SLVS806D April 2009 – December 2015 TPS61240 , TPS61241
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VI | Input voltage on VIN, L, EN | –0.3 | 7 | V |
Voltage on VOUT | –2.0 | 7 | V | |
Voltage on FB | –2.0 | 14 | V | |
Peak output current | Internally limited | A | ||
TJ | Maximum operating junction temperature | –40 | 125 | °C |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge(2) | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
Machine model (MM) | ±200 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIN | Input voltage range | 2.3 | 5.5 | V | ||
L | Inductance | 0.4 | 1 | 1.5 | µH | |
CO | Output capacitance | TPS61240 TPS61241 |
1 | 20 | µF | |
TPS61242 | 0.8 | 10 | µF | |||
TA | Operating ambient temperature | –40 | 85 | °C | ||
TJ | Operating junction temperature | –40 | 125 |
THERMAL METRIC(1) | TPS6124x | UNIT | ||
---|---|---|---|---|
YFF | DRV | |||
6 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 132.7 | 104.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 1.2 | 97.1 | |
RθJB | Junction-to-board thermal resistance | 22.4 | 74.0 | |
ψJT | Junction-to-top characterization parameter | 5.2 | 4.5 | |
ψJB | Junction-to-board characterization parameter | 22.4 | 74.4 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 48.4 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
DC-DC STAGE | ||||||
VIN | Input voltage range | 2.3 | 5.5 | V | ||
VOUT | Fixed output voltage range | 2.3 V ≤ VIN ≤ 5.5 V, 0 mA ≤ IOUT ≤ 200 mA | 4.9 | 5.0 | 5.1 | V |
VO_Ripple | Ripple voltage, PWM mode | ILOAD = 150 mA | 20 | mVpp | ||
ISW | Output current | VIN 2.3 V to 5.5 V | 200 | mA | ||
Switch valley current limit | VOUT = VGS = 5.0 V (TPS61240) | 500 | 600 | mA | ||
VOUT = VGS = 5.0 V (TPS61241, TPS61242) | 600 | 700 | ||||
Short circuit current | VOUT = VGS = 5.0 V | 200 | 350 | mApk | ||
High side MOSFET on-resistance(1) | VIN = VGS = 5.0 V, TA = 25°C(1) | 290 | mΩ | |||
Low Side MOSFET on-resistance(1) | VIN = VGS = 5.0 V, TA = 25°C (1) | 250 | mΩ | |||
Operating quiescent current | IOUT = 0 mA, Power save mode | 30 | 40 | μA | ||
Shutdown current | EN = GND | 1.5 | μA | |||
Reverse leakage current VOUT | EN = 0, VOUT = 5 V | 2.5 | μA | |||
Leakage current from battery to VOUT | EN = GND | 2.5 | μA | |||
Line transient response | VIN 600 mVp-p AC square wave, 200 Hz, 12.5% DC at 50/200 mA load |
±25 | ±50 | mVpk | ||
Load transient response | 0–50 mA, 50–0 mA VIN = 3.6V TRise = TFall = 0.1 μs | 50 | mVpk | |||
50–200 mA, 200–50 mA, VIN = 3.6 V, TRise = TFall = 0.1 μs | 150 | |||||
IIN | Input bias current, EN | EN = GND or VIN | 0.01 | 1.0 | μA | |
VUVLO | Undervoltage lockout threshold | Falling | 2.0 | 2.1 | V | |
Rising | 2.1 | 2.2 | V | |||
CONTROL STAGE | ||||||
VIH | High level input voltage threshold, EN | 2.3 V ≤ VIN ≤ 5.5 V | 1.0 | V | ||
VIL | Low level input voltage threshold, EN | 2.3 V ≤ VIN ≤ 5.5 V | 0.4 | V | ||
OVC | Input overvoltage threshold | Falling | 5.9 | V | ||
Rising | 6.0 | |||||
tStart | Start-up time | Time from active EN to start switching, no-load until VOUT is stable 5 V | 300 | μs | ||
DC-DC STAGE | ||||||
ƒ | See Figure 7 (Frequency Dependancy vs IOUT) | 3.5 | MHz | |||
TSD | Thermal shutdown | Increasing junction temperature | 140 | °C | ||
Thermal shutdown hysteresis | Decreasing junction temperature | 20 | °C |
Figure | ||
---|---|---|
Maximum Output Current | vs Input Voltage | Figure 1 |
Efficiency | vs Output Current, Vout = 5V, Vin = [2.3 V; 3.0 V; 3.6 V; 4.2 V] | Figure 2 |
vs Input Voltage, Vout = 5 V, Iout = [100 µA; 1 mA; 10 mA; 100 mA; 200 mA] | Figure 3 | |
Input Current | at No Output Load, Device Disabled | Figure 4 |
Output Voltage | vs Output Current, Vout = 5 V, Vin = [2.3 V; 3.0 V; 3.6 V; 4.2 V] | Figure 5 |
vs Input Voltage | Figure 6 | |
Frequency | vs Output Load, Vout = 5 V, Vin = [3.0 V; 4.0 V; 5.0 V] | Figure 7 |