The TPS62136 and TPS621361 are high efficiency and easy to use synchronous step-down DC-DC converters, based on the DCS-Control™ Topology. The devices wide input voltage range of 3-V to 17-V makes it suitable for multi-cell Li-Ion as well as 12-V intermediate supply rails. The devices provide 4-A continuous output current. The TPS62136 automatically enters Power Save Mode at light loads to maintain high efficiency across the whole load range. With that, the device is well suited for applications that require connected standby performance, like ultra low power computers. With the MODE pin set to low, the switching frequency of the device is adapted automatically based on the input and output voltage. This technique is called Automatic Efficiency Enhancement (AEE™) and maintains high conversion efficiency over the whole operation range. It provides a 1% output voltage accuracy in PWM mode and therefore enables the design of a power supply with high output voltage accuracy.
The device has a typical quiescent current of 18 µA. In shutdown mode the current is typically 1 µA and the output is actively discharged for TPS62136 while the output voltage discharge feature is disabled in TPS621361.
The TPS62136 is available as an adjustable version, packaged in a 3-mm x 2-mm VQFN package.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS62136 | VQFN | 3.00 mm x 2.00 mm |
TPS621361 | VQFN | 3.00 mm x 2.00 mm |
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DATE | REVISION | NOTES |
---|---|---|
March 2017 | * | Initial release. |
DEVICE NUMBER | FEATURES | OUTPUT VOLTAGE | MARKING |
---|---|---|---|
TPS62136RGX | nominal switching frequency = 1 MHz output voltage discharge voltage selection input / output VSEL/FB2 HICCUP current limit |
adjustable | 62136 |
TPS621361RGX | nominal switching frequency = 1 MHz voltage selection input / output VSEL/FB2 |
adjustable | 621361 |
TPS62135RGX(1) | nominal switching frequency = 2.5 MHz output voltage discharge voltage selection input / output VSEL/FB2 HICCUP current limit |
adjustable | 62135 |
TPS621351RGX(1) | voltage selection input / output VSEL/FB2 nominal switching frequency = 2.5 MHz |
adjustable | 621351 |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NUMBER | ||
EN | 8 | I | This is the enable pin of the device. Connect to logic low to disable the device. Pull high to enable the device. Do not leave this pin unconnected. |
FB | 5 | I | Voltage feedback input, connect resistive output voltage divider to this pin. |
FB2 | 4 | O | Open drain of an internal switch to GND. Allows to turn on a resistor in parallel to the feedback resistor R2 and increase the output voltage with VSEL = high. |
GND | 3 | Ground pin. | |
MODE | 10 | I | The device runs in PFM/PWM mode when this pin is pulled low. When the pin is pulled high, the device runs in forced PWM mode. Do not leave this pin unconnected. |
PG | 7 | O | Open drain power good output. |
SS/TR | 9 | I | Soft-Start / Tracking pin. An external capacitor connected from this pin to GND defines the rise time for the internal reference voltage. The pin can also be used as an input for tracking and sequencing - see Detailed Description section in this document. |
SW | 2 | This is the switch pin of the converter and is connected to the internal Power MOSFETs. | |
VIN | 1 | Power supply input. Make sure the input capacitor is connected as close as possible between pin VIN and GND. | |
VOS | 6 | I | Output voltage sense pin. Connect directly to the positive pin of the output capacitor. |
VSEL | 11 | I | Voltage scaling control input. Turns on an internal switch from FB2 to GND when this pin is set high. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Pin voltage range(2) | VIN | -0.3 | 20 | V |
SW, VOS | -0.3 | VIN+0.3 | V | |
SW (transient for t<10ns)(3) | -2 | 25.5 | V | |
EN, MODE, VSEL, PG, FB, FB2, SS/TR | -0.3 | VIN+0.3 | V | |
Operating junction temperature, TJ | -40 | 150 | °C | |
Storage temperature range, Tstg | -65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human Body Model - (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charge Device Model - (CDM), per JEDEC specification JESD22-C101(2) | ±500 | V |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIN | Supply voltage range | 3 | 17 | V | ||
