SLVS849C July   2008  – September 2017 TPS65100-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Main Boost Converter
      2. 7.3.2 VCOM Buffer
      3. 7.3.3 Positive Charge Pump
      4. 7.3.4 Negative Charge Pump
      5. 7.3.5 Linear Regulator Controller
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Power-ON Sequencing (EN, ENR)
      2. 7.4.2 Soft Start
      3. 7.4.3 Fault Protection
      4. 7.4.4 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Supply for a Typical Approximately 7-inch Display
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Boost Converter Design Procedure
            1. 8.2.1.2.1.1 Inductor Selection
            2. 8.2.1.2.1.2 Output Capacitor Selection
            3. 8.2.1.2.1.3 Input Capacitor Selection
            4. 8.2.1.2.1.4 Rectifier Diode Selection
            5. 8.2.1.2.1.5 Converter Loop Design and Stability
            6. 8.2.1.2.1.6 Design Procedure Quick Steps
            7. 8.2.1.2.1.7 Setting the Output Voltage and Selecting the Feedforward Capacitor
          2. 8.2.1.2.2 Negative Charge Pump
          3. 8.2.1.2.3 Positive Charge Pump
            1. 8.2.1.2.3.1 Voltage Doubler Mode
            2. 8.2.1.2.3.2 Voltage Tripler Mode
          4. 8.2.1.2.4 VCOM Buffer
          5. 8.2.1.2.5 Linear Regulator Controller
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Supply for a Typical Approximately 8-inch Display
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage range(2) VIN –0.3 6 V
SUP –0.3 15.5
EN, MODE, ENR –0.3 VI + 0.3
Voltage VCOMIN 14 V
Voltage(2) SW 20 V
Continuous power dissipation See Thermal Information
Operating junction temperature range –40 150 °C
Lead temperature (soldering, 10 seconds) 260 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
Machine model (MM) ±100
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VI Input voltage 2.7 5.8 V
L Inductor(1) 4.7 μH
TA Operating free-air temperature –40 125 °C
(1) See Inductor Selection for further information.

