SLVSEW4 April 2019 TPS650002-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
OPERATING VOLTAGE | ||||||
VIN | Input voltage for VINDCDC of DC-DC converter | 2.3 | 6 | V | ||
Input voltage for LDO1 (VINLDO1) | See (1) | 1.6 | 6 | V | ||
Input voltage for LDO2 (VINLDO2) | See (1) | 1.6 | 6 | V | ||
Internal undervoltage (UVLO) lockout threshold | VCC falling | 1.72 | 1.77 | 1.82 | V | |
Internal undervoltage (UVLO) lockout hysteresis | 160 | mV | ||||
SUPPLY CURRENT | ||||||
IQ | Operating quiescent current | MODE low, EN_DCDC high,
EN_LDO1, EN_LDO2 low, IOUT = 0 mA and no switching |
23 | 32 | μA | |
MODE low, EN_DCDC low,
EN_LDO1, EN_LDO2 high, IOUT = 0 mA IOUT = 0 mA and no switching |
50 | 57 | ||||
EN_DCDC high, MODE high,
EN_LDO1, EN_LDO2 low, IOUT = 0 mA |
4 | mA | ||||
ISD | Shutdown Current | EN_DCDC low EN_LDO1 and EN_LDO2 low | 0.16 | 2.2 | μA | |
DIGITAL PINS (EN_DCDC, EN_LDO1, EN_LDO2, MODE, PG | ||||||
VIH | High-level input voltage | 1.2 | V | |||
VIL | Low-level input voltage | 0.4 | V | |||
VOL | Low-level output voltage | PG pins only, IO = –100 μA | 0.4 | V | ||
Ilkg | Input leakage current | MODE, EN_DCDC, EN_LDO1, EN_LDO2 tied to GND or VINDCDC, | 0.01 | 0.1 | μA | |
OSCILLATOR | ||||||
fSW | Oscillator frequency | 2.01 | 2.25 | 2.41 | MHz | |
STEP-DOWN CONVERTER POWER SWITCH | ||||||
rDS(on) | High-side MOSFET ON-resistance | VINDCDC = VGS = 3.6 V | 240 | 480 | mΩ | |
Low-side MOSFET ON-resistance | VINDCDC = VGS = 3.6 V | 185 | 380 | mΩ | ||
IO | DC output current | 2.3 V ≤ VINDCDC ≤ 2.5 V | 300 | mA | ||
2.5 V ≤ VINDCDC ≤ 6 V | 600 | |||||
ILIMF | Forward current limit, PMOS and NMOS | 2.3 V ≤ VINDCDC ≤ 6 V | 800 | 1000 | 1400 | mA |
STEP-DOWN CONVERTER POWER SWITCH (continued) | ||||||
TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | ||
Thermal shutdown hysteresis | Decreasing junction temperature | 30 | °C | |||
STEP-DOWN CONVERTER OUTPUT VOLTAGE | ||||||
VDCDC | Fixed output voltage, VDCDC | 1.825 | V | |||
VDCDC | Output-voltage DC accuracy (PWM mode)(2) | MODE = high,
2.3 ≤ VINDCDC ≤ 6 V |
-1.5% | +1.5% | ||
Output-voltage DC accuracy (PFM mode) | MODE low
+1% voltage positioning active |
1% | ||||
Load regulation (PWM mode) | MODE high | 0.5 | %/A | |||
RDIS | Internal discharge resistance at SW | EN_DCDC low | 450 | Ω | ||
LOW-DROPOUT REGULATORS | ||||||
VI | Input voltage for LDOx (VINLDOx) | 1.6 | 6 | V | ||
VLDO1 | Fixed output voltage, LDO1 (VLDO1)(3) | 2.8 | V | |||
VLDO2 | Fixed output voltage, LDO2 (VLDO2)(3) | 1.2 | V | |||
IO | Continuous-pass FET current | 300 | mA | |||
ISC | Short-circuit current limit | 2.3 V ≤ VINLDOx | 340 | 825 | mA | |
VINLDOx < 2.3 V | 210 | 825 | ||||
VDO | Dropout voltage (4) | VINLDOx ≥ 2.3 V, IOUT = 250 mA | 370 | mV | ||
VINLDOx < 2.3 V, IOUT = 175 mA | 370 | mV | ||||
Output voltage accuracy | IO = 1 mA to 300 mA, VINLDOx = 2.3 V–6 V,
VLDOx = 1.2 V |
–3.5% | 3.5% | |||
IO = 1 mA to 175 mA, VINLDOx = 1.6 V–6 V,
VLDOx = 1.2 V |
–3.5% | 3.5% | ||||
Load regulation | IO = 1 mA to 300 mA, VINLDOx = 3.6 V
VLDOx = 1.2 V |
–1.5% | 1.5% | |||
Line regulation | VINLDOx = 1.6 V–6 V, VLDOx = 1.2 V at
IO = 1 mA |
–0.5% | 0.5% | |||
PSRR | Power-supply rejection ratio | fNOISE ≤ 10 kHz, COUT ≥ 2.2 μF, VIN = 2.3 V,
VOUT = 1.3 V, IOUT = 10 mA |
40 | dB | ||
RDIS | Internal discharge resistance at VLDOx | EN_LDOx low | 450 | Ω | ||
TSD | Thermal shutdown | Increasing temperature | 150 | °C | ||
Thermal shutdown hysteresis | Decreasing temperature | 30 | °C |