SLVS957E June 2009 – April 2016 TPS61300 , TPS61301 , TPS61305
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage range(2) | AVIN, VOUT, SW, LED1, LED2, LED3, SCL, SDA, FLASH_SYNC, ENDCL, NRESET, ENVM, GPIO/PG, HC_SEL, Tx-MASK, TS, BAL | –0.3 | 7 | V |
Current on GPIO/PG | ±25 | mA | ||
Power dissipation | Internally limited | |||
Operating ambient temperature(3), TA | –40 | 85 | °C | |
Maxium operating junction temperature, TJ(MAX) | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS6130xx | UNIT | |
---|---|---|---|
YFF (DSBGA) | |||
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 70.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 0.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 11.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 11.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
VIN | Input voltage range | 2.5 | 5.5 | V | |||
IQ | Operating quiescent current into AVIN | IOUT = 0 mA, device not switching –40°C ≤ TJ ≤ 85°C |
590 | 700 | μA | ||
IOUT(DC) = 0 mA, PWM operation VOUT = 4.95 V, voltage regulation mode |
11.3 | mA | |||||
ISD | Shutdown current | HC_SEL = 0, –40°C ≤ TJ ≤ 85°C | 1 | 5 | μA | ||
ISTBY | Standby current | HC_SEL = 1, storage capacitor balanced
–40°C ≤ TJ ≤ 85°C |
2 | 12 | μA | ||
Precharge current | VOUT = 2.3 V, 2.5 V ≤ VIN ≤ 5.5 V | 150 | mA | ||||
Precharge hysteresis (referred to VOUT) |
40 | 75 | mV | ||||
VUVLO | Undervoltage lockout threshold (analog circuitry) |
VIN falling | 2.3 | 2.4 | V | ||
OUTPUT | |||||||
VOUT | Output voltage range | Current regulation mode | VIN | 5.5 | V | ||
Voltage regulation mode | 3.825 | 5.7 | |||||
Internal feedback voltage accuracy | 2.5 V ≤ VIN ≤ 4.8 V, –20°C ≤ TJ ≤ 125°C Boost mode, PWM voltage regulation |
–2% | 2% | ||||
0.85 | Power-save mode ripple voltage | IOUT = 10 mA | 0.015 × VOUT | VP–P | |||
OVP | Output overvoltage protection | VOUT rising, 0000 ≤ OV[3:0] ≤ 0100 | 4.5 | 4.65 | 4.8 | V | |
VOUT rising, 0101 ≤ OV[3:0] ≤ 1111 | 5.8 | 6 | 6.2 | ||||
Output overvoltage protection hysteresis | VOUT falling, 0101 ≤ OV[3:0] ≤ 1111 | 0.15 | |||||
POWER SWITCH | |||||||
rDS(on) | Switch MOSFET ON-resistance | VOUT = VGS = 3.6 V | 90 | mΩ | |||
Rectifier MOSFET ON-resistance | VOUT = VGS = 3.6 V | 135 | mΩ | ||||
Ilkg(SW) | Leakage into SW | VOUT = 0 V, SW = 3.6 V, –40°C ≤ TJ ≤ 85°C | 0.3 | 4 | μA | ||
Ilim | Rectifier valley current limit (open loop) |
VOUT = 4.95 V, HC_SEL = 0, –20°C ≤ TJ ≤ 85°C PWM operation, relative to selected ILIM |
–15% | 15% | |||
OSCILLATOR | |||||||
fOSC | Oscillator frequency | 1.92 | MHz | ||||
fACC | Oscillator frequency | –10% | 7% | ||||
THERMAL SHUTDOWN, HOT DIE DETECTOR | |||||||
Thermal shutdown(1) | 140 | 160 | °C | ||||
