SLVS670L June 2006 – May 2018 TPS65023 , TPS65023B
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
CONTROL SIGNALS: SCLK, SDAT (INPUT) FOR TPS65023 | ||||||
VIH | High level input voltage (except the SDAT pin) | Resistor pullup at SCLK = 4.7 kΩ, pulled to VRTC | 1.3 | VCC | V | |
VIH | High level input voltage for the SDAT pin | Resistor pullup at SDAT = 4.7 kΩ, pulled to VRTC | 1.45 | VCC | V | |
VIL | Low level input voltage | Resistor pullup at SCLK and SDAT = 4.7 kΩ, pulled to VRTC | 0 | 0.4 | V | |
IH | Input bias current | 0.01 | 0.1 | μA | ||
CONTROL SIGNALS: SCLK, SDAT (INPUT) FOR TPS65023B | ||||||
VIH | High level input voltage for the SCLK pin | Rpullup at SCLK = 4.7 kΩ, pulled to VRTC;
For VCC = 2.5 V to 5.25 V |
1.4 | VCC | V | |
VIH | High level input voltage for the SDAT pin | Rpullup at SDAT = 4.7 kΩ, pulled to VRTC;
For VCC = 2.5 V to 5.25 V |
1.69 | VCC | V | |
VIH | High level input voltage for the SDAT pin | Rpullup at SDAT = 4.7 kΩ, pulled to VRTC;
For VCC = 2.5 V to 4.5 V |
1.55 | VCC | V | |
VIL | Low level input voltage | Rpullup at SCLK and SDAT = 4.7 kΩ, pulled to VRTC | 0 | 0.35 | V | |
IH | Input bias current | 0.01 | 0.1 | μA | ||
CONTROL SIGNALS: HOT_RESET, DCDC1_EN, DCDC2_EN, DCDC3_EN, LDO_EN, DEFLDO1, DEFLDO2 | ||||||
VIH | High-level input voltage | 1.3 | VCC | V | ||
VIL | Low-level input voltage | 0 | 0.4 | V | ||
IIB | Input bias current | 0.01 | 0.1 | μA | ||
tdeglitch | Deglitch time at HOT_RESET | 25 | 30 | 35 | ms | |
CONTROL SIGNALS: LOWBAT, PWRFAIL, RESPWRON, INT, SDAT (OUTPUT) | ||||||
VOH | High-level output voltage | 6 | V | |||
VOL | Low-level output voltage | IIL = 5 mA | 0 | 0.3 | V | |
Duration of low pulse at RESPWRON | External capacitor 1 nF | 100 | ms | |||
ICONST | Internal charge / discharge current on pin TRESPWRON | Used for generating RESPWRON delay | 1.7 | 2 | 2.3 | μA |
TRESPWRON_LOWTH | Internal lower comparator threshold on pin TRESPWRON | Used for generating RESPWRON delay | 0.225 | 0.25 | 0.275 | V |
TRESPWRON_UPTH | Internal upper comparator threshold on pin TRESPWRON | Used for generating RESPWRON delay | 0.97 | 1 | 1.103 | V |
Resetpwron threshold | VRTC falling | –3% | 2.4 | 3% | V | |
Resetpwron threshold | VRTC rising | –3% | 2.52 | 3% | V | |
ILK | Leakage current | Output inactive high | 0.1 | μA | ||
VLDO1 AND VLDO2 LOW DROPOUT REGULATORS | ||||||
VI | Input voltage range for LDO1, 2 | 1.5 | 6.5 | V | ||
VO(LD01) | LDO1 output voltage range | 1 | 3.15 | V | ||
VO(LDO2) | LDO2 output voltage range | 1 | 3.3 | V | ||
IO | Maximum output current for LDO1, LDO2 | VI = 1.8 V, VO = 1.3 V | 200 | mA | ||
VI = 1.5 V, VO = 1.3 V | 120 | |||||
I(SC) | LDO1 and LDO2 short-circuit current limit | V(LDO1) = GND, V(LDO2) = GND | 400 | mA | ||
Minimum voltage drop at LDO1, LDO2 | IO = 50 mA, VINLDO = 1.8 V | 120 | mV | |||
IO = 50 mA, VINLDO = 1.5 V | 65 | 150 | ||||
IO = 200 mA, VINLDO = 1.8 V | 300 | |||||
Output voltage accuracy for LDO1, LDO2 | IO = 10 mA | –2% | 1% | |||
Line regulation for LDO1, LDO2 | VINLDO1, 2 = VLDO1,2 + 0.5 V
(min. 2.5 V) to 6.5 V, IO = 10 mA |
–1% | 1% | |||
Load regulation for LDO1, LDO2 | IO = 0 mA to 50 mA | –1% | 1% | |||
Regulation time for LDO1, LDO2 | Load change from 10% to 90% | 10 | μs | |||
ANALOGIC SIGNALS DEFDCDC1, DEFDCDC2, DEFDCDC3 | ||||||
VIH | High-level input voltage | 1.3 | VCC | V | ||
VIL | Low-level input voltage | 0 | 0.1 | V | ||
Input bias current | 0.001 | 0.05 | μA | |||
THERMAL SHUTDOWN | ||||||
T(SD) | Thermal shutdown | Increasing junction temperature | 160 | °C | ||
Thermal shutdown hysteresis | Decreasing junction temperature | 20 | °C | |||
INTERNAL UNDERVOLTAGE LOCK OUT | ||||||
UVLO | Internal UVLO | VCC falling | –2% | 2.35 | 2% | V |
V(UVLO_HYST) | Internal UVLO comparator hysteresis | 120 | mV | |||
VOLTAGE DETECTOR COMPARATORS | ||||||
Comparator threshold
(PWRFAIL_SNS, LOWBAT_SNS) |
Falling threshold | –1% | 1 | 1% | V | |
Hysteresis | 40 | 50 | 60 | mV | ||
Propagation delay | 25-mV overdrive | 10 | μs | |||
POWER-GOOD | ||||||
V(PGOODF) | VDCDC1, VDCDC2, VDCDC3, VLDO1, VLDO2, decreasing | –12% | –10% | –8% | ||
V(PGOODR) | VDCDC1, VDCDC2, VDCDC3, VLDO1, VLDO2, increasing | –7% | –5% | –3% |