SLVS897C January 2009 – December 2015 TPS62590
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VIN | Input voltage(2) | –0.3 | 7 | V | |
Voltage at EN, MODE | –0.3 | VIN + 0.3, ≤ 7 | |||
Voltage on SW | –0.3 | 7 | |||
Peak output current | Internally limited | A | |||
TJ | Maximum operating junction temperature | –40 | 125 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Supply voltage | 2.5 | 5.5 | V |
Output voltage for adjustable voltage | 0.75 | VIN | V | |
TA | Operating ambient temperature | –40 | 85 | °C |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS62590 | UNIT | |
---|---|---|---|
DRV (WSON) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 67.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 88.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 37.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.0 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage range | 2.5 | 5.5 | V | ||
IOUT | Output current | VIN 2.7 V to 5.5 V | 1000 | mA | ||
VIN 2.5 V to 2.7 V | 600 | |||||
IQ | Operating quiescent current | IOUT = 0 mA, PFM mode enabled (MODE = GND) device not switching, see (1) |
15 | μA | ||
IOUT = 0 mA, switching with no load (MODE = VIN) PWM operation, VOUT = 1.8 V, VIN = 3 V |
3.8 | mA | ||||
ISD | Shutdown current | EN = GND | 0.5 | μA | ||
UVLO | Undervoltage lockout threshold | Falling | 1.85 | V | ||
Rising | 1.95 | |||||
ENABLE, MODE | ||||||
VIH | High level input voltage, EN, MODE | 2.5 V ≤ VIN ≤ 5.5 V | 1 | VIN | V | |
VIL | Low level input voltage, EN, MODE | 2.5 V ≤ VIN ≤ 5.5 V | 0 | 0.4 | V | |
IIN | Input bias current, EN, MODE | EN, MODE = GND or VIN | 0.01 | 1 | μA | |
POWER SWITCH | ||||||
RDS(on) | High side MOSFET on-resistance | VIN = VGS = 3.6 V, TA = 25°C | 250 | mΩ | ||
Low side MOSFET on-resistance | 190 | |||||
ILIMF | Forward current limit MOSFET high side and low side | VIN = VGS = 3.6 V | 1.19 | 1.4 | 1.68 | A |
TSD | Thermal shutdown | Increasing junction temperature | 140 | °C | ||
Thermal shutdown hysteresis | Decreasing junction temperature | 20 | ||||
OSCILLATOR | ||||||
fSW | Oscillator frequency | 2.5 V ≤ VIN ≤ 5.5 V | 2.25 | MHz | ||
OUTPUT | ||||||
VO | Adjustable output voltage range | 0.75 | VI | V | ||
VREF | Reference voltage | 600 | mV | |||
VFB(PWM) | Feedback voltage | MODE = VIN, PWM operation, 2.5 V ≤ VIN ≤ 5.5 V, see (2) |
–2.5% | 0% | 2.5% | |
VFB(PFM) | Feedback voltage PFM mode | MODE = GND, device in PFM mode, +1% voltage positioning active, see (1) | 1% | |||
Load regulation | –1 | %/A | ||||
tStart Up | Start-up time | Time from active EN to reach 95% of VOUT | 500 | μs | ||
tRamp | VOUT ramp-up time | Time to ramp from 5% to 95% of VOUT | 250 | μs | ||
Ilkg | Leakage current into SW pin | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND, see (3) |
0.1 | 1 | μA |