Thermal shutdown hysteresis(1) | 20 | °C | |||||
Hot die detector accuracy(1) | –8 | 8 | °C | ||||
LED CURRENT REGULATOR | |||||||
LED1/3 current accuracy(1) | HC_SEL = 0 | 0.4 V ≤ VLED1/3 ≤ 2 V 00 ≤ DCLC13[1:0] ≤ 11, TJ = 85°C |
–10% | 10% | |||
0.4 V ≤ VLED1/3 ≤ 2 V 00 ≤ FC13[1:0] ≤ 11, TJ = 85°C |
–7.5% | 7.5% | |||||
LED2 current accuracy(1) | 0.4 V ≤ VLED2 ≤ 2 V 000 ≤ DCLC2[2:0] ≤ 111, TJ = 85°C |
–10% | 10% | ||||
0.4 V ≤ VLED2 ≤ 2 V 000 ≤ FC2[2:0] ≤ 111, TJ = 85°C |
–7.5% | 7.5% | |||||
LED1/3 current accuracy(1) | HC_SEL = 1 | 0.4 V ≤ VLED1/3 ≤ 2 V 00 ≤ DCLC13[1:0] ≤ 11, TJ = 85°C |
–10% | 10% | |||
0.4 V ≤ VLED1/3 ≤ 2 V 00 ≤ FC13[1:0] ≤ 11, TJ = 85°C |
–10% | 10% | |||||
LED2 current accuracy(1) | 0.4 V ≤ VLED2 ≤ 2 V 000 ≤ DCLC2[2:0] ≤ 111, TJ = 85°C |
–10% | 10% | ||||
0.4 V ≤ VLED1/3 ≤ 2 V 000 ≤ FC2[2:0] ≤ 111, TJ = 85°C |
–10% | 10% | |||||
LED1/3 current matching(1) | –10% | 10% | |||||
LED1/2/3 current temperature coefficient | 0.05 | %/°C | |||||
INDLED current accuracy | 1.5 V ≤ (VIN – VINDLED) ≤ 2.5 V 2.6 mA ≤ IINDLED ≤ 7.9 mA, TJ = 25°C |
–20% | 20% | ||||
INDLED current temperature coefficient | 0.04 | %/°C | |||||
VDO | LED1/2/3 sense voltage | ILED1–3 = full-scale current, HC_SEL = 0 | 400 | mV | |||
LED1/2/3 sense voltage | ILED1–3 = full-scale current, HC_SEL = 1 | 400 | 450 | ||||
VOUT dropout voltage | IOUT = –7.5 mA, device not switching | 220 | |||||
LED1/2/3 input leakage current | VLED1/2/3 = VOUT = 5 V, –40°C ≤ TJ ≤ 85°C | 0.1 | 4 | μA | |||
INDLED input leakage current | VINDLED = 0 V, –40°C ≤ TJ ≤ 85°C | 0.1 | 1 | μA | |||
STORAGE CAPACITOR ACTIVE CELL BALANCING | |||||||
Active cell balancing circuitry quiescent current into VOUT | HC_SEL = 1, storage capacitor balanced –40°C ≤ TJ ≤ 85°C |
1.7 | 6 | μA | |||
Active cell balancing accuracy | (VOUT – BAL) vs BAL voltage difference Storage capacitor balanced HC_SEL = 1 VOUT = 5.7 V |
–100 | 100 | mV | |||
BAL output drive capability | VOUT = 4.95 V, Sink and source current | ±10 | ±15 | mA | |||
Active discharge resistor | HC_SEL = 0, device in shutdown mode VOUT to BAL and BAL to GND |
0.85 | 1.5 | kΩ | |||
LED TEMPERATURE MONITORING (TPS61305, TPS61035A) | |||||||
IO(TS) | Temperature Sense Current Source | Thermistor bias current | 23.8 | μA | |||
TS Resistance (Warning Temperature) | LEDWARN bit = 1, TJ ≥ 25°C | 39 | 44.5 | 50 | kΩ | ||
TS Resistance (Hot Temperature) | LEDHOT bit = 1, TJ ≥ 25°C | 12.5 | 14.5 | 16.5 | kΩ | ||
SDA, SCL, GPIO/PG, ENVM, Tx-MASK, ENDCL, NRESET, FLASH_SYNC, HC_SEL | |||||||
V(IH) | High-level input voltage | 1.2 | V | ||||
V(IL) | Low-level input voltage | 0.4 | V | ||||
V(OL) | Low-level output voltage (SDA) | IOL = 8 mA | 0.3 | V | |||
