SLVSFU8C January 2022 – June 2024 TPS62843
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
IQ | Operating Quiescent Current (Power Save Mode) | Non-switching, VEN = VIN, IOUT = 0µA, TJ = -40°C to 85°C | 275 | 1500 | nA | |
Switching, VEN = VIN, IOUT = 0µA, VOUT = 0.7V | 350 | nA | ||||
ISD | Shutdown Current | VEN = 0V, VSET = GND, TJ = -40°C to 85°C | 4 | 850 | nA | |
UVLO | ||||||
VUVLO(R) | Undervoltage Lockout Rising Threshold | VIN rising, IOUT = 0µA | 1.75 | 1.8 | V | |
VUVLO(F) | Undervoltage Lockout Falling Threshold | VIN falling, IOUT = 0µA | 1.65 | 1.7 | V | |
VUVLO(H) | Undervoltage Lockout Hysteresis | 100 | mV | |||
VSET PIN | ||||||
VSET(LKG) | VSET Input leakage current | TJ = -40°C to 85°C | 10 | 800 | nA | |
VSET(H) | VSET High-level detection | Voltage at VSET during startup | 1.0 | V | ||
RSET | RSET accuracy | TJ = -20°C to 125°C | -4 | 4 | % | |
RSET | RSET accuracy | TJ = -40°C to 125°C | -3.5 | 3.5 | % | |
ENABLE | ||||||
VEN(R) | EN voltage rising threshold | EN rising, enable switching | 0.8 | V | ||
VEN(F) | EN voltage falling threshold | EN falling, disable switching | 0.4 | V | ||
VEN(LKG) | EN Input leakage current | VEN > 0.8V, TJ = -40°C to 85°C | 1 | 25 | nA | |
REN;PD | EN internal pull-down resistance | EN pin to GND | 425 | 500 | kΩ | |
VOUT VOLTAGE | ||||||
VOUT | DC Output voltage accuracy | PWM operation, TJ = -20°C to 125°C | -1 | +1 | % | |
VOUT | DC Output voltage accuracy | PWM operation, TJ = -40°C to 125°C | -1.5 | +1.5 | % | |
VOUT | TPS628436 | 0.4 | 0.8 | V | ||
TPS628437 | 0.8 | 1.8 | V | |||
TPS628438 | 1.8 | 3.6 | V | |||
IVOS(LKG) | VOS input leakage current | TPS628436, VEN = VIN, VVOS = 0.7V, TJ = -40°C to 85°C | 100 | nA | ||
TPS628437, VEN = VIN, VVOS = 1.2V, TJ = -40°C to 85°C | 100 | 250 | nA | |||
TPS628438, VEN = VIN, VVOS = 3.3V, TJ = -40°C to 85°C | 275 | 450 | nA | |||
fSW | IOUT = 400mA | 1.5 | MHz | |||
STARTUP | ||||||
tSS | TPS628436 soft-start time | From VOUT= 0% to VOUT= 95% of VOUT nominal | 0.45 | 0.6 | ms | |
TPS628438 soft-start time | 1.0 | 1.4 | ||||
TPS628437 soft-start time | 0.7 | 1.0 | ||||
tStartup_delay | EN HIGH to start of switching delay | R2D = GND | 330 | 560 | µs | |
POWER STAGE | ||||||
RDSON(HS) | High-side MOSFET on-resistance | VIN = 3.6V, IOUT = 300mA | 170 | 260 | mΩ | |
RDSON(LS) | Low-side MOSFET on-resistance | VIN = 3.6V, IOUT = 300mA | 70 | 115 | mΩ | |
ILKG_SW | Leakage Current into SW-Pin | VSW = 0.7V, TJ = -40°C to 85°C | 0 | 35 | nA | |
ILKG_SW | Leakage Current into SW-Pin | VSW = 1.2V, TJ = -40°C to 85°C | 0 | 45 | nA | |
ILKG_SW | Leakage Current into SW-Pin | VVIN > VSW, VSW = 3.3V, TJ = -40°C to 85°C | 0 | 45 | nA | |
OVERCURRENT PROTECTION | ||||||
IHS(OC) | High-side peak current limit | VIN ≧ 2.2V | 0.9 | 1.1 | 1.3 | A |
ILS(OC) | Low-side valley current limit | VIN ≧ 2.2V | 0.79 | 1.0 | 1.11 | A |
OUTPUT DISCHARGE | ||||||
RDSCH_VOS | Output discharge resistor on VOS pin | VEN = GND, I(VOS) = -10mA | 7 | 22 | Ω | |
THERMAL SHUTDOWN | ||||||
TJ(SD) | Thermal shutdown threshold | Temperature rising | 160 | °C | ||
TJ(HYS) | Thermal shutdown hysteresis | 20 | °C |