SLVSBX9A September 2014 – September 2014 TPS61291
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Pin Voltage Range (2) | VIN | -0.3 | 5.5 | V |
SW | -0.3 | 7 | ||
EN/BYP, VOUT | -0.3 | 5.5 | ||
VSEL | -0.3 | VOUT + 0.3V | ||
Output Current | In Bypass Operation (EN/BYP = GND) | 250 | mA | |
TJ | Maximum Junction Temperature | -40 | 150 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | –65 | 150 | °C | |
V(ESD) | Electrostatic discharge | Human body model (HBM) per ANSI/ESDA/JEDEC JS-001, all pins(1) | -2 | 2 | kV |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | -0.5 | 0.5 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Supply voltage for startup | 1.5 | V | ||
Supply voltage range (once device has started) | 0.9 | 5 | |||
Supply voltage range for step up conversion (once device has started) | 0.9 | VOUT | |||
TA | Operating ambient temperature | -40 | 85 | °C | |
TJ | Operating junction temperature | –40 | 125 |
THERMAL METRIC(1) | TPS61291 | UNIT | |
---|---|---|---|
DRV (2x2 SON) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 71.2 | °C/W |
RθJCtop | Junction-to-case (top) thermal resistance | 93.5 | |
RθJB | Junction-to-board thermal resistance | 46.7 | |
ψJT | Junction-to-top characterization parameter | 2.5 | |
ψJB | Junction-to-board characterization parameter | 41.1 | |
RθJCbot | Junction-to-case (bottom) thermal resistance | 11.1 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY | |||||||
VIN | Startup voltage | VOUT = 3.3V, IOUT = 20mA | 1.5 | V | |||
Input voltage range | Operating voltage range | 0.9 | 5 | ||||
IQ | Quiescent current in boost mode | VIN | IOUT = 0 mA, VEN/BYP = VIN = 1.8 V, VOUT = 3.3V, device not switching | 0.4 | 1.5 | μA | |
VOUT | 5.7 | 9 | |||||
Quiescent current in bypass mode | VIN | VEN/BYP = low, VIN = 3 V, IOUT = 0 mA | 0.015 | 0.5 | |||
ILkSW | Leakage current into SW | VEN/BYP = low, VIN = 1.2 V, VSW = 1.2 V | 0.01 | 0.5 | μA | ||
VUVLO | Undervoltage lockout threshold | VIN decreasing | 0.65 | 0.9 | V | ||
Overtemperature protection | TJ rising | 140 | °C | ||||
Overtemperature hysteresis | 20 | °C | |||||
INPUTS | |||||||
IIN | EN/BYP, input current | EN/BYP = low or EN/BYP = VIN | 0.01 | 0.1 | μA | ||
VIL | EN/BYP, input low voltage | VIN ≤ 1.5 V | 0.2 × VIN | V | |||
5 V > VIN > 1.5 V | 0.3 | ||||||
VIH | EN/BYP, input high voltage | VIN ≤ 1.5 V | 0.8 × VIN | V | |||
5 V > VIN > 1.5 V | 1.2 | ||||||
VIL | VSEL, input low voltage | VEN/BYP = high | 0.3 | V | |||
VIH | VSEL, input high voltage | VEN/BYP = high | VOUT - 0.3 | V | |||
IIN | VSEL, input current | VEN/BYP = high, VSEL = VOUT = 3V | 0.01 | 0.1 | μA | ||
POWER SWITCHES | |||||||
RDS(ON) | Rectifying switch on resistance | VOUT = 3.3 V | 0.6 | Ω | |||
Main switch on resistance | VOUT = 3.3 V | 0.4 | Ω | ||||
Bypass switch on resistance | VIN = 1.8V, IOUT = 50 mA, EN/BYP = low | 1.2 | Ω | ||||
ISW | Switch current limit | VOUT = 3.3V | 700 | 1000 | 1300 | mA | |
OUTPUT | |||||||
VOUT | Output voltage accuracy | VIN = 1.8V, IOUT = 10 mA, VOUT 3.3V, 3.0V, 2.5V, EN/BYP = high | -2 | +1 | +4 | % | |
Line regulation | VOUT = 3.3V, VIN = 2V to 3.0V, IOUT = 50 mA, EN/BYP = high | +0.15 | %/V | ||||
Load regulation | VIN = 2V, VOUT = 3.3V, IOUT = 1 mA to 200 mA, EN/BYP = high | -0.007 | %/mA | ||||
VOVP | Output overvoltage protection | VOUT rising, EN/BYP = high | 5.4 | V |
EN/BYP = low | VSEL = low | IOUT = 0mA |
EN/BYP = high | Boost mode operation | |
IOUT = 0mA | Device not switching |
VOUT = 3.3V |
EN/BYP = high | Boost mode operation | |
Device not switching |
VOUT = 3.3V |