SLVSHX6 December 2024 TPS62966 , TPS62968
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
IQ | Quiescent current | EN = High, no load, device switching, fsw = 1MHz | 5 | mA | ||
ISD | Shutdown current | EN = GND, TJ = –40°C to 125°C | 0.3 | 70 | µA | |
VUVLO | Undervoltage lockout | VIN rising, TJ = –40°C to 125°C | 2.85 | 2.92 | 3.0 | V |
VHYS | Undervoltage lockout hysteresis | 200 | mV | |||
TJSD | Thermal shutdown threshold | TJ rising | 170 | °C | ||
Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
CONTROL and INTERFACE | ||||||
VH_EN | High-level input-threshold voltage at EN/SYNC | 0.97 | 1.01 | 1.04 | V | |
VL_EN | Low-level input-threshold voltage at EN/SYNC | 0.87 | 0.9 | 0.93 | V | |
VH_SYNC | High-level input-threshold clock signal on EN/SYNC | EN/SYNC = clock | 1.1 | V | ||
VL_SYNC | Low-level input-threshold clock signal on EN/SYNC | EN/SYNC = clock | 0.4 | V | ||
IEN,LKG | Input leakage current into EN/SYNC | EN/SYNC = GND or VIN, –40 ℃ ≤ TJ ≤ 125 ℃ | 5 | 160 | nA | |
RPD | Pulldown resistor on EN/SYNC | EN/SYNC = Low | 330 | 500 | kΩ | |
tdelay | Enable delay time | Time from EN/SYNC high to device starts switching, RS-CONF = 80.6kΩ | 1 | ms | ||
INR/SS | NR/SS source current | 67.5 | 75 | 82.5 | µA | |
RS-CONF | S-CONF resistor step range accuracy | RS-CONF tolerance for all settings according to S-CONF Table | –4 | +4 | % | |
VPG | Power-good threshold | VFB rising, referenced to VFB nominal | 93 | 95 | 98 | % |
VPG | Power-good threshold | VFB falling, referenced to VFB nominal | 88 | 90 | 93 | % |
VPG,OL | Low-level output voltage at PG pin | ISINK = 1mA | 0.4 | V | ||
IPG,LKG | Input leakage current into PG pin | VPG = 5V; –40℃ ≤ TJ ≤ 125℃ | 5 | 500 | nA | |
tPG,DLY | Power-good delay time | VFB falling | 9 | µs | ||
OUTPUT | ||||||
ton | Minimum on-time | VIN ≥ 5V, Iout = 1A | 35 | ns | ||
toff | Minimum off-time | VIN ≥ 5V, Iout = 1A | 50 | ns | ||
VFB | Feedback regulation accuracy | –40℃ ≤ TJ ≤ 125℃ | 0.594 | 0.6 | 0.606 | V |
IFB,LKG | Input leakage current into FB | VFB = 0.6V, –40℃ ≤ TJ ≤ 125℃ | 1 | 70 | nA | |
IVO,LKG | Input leakage current into VO | VVO = 1.2V, –40℃ ≤ TJ ≤ 125℃ | 0.01 | 30 | µA | |
PSRR | Power supply rejection ratio | VIN = 12V, 1.2VOUT, 1A, CNR/SS = 470nF, fsw = 1MHz, CFF = open, L1 = 1µH, COUT = 4 × 22µF, f ≤ 100kHz | 65 | dB | ||
VNRMS | Output voltage RMS noise | VIN = 12V, BW = 100Hz to 100kHz, CNR/SS = 470nF, fSW = 1MHz, VOUT = 1.2V, CFF = open, L1 = 1µH, COUT = 4 × 22µF | 24.4 | µVRMS | ||
Vopp | Output ripple voltage at fSW | VIN = 12V, fSW = 1MHz, VOUT = 1.2V, L1 = 1µH, COUT = 4 × 22µF, Lf = 10nH, Cf = 22µF | 36 | µVRMS | ||
RDIS | Output discharge resistance | EN/SYNC = GND, VOUT = 1.2V, VIN ≥ 5V. | 4 | Ω | ||
RDIS | Output discharge resistance | EN/SYNC = GND, VOUT = 5V, VIN ≥ 5V. | 16 | Ω | ||
fSW | Switching frequency | 1.1MHz setting | 1.0 | 1.1 | 1.2 | MHz |
fSW | Switching frequency | 0.7MHz setting | 0.63 | 0.7 | 0.77 | MHz |
fSW | Switching frequency | 0.5MHz setting | 0.45 | 0.5 | 0.55 | MHz |
DSYNC | Synchronization duty cycle | 45 | 55 | % | ||
tsync_elay | Synchronization phase delay | Phase delay from EN/SYNC rising edge to SW rising edge | 90 | ns | ||
ISWpeak | Peak switch current limit | TPS62994 | 6.4 | 7.3 | 8.1 | A |
ISWvalley | Valley switch current limit | TPS62994 | 7.1 | A | ||
ISWpeak | Peak switch current limit | TPS62996 | 8.6 | 9 | 9.6 | A |
ISWvalley | Valley switch current limit | TPS62996 | 8.8 | A | ||
ISWpeak | Peak switch current limit | TPS62998 | 11 | 11.75 | 12.5 | A |
ISWvalley | Valley switch current limit | TPS62998 | 10.8 | A | ||
Inegvalley | Negative valley current limit | –2.9 | –2 | A | ||
RDS(ON) | High-side FET on-resistance | VIN ≥ 5V | 25 | mΩ | ||
Low-side FET on-resistance | VIN ≥ 5V | 7 | mΩ |