6.4 Thermal Information

THERMAL METRIC(1) TPS65100-Q1 UNIT
PWP (TSSOP)
24 PINS
RθJA Junction-to-ambient thermal resistance 37.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 19.5 °C/W
RθJB Junction-to-board thermal resistance 16.7 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 16.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VI = 3.3 V, EN = VIN, VO1 = 10 V, TJ = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IQ Quiescent current into VIN ENR = VCOMIN = GND, VO3 = 2 × VO1,
Boost converter not switching		 0.7 0.9 mA
IQCharge Charge pump quiescent current into SUP VO1 = SUP = 10 V, VO3 = 2 × VO1 1.7 2.7 mA
VO1 = SUP = 10 V, VO3 = 3 × VO1 3.9 6
IQVCOM VCOM quiescent current into SUP ENR = GND, VO1 = SUP = 10 V 750 1300 μA
IQEN LDO controller quiescent current into VIN ENR = VIN, EN = GND 300 800 μA
ISD Shutdown current into VIN EN = ENR = GND 1 10 μA
VUVLO Undervoltage lockout threshold VIN falling 2.2 2.4 V
Thermal shutdown Temperature rising 160 °C
LOGIC SIGNALS EN, ENR
VIH High-level input voltage 1.5 V
VIL Low-level input voltage 0.4 V
ILeak Input leakage current EN = GND or VIN 0.01 0.1 μA
MAIN BOOST CONVERTER
VO1 Output voltage range 5 15 V
VO1 - VI Minimum input to output
voltage difference		 1 V
VREF Reference voltage 1.198 1.213 1.230 V
VFB Feedback regulation voltage 1.126 1.146 1.161 V
IFB Feedback input bias current 10 100 nA
rDS(ON) N-MOSFET on-resistance (Q1) VO1 = 10 V, Isw = 500 mA 195 325 mΩ
VO1 = 5 V, Isw = 500 mA 285 455
ILIM N-MOSFET switch current limit (Q1) 1.6 2.3 2.7 A
rDS(ON) P-MOSFET on-resistance (Q2) VO1 = 10 V, Isw = 100 mA 9 15 Ω
VO1 = 5 V, Isw = 100 mA 14 22
IMAX Maximum P-MOSFET peak switch current 1 A
ILeak Switch leakage current Vsw = 15 V 1 10 μA
fSW Oscillator frequency 0°C ≤ TJ ≤ 125°C 1.195 1.6 2.1 MHz
–40°C ≤ TJ ≤ 125°C 1.091 1.6 2.1
Line regulation 2.7 V ≤ VI ≤ 5.7 V, Iload = 100 mA 0.012 %/V
Load regulation 0 mA ≤ IO ≤ 300 mA 0.2 %/A
NEGATIVE CHARGE PUMP VO2
VO2 Output voltage range –2 V
VREF Reference voltage 1.198 1.213 1.226 V
VFB Feedback regulation voltage –36 0 36 mV
IFB Feedback input bias current 10 100 nA
rDS(ON) Q8 P-channel switch rDS(ON) IO = 20 mA 4.3 8 Ω
Q9 N-channel switch rDS(ON) 2.9 4.4
IO Maximum output current 20 mA
Line regulation 7 V ≤ VO1 ≤ 15 V, Iload = 10 mA, VO2 = –5 V 0.09 %/V
Load regulation 1 mA ≤ IO ≤ 20 mA, VO2 = –5 V 0.126 %/mA
POSITIVE CHARGE PUMP VO3
VO3 Output voltage range 30 V
VREF Reference voltage 1.198 1.213 1.226 V
VFB Feedback regulation voltage 1.180 1.214 1.245 V
IFB Feedback input bias current 10 100 nA
rDS(ON) Q3 P-channel switch rDS(ON) IO = 20 mA 9.9 15.5 Ω
Q4 N-channel switch rDS(ON) 1.1 1.8
Q5 P-channel switch rDS(ON) 4.6 8.5
Q6 N-channel switch rDS(ON) 1.2 2.2
VD D1–D4 Shottky diode forward voltage ID1–D4 = 40 mA 610 800 mV
IO Maximum output current 20 mA
Line regulation 10 V ≤ VO1 ≤ 15 V, Iload = 10 mA, VO3 = 27 V 0.56 %/V
Load regulation 1 mA ≤ IO ≤ 20 mA, VO3 = 27 V 0.05 %/mA
LINEAR REGULATOR CONTROLLER VO4
VO4 Output voltage 4.5 V ≤ VI ≤ 5.5 V, 10 mA ≤ IO ≤ 500 mA 3.2 3.3 3.4 V
IBASE Maximum base drive current VI - VO4 - VBE ≥ 0.5 V (1) 13.5 19 mA
VI - VO4 - VBE ≥ 0.75 V (1) 20 27
Line regulation 4.75 V ≤ VI ≤ 5.5 V, Iload = 500 mA 0.186 %/V
Load regulation 1 mA ≤ IO ≤ 500 mA, VI = 5 V 0.064 %/A
Start up current VO4 ≤ 0.8 V 11 20 25 mA
VCOM BUFFER
VCM Common mode input range 2.25 (VO1) - 2 V
VOS Input offset voltage IO = 0 mA –25 25 mV
DC Load regulation IO = ±25 mA –30 37 mV
IO = ±50 mA –45 55
IO = ±100 mA –72 85
IO = ±150 mA –97 110
IB VCOMIN Input bias current –300 –30 300 nA
IPeak Peak output current VO1 = 15 V 1.2 A
VO1 = 10 V 0.65 A
VO1 = 5 V 0.15 A
FAULT PROTECTION THRESHOLDS
V(th, Vo1) Shutdown threshold VO1 Rising –12 –8.75% VO1 –6 V
V(th, Vo2) VO2 Rising –13 –9% VO2 –5 V
V(th, Vo3) VO3 Rising –11 –8% VO3 –5 V
(1) With VI = supply voltage of the TPS65100-Q1, VO4 = output voltage of the regulator, VBE = basis emitter voltage of external transistor

6.6 Typical Characteristics

TPS65100-Q1 rdson_v_tj_lvs849.gif Figure 1. rDS(ON) N-Channel Main Switch vs
Junction Temperature
TPS65100-Q1 swf_v_tj_lvs849.gif Figure 2. Switching Frequency vs Junction Temperature