VOUT | Output voltage range | 0.8 | 12 | V | ||
L | Effective inductance | 0.7 | 1.5 | 2.9 | µH | |
CO | Effective output capacitance(1) | 12 | 47 | 200(3) | µF | |
CI | Effective input capacitance(1)(2) | 3 | 10 | µF | ||
TJ | Operating junction temperature | -40 | +125 | °C |
THERMAL METRIC(1) | TPS62136, TPS621361 | UNIT | |
---|---|---|---|
RGX (VQFN) | |||
11 PIN | |||
RθJA | Junction-to-ambient thermal resistance | 38.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 2.0 | °C/W |
RθJB | Junction-to-board thermal resistance | 7.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.1 | °C/W |
ψJB | Junction-to-board characterization parameter | 7.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY | |||||||
IQ | Operating Quiescent Current | EN = high, IOUT= 0 mA, Device not switching, TJ= 85 °C | 35 | µA | |||
IQ | Operating Quiescent Current | EN = high, IOUT= 0 mA, Device not switching | 18 | 46 | µA | ||
ISD | Shutdown Current | EN = 0 V, Nominal value at TJ= 25 °C, Max value at TJ= 85 °C | 1 | 8 | µA | ||
VUVLO | Undervoltage Lockout Threshold | Rising Input Voltage | 2.8 | 2.9 | 3.0 | V | |
Falling Input Voltage | 2.5 | 2.6 | 2.7 | V | |||
TSD | Thermal Shutdown Temperature | Rising Junction Temperature | 160 | °C | |||
Thermal Shutdown Hysteresis | 20 | ||||||
CONTROL (EN, SS/TR, PG, MODE, VSEL) | |||||||
VIH | High Level Input Voltage for VSEL, MODE pin | 0.9 | V | ||||
VIL | Low Level Input Voltage for VSEL, MODE pin | 0.3 | V | ||||
VIH | Input Threshold Voltage for EN pin; rising edge | 0.77 | 0.8 | 0.83 | V | ||
VIL | Input Threshold Voltage for EN pin; falling edge | 0.67 | 0.7 | 0.73 | V | ||
ILKG_EN | Input Leakage Current for EN, VSEL, MODE | VIH = VIN or VIL= GND | 100 | nA | |||
VTH_PG | Power Good Threshold Voltage; dc level | Rising (%VOUT) | 93% | 96% | 98% | ||
Hysteresis | Falling (%VOUT) | 3% | 4.5% | ||||
VOL_PG | Power Good Output Low Voltage | IPG = 2 mA | 0.07 | 0.3 | V | ||
ILKG_PG | Input Leakage Current (PG) | VPG = 5 V | 100 | nA | |||
ISS/TR | SS/TR pin source current | 2.5 | µA | ||||
ISS/TR tolerance | TJ= -40 °C to +125 °C | ±0.2 | µA | ||||
Tracking gain | VFB / VSS/TR | 1 | |||||
Tracking offset | feedback voltage with VSS/TR = 0 V | 11 | mV | ||||
POWER SWITCH | |||||||
RDS(ON) | High-Side MOSFET ON-Resistance | VIN ≥ 4 V | 100 | 180 | mΩ | ||
Low-Side MOSFET ON-Resistance | VIN ≥ 4 V | 39 | 67 | mΩ | |||
ILIMH | High-Side MOSFET Current Limit | dc value(2) | 4.8 | 5.6 | 6.5 | A | |
ILIML | Low-Side MOSFET Current Limit | dc value(2) | 4.8 | 5.6 | 6.5 | A | |
ILIMNEG | Negative current limit | dc value | 1.5 | A | |||
fSW | PWM Switching Frequency | MODE = high; VIN = 12V, VOUT = 3.3V; IOUT = 1A | 1 | MHz | |||
OUTPUT | |||||||
VFB | Feedback Voltage | 0.7 | V | ||||
ILKG_FB | Input Leakage Current (FB) | VFB= 0.7 V | 1 | 70 | nA | ||
VFB | Feedback Voltage Accuracy(1) | VIN ≥ VOUT +1 V | PWM mode | -1% | 1% | ||
VIN ≥ VOUT +1 V; VOUT ≥ 1.5 V | PFM mode; Co,eff ≥ 47 µF, L = 1.5 µH | -1% | 2% | ||||
1 V ≤ VOUT < 1.5 V | PFM mode; Co,eff ≥ 60 µF, L = 1.5 µH | -1% | 2.5% | ||||
VOUT < 1 V | PFM mode; Co,eff ≥ 75 µF, L = 1.5 µH | -1% | 2.5% | ||||
VFB | Feedback Voltage Accuracy with Voltage Tracking | VIN ≥ VOUT +1 V; VSS/TR = 0.35 V | PWM mode | -2% | 7.5% | ||
RDS(ON) | FB2 resistance to GND when VSEL= high | 10 | 30 | Ω | |||
ILKG_FB2 | Input Leakage Current in FB2 when VSEL = low | 1 | 70 | nA | |||
Load Regulation | PWM mode operation | 0.05 | %/A | ||||
Line Regulation | PWM mode operation, IOUT= 1 A, VIN ≥ Vout + 1 V or VIN ≥ 3.5 V whichever is larger | 0.02 | %/V | ||||
Output Discharge Resistance | TPS62136 only | 100 | Ω | ||||
tdelay | Start-up Delay time | IO= 0 mA, Time from EN=high to start switching; VIN applied already | 200 | 300 | µs | ||
tramp | Ramp time; SS/TR pin open | IO= 0 mA, Time from first switching pulse until 95% of nominal output voltage; device not in current limit | 150 | µs |
EN = low |
EN = high | device not switching |