The TPS62560 device is a high efficiency synchronous step down converter, optimized for battery powered portable applications. It provides up to 600-mA output current from batteries, such as single Li-Ion or other common chemistry AA and AAA cells.
With an input voltage range of 2.5 V to 5.5 V, the device is targeted to power a large variety of portable handheld equipment or POL applications.
The TPS62560 family operates at 2.25-MHz fixed switching frequency and enters a Power Save Mode operation at light load currents to maintain a high efficiency over the entire load current range.
The Power Save Mode is optimized for low output voltage ripple. For low noise applications, the device can be forced into fixed frequency PWM mode by pulling the MODE pin high. In the shutdown mode the current consumption is reduced to less than 1 µA. The TPS62560 allows the use of small inductors and capacitors to achieve a small solution size.
TPS62560 and TPS62562 are available in a 2-mm × 2-mm, 6-pin SON package, whereas the TPS62561 is available in a 5-pin SOT package.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS62560, TPS62562 | SON (6) | 2.00 mm × 2.00 mm |
TPS62561 | SOT (5) | 2.90 mm × 1.60 mm |
Changes from C Revision (December 2009) to D Revision
Changes from B Revision (March 2009) to C Revision
Changes from A Revision (July 2008) to B Revision
Changes from * Revision (January 2008) to A Revision
Part Number | Package | Mode Pin | Output Voltage(1) | Device Marking(2) |
---|---|---|---|---|
TPS62560 | SON (6) | yes | Adjustable | CEY |
TPS62561 | SOT (5) | forced PWM only | Adjustable | CVO |
TPS62562 | SON (6) | yes | 1.8 V fixed | NXT |
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | No. QFN-6 |
No. TSOT23-5 |
||
EN | 4 | 3 | I | This is the enable pin of the device. Pulling this pin to low forces the device into shutdown mode. Pulling this pin to high enables the device. This pin must be terminated. |
FB | 3 | 4 | I | Feedback pin for the internal regulation loop. Connect the external resistor divider to this pin. In the fixed-output-voltage option, connect this terminal directly to the output capacitor. |
GND | 6 | 2 | — | GND supply pin |
MODE | 2 | N/A | I | This pin is only available as a QFN package option. MODE pin = high forces the device to operate in the fixed-frequency PWM mode. MODE pin = low enables the power-save mode with automatic transition from PFM mode to fixed-frequency PWM mode. |
SW | 1 | 5 | O | This is the switch pin and is connected to the internal MOSFET switches. Connect the external inductor between this pin and the output capacitor. |
VIN | 5 | 1 | — | VIN power-supply pin |
Exposed Thermal Pad | — | N/A | — | Must be soldered to achieve appropriate power dissipation. Should be connected to GND. |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input voltage range(2) | –0.3 | 7 | V | ||
Voltage range at EN, MODE | –0.3 | VIN +0.3, ≤ 7 | |||
Voltage on SW | –0.3 | 7 | |||
Peak output current | Internally limited | A | |||
TJ | Maximum operating junction temperature | –40 | 125 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge(3) | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
Machine model | ±200 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Supply voltage | 2.5 | 5.5 | V |
VOUT | Output voltage range for adjustable voltage | 0.85 | VIN | V |
TA | Operating ambient temperature | –40 | 85 | °C |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS62560, TPS62562 | TPS62561 | UNIT | |
---|---|---|---|---|
DRV (SON) | DDC (SOT) | |||
6 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 67.8 | 226.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 88.5 | 40.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 37.2 | 48.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.0 | 0.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.6 | 48.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.9 | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage range | 2.5 | 5.5 | V | ||
IOUT | Output current | VIN 2.5 V to 5.5 V | 600 | mA | ||
IQ | Operating quiescent current | IOUT = 0 mA, PFM mode enabled (MODE = GND), device not switching |
15 | μA | ||
IOUT = 0 mA, PFM mode enabled (MODE = GND), device switching, VOUT = 1.8 V, See (1) |
18.5 | |||||
IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, VIN = 3 V |
3.8 | mA | ||||
ISD | Shutdown current | EN = GND | 0.5 | μA | ||
UVLO | Undervoltage lockout threshold | Falling | 1.85 | V | ||
Rising | 1.95 | |||||
ENABLE, MODE | ||||||
VIH | High-level input voltage, EN, MODE | 2 V ≤ VIN ≤ 5.5 V | 1 | VIN | V | |
VIL | Low-level input voltage, EN, MODE | 2 V ≤ VIN ≤ 5.5 V | 0 | 0.4 | V | |
IIN | Input bias current, EN, MODE | EN, MODE = GND or VIN | 0.01 | 1 | μA | |
POWER SWITCH | ||||||
RDS(on) | High side MOSFET on-resistance | VIN = VGS = 3.6 V, TA = 25°C | 252 | 492 | mΩ | |
Low side MOSFET on-resistance | 194 | 391 | ||||
ILIMF | Forward current limit, high and low side MOSFET | VIN = VGS = 3.6 V | 0.8 | 1 | 1.2 | A |
TSD | Thermal shutdown | Increasing junction temperature | 140 | °C | ||
Thermal-shutdown hysteresis | Decreasing junction temperature | 20 | ||||
OSCILLATOR | ||||||
fSW | Oscillator frequency | 2 V ≤ VIN ≤ 5.5 V | 2.25 | MHz | ||
OUTPUT | ||||||
VOUT | Adjustable-output voltage range | 0.85 | VIN | V | ||
VOUT | TPS62562 fixed output voltage | VIN ≥ 1.8 V | 1.8 | V | ||
Vref | Reference voltage | 600 | mV | |||
VFB | Feedback voltage, PWM mode | MODE = VIN, PWM operation, for fixed-output-voltage versions VFB = VOUT, 2.5 V ≤ VIN ≤ 5.5 V, 0 mA ≤ IOUT ≤ 600 mA (3) |
–2.5% | 0% | 2.5% | |
Feedback voltage, PFM mode | MODE = GND, device in PFM mode, voltage positioning active(1) | 1% | ||||
Load regulation | PWM mode | –1 | %/A | |||
tStart Up | Start-up time | Time from active EN to reach 95% of VOUT nominal | 500 | μs | ||
tRamp | VOUT ramp-up time | Time to ramp from 5% to 95% of VOUT | 250 | μs | ||
Ilkg | Leakage current into SW terminal | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND (2) | 0.5 | 1 | μA |