SLVSEK4C July   2019  – February 2020 TPS63810 , TPS63811

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Efficiency versus Output Current
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     BGA Package (YFF) Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Control Scheme
        1. 8.3.1.1 Buck Operation
        2. 8.3.1.2 Boost Operation
        3. 8.3.1.3 Buck-Boost Operation
      2. 8.3.2  Control Scheme
      3. 8.3.3  Power-Save Mode Operation (PSM)
      4. 8.3.4  Forced-PWM Operation (FPWM)
      5. 8.3.5  Ramp-PWM Operation (RPWM)
      6. 8.3.6  Device Enable (EN)
      7. 8.3.7  Undervoltage Lockout (UVLO)
      8. 8.3.8  Soft Start
      9. 8.3.9  Output Voltage Control
        1. 8.3.9.1 Dynamic Voltage Scaling
      10. 8.3.10 Protection Functions
        1. 8.3.10.1 Input Voltage Protection (IVP)
        2. 8.3.10.2 Current Limit Mode and Overcurrent Protection
        3. 8.3.10.3 Thermal Shutdown
      11. 8.3.11 Power Good
      12. 8.3.12 Load Disconnect
      13. 8.3.13 Output Discharge
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Interface Description
      2. 8.5.2 Standard-, Fast-, and Fast-Mode Plus Protocol
      3. 8.5.3 I2C Update Sequence
    6. 8.6 Register Map
      1. 8.6.1 Register Description
        1. 8.6.1.1 Register Map
        2. 8.6.1.2 Register CONTROL (Slave address: 0b1110101; Register address: 0x01; Default: 0x00 or 0x20)
          1. Table 3. Register CONTROL Field Descriptions
        3. 8.6.1.3 Register STATUS (Slave address: 0b1110101; Register address: 0x02; Default: 0x00)
          1. Table 4. Register STATUS Field Descriptions
        4. 8.6.1.4 Register DEVID (Slave address: 0b1110101; Register address: 0x03; Default: 0x04)
          1. Table 5. Register DEVID Field Descriptions
        5. 8.6.1.5 Register VOUT1 (Slave address: 0b1110101; Register address: 0x04; Default: 0x3C)
          1. Table 6. Register VOUT1 Field Descriptions
        6. 8.6.1.6 Register VOUT2 (Slave address: 0b1110101; Register address: 0x05; Default: 0x42)
          1. Table 7. Register VOUT2 Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 1.8-V to 5.2-V Output Smartphone Power Supply
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Input Capacitor Selection
          2. 9.2.1.2.2 Inductor Selection
          3. 9.2.1.2.3 Output Capacitor Selection
          4. 9.2.1.2.4 I2C Pullup Resistor Selection
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) TPS63810, TPS63811 UNIT
YFF (DSBGA)
15 PINS
RθJA Junction-to-ambient thermal resistance 80.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.6 °C/W
RθJB Junction-to-board thermal resistance 20.5 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 20.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.