SUPPLY |
VIN |
Input voltage range(1) |
|
3 |
|
17 |
V |
IQ |
Operating quiescent current |
EN = High, IOUT = 0 mA, device not switching |
|
|
17 |
30 |
µA |
TJ = -40°C to +85°C |
|
17 |
25 |
ISD |
Shutdown current(2) |
EN = Low |
|
|
1.5 |
25 |
µA |
TJ = -40°C to +85°C |
|
1.5 |
4 |
VUVLO |
Undervoltage lockout threshold |
Falling input voltage |
2.6 |
2.7 |
2.82 |
V |
Hysteresis |
|
180 |
|
mV |
TSD |
Thermal shutdown temperature |
rising temperature |
|
160 |
|
°C |
Thermal shutdown hysteresis |
falling temperature |
|
20 |
|
CONTROL (EN, PG) |
VEN_H |
High level input threshold voltage (EN) |
|
0.9 |
0.6 |
|
V |
VEN_L |
Low level input threshold voltage (EN) |
|
|
0.56 |
0.3 |
V |
ILKG_EN |
Input leakage current (EN) |
EN = VIN or GND |
|
0.01 |
1 |
µA |
VTH_PG |
Power good threshold voltage |
Rising (%VOUT) |
92% |
95% |
98% |
|
Falling (%VOUT) |
87% |
90% |
93% |
|
VOL_PG |
Power good output low voltage |
IPG = –2 mA |
|
0.07 |
0.3 |
V |
ILKG_PG |
Input leakage current (PG) |
VPG = 1.8 V |
|
1 |
400 |
nA |
POWER SWITCH |
RDS(ON) |
High-side MOSFET ON-resistance |
VIN ≥ 6 V |
|
300 |
600 |
mΩ |
VIN= 3 V |
|
430 |
|
Low-side MOSFET ON-resistance |
VIN≥ 6 V |
|
120 |
200 |
mΩ |
VIN = 3 V |
|
165 |
|
ILIMF |
High-side MOSFET forward current limit(3) |
VIN = 12 V, TJ= 25°C |
0.85 |
1.05 |
1.35 |
A |
OUTPUT |
VREF |
Internal reference voltage(4) |
|
|
0.8 |
|
V |
ILKG_FB |
Pin leakage current (FB) |
TPS62170, VFB= 1.2 V |
|
5 |
400 |
nA |
VOUT |
Output voltage range (TPS62170) |
VIN ≥ VOUT |
0.9 |
|
6.0 |
V |
Initial output voltage accuracy(5) |
PWM mode operation, VIN ≥ VOUT + 1 V |
–3% |
|
3% |
|
Power save mode operation, COUT= 22 µF |
-3.5% |
|
4% |
|
DC output voltage load regulation |
VIN = 12 V, VOUT = 3.3 V, PWM mode operation |
|
0.05 |
|
%/A |
DC output voltage line regulation |
3 V ≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 0.5 A, PWM mode operation |
|
0.02 |
|
%/V |