SLVSEA0B january 2018 – june 2023 TPS61280D , TPS61280E , TPS61281D
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||||
IQ | Operating quiescent current into VIN | TPS6128xD/E | DC/DC boost mode. Device not switching IOUT = 0 mA, VIN = 3.2 V, VOUT = 3.4 V | –40°C ≤ TJ ≤ 85°C | 47.4 | 65.6 | µA | ||
Pass-through mode (auto) EN = 1.8 V, BYP = 1.8 V, VIN = 3.6 V | 27.4 | 42.6 | µA | ||||||
Pass-through mode (forced) EN = 1.8 V, BYP = AGND, VOUT = 3.6 V | 15.4 | 25.6 | µA | ||||||
Operating quiescent current into VOUT | DC/DC boost mode. Device not switching IOUT = 0 mA, VIN = 3.2 V, VOUT = 3.4 V | 8.9 | 19.6 | µA | |||||
ISD | Shutdown current | TPS6128xD/E | EN = 0 V, BYP = 0 V, VIN = 3.6 V | 3 | 6.6 | μA | |||
EN = 0 V, BYP = 1.8 V, VIN = 3.6 V | 8.9 | 20.6 | μA | ||||||
VUVLO | Under-voltage lockout threshold | TPS6128xD/E | Falling | 2 | 2.1 | V | |||
Hysteresis | 0.1 | V | |||||||
EN, VSEL, nBYP, MODE, SDA, SCL, GPIO, PG | |||||||||
VIL | Low-level input voltage | TPS6128xD | 0.4 | V | |||||
VIH | High-level input voltage | 1.2 | V | ||||||
VIL | Low-level input voltage | TPS61280E | 0.36 | V | |||||
VIH | High-level input voltage | 0.84 | V | ||||||
VOL | Low-level output voltage (SDA) | TPS61280D | IOL = 8 mA | 0.3 | V | ||||
Low-level output voltage (GPIO) | IOL = 8 mA, GPIOCFG = 0 | 0.3 | V | ||||||
Low-level output voltage (PG) | TPS6128xD/E | IOL = 8 mA | 0.3 | V | |||||
RPD | EN, VSEL,
BYP, pull-down resistance | TPS6128xD/E | Input ≤ 0.4 V | 300 | kΩ | ||||
CIN | EN, VSEL,
BYP, MODE, PG input capacitance | TPS6128xD/E | Input connected to AGND or VIN | 9 | pF | ||||
SDA, SCL, GPIO input capacitance | TPS61280D | 9 | pF | ||||||
VTHPG | Power good threshold | TPS6128xD/E | Rising VOUT | 0.95 x VOUT | |||||
Falling VOUT | 0.9 x VOUT | ||||||||
Ilkg | Input leakage current | TPS6128xD/E | Input connected to AGND | –40°C ≤ TJ ≤ 85°C | 0 | µA | |||
Input connected VIN | 0.5 | µA | |||||||
OUTPUT | |||||||||
VOUT(TH) | Threshold DC voltage accuracy | TPS6128xD/E | No load. Open loop | -1.5% | 1.5% | ||||
VOUT | Regulated DC voltage accuracy | TPS6128xD/E | 2.65 V ≤ VIN ≤ VOUT_TH - 150 mV IOUT = 0mA PWM operation. | -2% | 2% | ||||
2.65 V ≤ VIN ≤ VOUT_TH - 150 mV IOUT = 0 mA PFM/PWM operation | -2% | 4% | |||||||
ΔVOUT | Power-save mode output ripple voltage | TPS6128xD/E | PFM operation, IOUT = 1 mA | 30 | mVpk | ||||
PWM mode output ripple voltage | PWM operation, IOUT = 500 mA | 15 | mVpk | ||||||
POWER SWITCH | |||||||||
rDS(on) | Low-side switch MOSFET on resistance | TPS6128xD/E | VIN = 3.2 V, VOUT = 3.5 V | 45 | 80 | mΩ | |||
High-side rectifier MOSFET on resistance | VIN = 3.2 V, VOUT = 3.5 V | 40 | 70 | mΩ | |||||
High-side pass-through MOSFET on resistance | VIN = 3.2 V | 35 | 60 | mΩ | |||||
Ilkg | Reverse leakage current into SW | TPS6128xD/E | EN = AGND, VIN = VOUT = SW = 3.5 V –40°C ≤ TJ ≤ 85°C | 0.1 | 2 | µA | |||
Reverse leakage current into VOUT | EN =
BYP = VIN, VIN = 2.9 V, VOUT = 4.4 V, VSW = 0 V device not switching –40°C ≤ TJ ≤ 85°C | 0.11 | 2 | µA | |||||
ISINK | VOUT sink capability | TPS6128xD/E | EN = AGND, VOUT ≤ 3.6 V,IOUT = -10 mA | 0.3 | V | ||||
Valley inductor current limit | TPS61280D TPS61281D | VIN = 2.9 V, VOUT = 3.5 V, –40°C ≤ TJ ≤ 125°C, auto PFM/PWM | 2475 | 3000 | 3525 | mA | |||
Valley inductor current limit | TPS61282D | VIN = 2.9 V, VOUT = 3.5 V, –40°C ≤ TJ ≤ 125°C, auto PFM/PWM | 3300 | 4000 | 4700 | mA | |||
Valley inductor current limit | TPS61280E | VIN = 2.9 V, VOUT = 3.4 V, –40°C ≤ TJ ≤ 125°C, auto PFM/PWM | 4300 | 5000 | 6200 | mA | |||
Pass through mode current limit | TPS6128xD/E | EN = BYP = GND, VIN = 3.2 V | 5000 | mA | |||||
EN = VIN, BYP = don't care , VIN = 3.2 V | 5600 | 7400 | 9100 | mA | |||||
Pre-charge mode current limit (linear mode, phase 1) | TPS6128xD/E | VIN - VOUT >= 300 mV | 500 | 650 | mA | ||||
Pre-charge mode current limit (linear mode, phase 2) | 2000 | mA | |||||||
OSCILLATOR | |||||||||
fOSC | Oscillator frequency | TPS6128xD/E | VIN = 2.7 V, VOUT = 3.5 V | 2.3 | MHz | ||||
THERMAL SHUTDOWN, HOT DIE DETECTOR | |||||||||
Thermal shutdown(1) | TPS6128xD/E | 140 | 160 | °C | |||||
Hot die detector accuracy(1) | TPS61280D | -10 | 105 | 10 | °C | ||||
TIMING | |||||||||
Start-up time | TPS6128xD/E | VIN = 3.2 V, VOUT_TH = 01011 (3.4 V), RLOAD = 50 Ω Time from active VIN to VOUT settled | 500 | µs | |||||
GPIO rise time(1) | TPS61280D | 200 | ns |