Low-level output voltage (GPIO) | DIR = 1, IOL = 5 mA | 0.3 | |||||
V(OH) | High-level output voltage (GPIO) | DIR = 1, GPIOTYPE = 0, IOH = 8 mA | VIN – 0.4 | V | |||
I(LKG) | Logic input leakage current | Input connected to VIN or GND –40°C ≤ TJ ≤ 85°C |
0.01 | 0.1 | μA | ||
RPD | ENVM pull-down resistance | ENVM ≤ 0.4 V | 350 | kΩ | |||
ENDCL, NRESET pull-down resistance | ENDCL, NRESET ≤ 0.4 V | 350 | |||||
FLASH_SYNC pull-down resistance | FLASH_SYNC ≤ 0.4 V | 350 | |||||
Tx-MASK pull-down resistance | Tx-MASK ≤ 0.4 V | 350 | |||||
HC_SEL pull-down resistance | HC_SEL ≤ 0.4 V | 350 | |||||
C(IN) | SDA input capacitance | SDA = VIN or GND | 9 | pF | |||
SCL input capacitance | SCL = VIN or GND | 4 | |||||
GPIO/PG input capacitance | DIR = 0, GPIO/PG = VIN or GND | 9 | |||||
ENVM input capacitance | ENVM = VIN or GND | 4 | |||||
ENDCL input capacitance | ENDCL = VIN or GND | 3 | |||||
HC_SEL input capacitance | HC_SEL = VIN or GND | 3.5 | |||||
Tx-MASK input capacitance | Tx-MASK = VIN or GND | 4 | |||||
FLASH_SYNC input capacitance | FLASH_SYNC = VIN or GND | 3 | |||||
TIMING | |||||||
tNRESET | Reset pulse width | 10 | μs | ||||
Start-up time | From shutdown into DC light mode HC_SEL = 0, ILED = 100 mA |
1.4 | ms | ||||
From shutdown into voltage mode through ENVM, HC_SEL = 0, IOUT = 0 mA | 550 | μs | |||||
LED current settling time(2) triggered by a rising edge on FLASH_SYNC | MODE_CTRL[1:0] = 10, HC_SEL = 0 ILED2 = from 0 mA to 800 mA |
400 | μs | ||||
MODE_CTRL[1:0] = 10, HC_SEL = 1 ILED2 = from 0 mA to 1800 mA |
16 | ||||||
LED current settling time(2) triggered by Tx-MASK | MODE_CTRL[1:0] = 10, HC_SEL = 0 ILED2 = from 800 mA to 350 mA |
15 | μs |
PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
f(SCL) | SCL clock frequency | Standard mode | 100 | kHz | |
Fast mode | 400 | ||||
High-speed mode (write operation), CB – 100 pF maximum |
3.4 | MHz | |||
High-speed mode (read operation), CB – 100 pF maximum |
3.4 | ||||
High-speed mode (write operation), CB – 400 pF maximum |
1.7 | ||||
High-speed mode (read operation), CB – 400 pF maximum |
1.7 | ||||
tBUF | Bus free time between a STOP and START condition | Standard mode | 4.7 | µs | |
Fast mode | 1.3 | ||||
tHD, tSTA | Hold time (repeated) START condition | Standard mode | 4 | µs | |
Fast mode | 600 | ns | |||
High-speed mode | 160 | ||||
tLOW | LOW period of the SCL clock | Standard mode | 4.7 | µs | |
Fast mode | 1.3 | ||||
High-speed mode, CB – 100 pF maximum | 160 | ns | |||
High-speed mode, CB – 400 pF maximum | 320 | ||||
tHIGH | HIGH period of the SCL clock | Standard mode | 4 | µs | |
Fast mode | 600 | ns | |||
High-speed mode, CB – 100 pF maximum | 60 | ||||
High-speed mode, CB – 400 pF maximum | 120 | ||||
