
      5. 7.3.5 Overvoltage Prevention
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Rectifier Diode Selection
        3. 8.2.2.3 Setting the Output Voltage
        4. 8.2.2.4 Compensation (COMP)
        5. 8.2.2.5 Input Capacitor Selection
        6. 8.2.2.6 Output Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

VIN = 3.3 V, EN = IN, VS = 12 V, TA = –40°C to +105°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage 2.3 6 V
IQ Operating quiescent current into IN Device not switching, VFB = 1.3 V 70 100 µA
ISDVIN Shutdown current into IN EN = GND 1 µA
UVLO Undervoltage lockout threshold VIN falling 2.2 V
VIN rising 2.3
TSD Thermal shutdown Temperature rising, TJ 150 °C
TSD(HYS) Thermal shutdown hysteresis 14 °C
LOGIC SIGNALS EN, FREQ
VIH High level input voltage VIN = 2.3 V to 6 V 2 V
VIL Low level input voltage VIN = 2.3 V to 6 V 0.5 V
Ilkg Input leakage current EN = FREQ = GND 0.1 µA
BOOST CONVERTER
VS Boost output voltage VIN + 0.5 18.5 V
VFB Feedback regulation voltage 1.230 1.238 1.246 V
gm Transconductance error amplifier 107 µA/V
IFB Feedback input bias current VFB = 1.238 V 0.1 µA
RDS(on) N-channel MOSFET ON-resistance VIN = VGS = 5 V, ISW = current limit 0.13 0.2 Ω
VIN = VGS = 3.3 V, ISW = current limit 0.15 0.24
Ilkg SW leakage current EN = GND, VSW = 6 V 2 µA
ILIM N-channel MOSFET current limit 2 2.6 3.2 A
ISS Soft-start current VSS = 1.238 V 7 10 13 µA
fosc Oscillator frequency FREQ = high 0.9 1.2 1.5 MHz
FREQ = low 480 650 820 kHz
Line regulation VIN = 2.3 V to 6 V, IOUT = 10 mA 0.0002 %/V
Load regulation VIN = 3.3 V, IOUT = 1 mA to 400 mA 0.11 %/A