tSU, tSTA | Setup time for a repeated START condition | Standard mode | 4.7 | µs | |
Fast mode | 600 | ns | |||
High-speed mode | 160 | ||||
tSU, tDAT | Data setup time | Standard mode | 250 | ns | |
Fast mode | 100 | ||||
High-speed mode | 10 | ||||
tHD, tDAT | Data hold time | Standard mode | 0 | 3.45 | µs |
Fast mode | 0 | 0.9 | |||
High-speed mode, CB – 100 pF maximum | 0 | 70 | ns | ||
High-speed mode, CB – 400 pF maximum | 0 | 150 | |||
tRCL | Rise time of SCL signal | Standard mode | 20 + 0.1 CB | 1000 | ns |
Fast mode | 20 + 0.1 CB | 300 | |||
High-speed mode, CB – 100 pF maximum | 10 | 40 | |||
High-speed mode, CB – 400 pF maximum | 20 | 80 | |||
tRCL1 | Rise time of SCL signal after a repeated START condition and after an acknowledge BIT | Standard mode | 20 + 0.1 CB | 1000 | ns |
Fast mode | 20 + 0.1 CB | 300 | |||
High-speed mode, CB – 100 pF maximum | 10 | 80 | |||
High-speed mode, CB – 400 pF maximum | 20 | 160 | |||
tFCL | Fall time of SCL signal | Standard mode | 20 + 0.1 CB | 300 | ns |
Fast mode | 20 + 0.1 CB | 300 | |||
High-speed mode, CB – 100 pF maximum | 10 | 40 | |||
High-speed mode, CB – 400 pF maximum | 20 | 80 | |||
tRDA | Rise time of SDA signal | Standard mode | 20 + 0.1 CB | 1000 | ns |
Fast mode | 20 + 0.1 CB | 300 | |||
High-speed mode, CB – 100 pF maximum | 10 | 80 | |||
High-speed mode, CB – 400 pF maximum | 20 | 160 | |||
tFDA | Fall time of SDA signal | Standard mode | 20 + 0.1 CB | 300 | ns |
Fast mode | 20 + 0.1 CB | 300 | |||
High-speed mode, CB – 100 pF maximum | 10 | 80 | |||
High-speed mode, CB – 400 pF maximum | 20 | 160 | |||
tSU, tSTO | Setup time for STOP condition | Standard mode | 4 | µs | |
Fast mode | 600 | ns | |||
High-speed mode | 160 | ||||
CB | Capacitive load for SDA and SCL | 400 | pF |
TABLE OF GRAPHS | FIGURE NO. | |
---|---|---|
LED Power Efficiency | vs Input Voltage | Figure 3, Figure 4 |
DC Input Current | vs Input Voltage | Figure 5 |
LED Current | vs LED Pin Headroom Voltage | Figure 6, Figure 7, Figure 8 |
LED Current | vs LED Current Digital Code | Figure 9, Figure 10, Figure 11, Figure 12 |
INDLED Current | vs LED Pin Headroom Voltage | Figure 13 |
Voltage Mode Efficiency | vs Output Current | Figure 14, Figure 15 |
DC Output Voltage | vs Output Current | Figure 16, Figure 17 |
Maximum Output Current | vs Input Voltage | Figure 18 |
DC preCharge Current | vs Differential Input-Output Voltage | Figure 19, Figure 20 |
Valley Current Limit | Figure 21, Figure 22 | |
Balancing Current | vs Balance Pin Voltage | Figure 23 |
Supply Current | vs Input Voltage | Figure 24 |
Standby Current | vs Ambient Temperature | Figure 25 |
Temperature Detection Threshold | Figure 26, Figure 27 | |
Junction Temperature | vs Port Voltage | Figure 28 |