SLVS497F SEPTEMBER   2003  – June 2016 TPS65140 , TPS65141 , TPS65145

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dissipation Ratings
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Main Boost Converter
      2. 7.3.2 Power Good Output
      3. 7.3.3 Enable and Power-On Sequencing (EN, ENR)
      4. 7.3.4 Positive Charge Pump
      5. 7.3.5 Negative Charge Pump
      6. 7.3.6 Linear Regulator Controller
      7. 7.3.7 Soft Start
      8. 7.3.8 Fault Protection
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enabling and Disabling the Device
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Boost Converter Design Procedure
          1. 8.2.2.1.1  Inductor Selection
          2. 8.2.2.1.2  Output Capacitor Selection
          3. 8.2.2.1.3  Input Capacitor Selection
          4. 8.2.2.1.4  Rectifier Diode Selection
          5. 8.2.2.1.5  Converter Loop Design and Stability
          6. 8.2.2.1.6  Design Procedure Quick Steps
          7. 8.2.2.1.7  Setting the Output Voltage and Selecting the Feedforward Capacitor
          8. 8.2.2.1.8  Compensation
          9. 8.2.2.1.9  Negative Charge Pump
          10. 8.2.2.1.10 Positive Charge Pump
          11. 8.2.2.1.11 Linear Regulator Controller
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|24
  • PWP|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltages on pin VIN(2) –0.3 6 V
Voltages on pin VO1, SUP, PG (2) –0.3 15.5 V
Voltages on pin EN, MODE, ENR(2) –0.3 VI+ 0.3 V
Voltage on pin SW(2) 20 V
Power good maximum sink current (PG) 1 mA
Continuous power dissipation See Dissipation Ratings
Lead temperature (soldering, 10 s) 260 °C
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VI Input voltage 2.7 5.8 V
L Inductor(1) 4.7 µH
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C
(1) See the application information section for further information.

6.4 Thermal Information

THERMAL METRIC(1) TPS6514x UNIT
PWP (HTSSOP) RGE (VQFN)
24 PINS 24 PINS
RθJA Junction-to-ambient thermal resistance 37.2 34.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 18.9 35.5 °C/W
RθJB Junction-to-board thermal resistance 16.4 11.7 °C/W
ψJT Junction-to-top characterization parameter 0.4 0.4 °C/W
ψJB Junction-to-board characterization parameter 16.2 11.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.1 3.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

VI = 3.3 V, EN = VIN, VO1 = 10 V, TA= –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage 2.7 5.5 V
IQ Quiescent current into VIN ENR = GND, VO3 = 2 × VO1,
Boost converter not switching		 0.7 0.9 mA
IQCharge Charge pump quiescent current into SUP VO1 = SUP = 10 V, VO3 = 2 × VO1 1.7 2.7 mA
VO1 = SUP = 10 V, VO3 = 3 × VO1 3.9 6
IQEN LDO controller quiescent current into VIN ENR = VIN, EN = GND 300 800 μA
ISD Shutdown current into VIN EN = ENR = GND 1 10 μA
VUVLO Undervoltage lockout threshold VI falling 2.2 2.4 V
Thermal shutdown Temperature rising 160 °C
LOGIC SIGNALS EN, ENR
VIH High level input voltage 1.5 V
VIL Low level input voltage 0.4 V
II Input leakage current EN = GND or VIN 0.01 0.1 µA
MAIN BOOST CONVERTER
VO1 Output voltage 5 15 V
VO1 – VIN Minimum input to output voltage difference 1 V
VREF Reference voltage 1.205 1.213 1.219 V
VFB Feedback regulation
voltage		 1.136 1.146 1.154 V
IFB Feedback input bias
current		 10 100 nA
rDS(on) N-MOSFET ON-resistance (Q1) VO1 = 10 V, ISW = 500 mA 195 290 mΩ
VO1 = 5 V, ISW = 500 mA 285 420
ILIM N-MOSFET switch current limit (Q1) TPS65140, TPS65141 1.6 2.3 2.6 A
TPS65145 0.96 1.37 1.56 A
rDS(on) P-MOSFET ON-resistance (Q2) VO1 = 10 V, ISW = 100 mA 9 15 Ω
VO1 = 5 V, ISW = 100 mA 14 22
IMAX Maximum P-MOSFET peak switch current 1 A
ILEAK Switch leakage current VSW = 15 V 1 10 µA
fSW Oscillator frequency 0°C ≤ TA ≤ 85°C 1.295 1.6 2.1 MHz
–40°C ≤ TA ≤ 85°C 1.191 1.6 2.1
Line regulation 2.7 V ≤ VI ≤ 5.7 V; ILOAD = 100 mA 0.012 %/V
Load regulation 0 mA ≤ IO ≤ 300 mA 0.2 %/A
NEGATIVE CHARGE PUMP VO2
VO2 Output voltage –2 V
VREF Reference voltage 1.205 1.213 1.219 V
VFB Feedback regulation
voltage		 –36 0 36 mV
IFB Feedback input bias
current		 10 100 nA
rDS(on) Q8 P-Channel switch rDS(on) IO = 20 mA 4.3 8 Ω
Q9 N-Channel switch rDS(on) 2.9 4.4
IO Maximum output current 20 mA
Line regulation 7 V ≤ VO1 ≤ 15 V, ILOAD = 10 mA,
VO2 = –5 V		 0.09 %/V
Load regulation 1 mA ≤ IO ≤ 20 mA, VO2 = –5 V 0.126 %/mA
POSITIVE CHARGE PUMP VO3
VO3 Output voltage 30 V
VREF Reference voltage 1.205 1.213 1.219 V
VFB Feedback regulation
voltage		 1.187 1.214 1.238 V
IFB Feedback input bias
current		 10 100 nA
rDS(on) Q3 P-Channel switch rDS(on) IO = 20 mA 9.9 15.5 Ω
Q4 N-Channel switch rDS(on) 1.1 1.8
Q5 P-Channel switch rDS(on) 4.6 8.5
Q6 N-Channel switch rDS(on) 1.2 2.2
VD D1 – D4 Shottky diode
forward voltage		 ID1 – D4 = 40 mA 610 720 mV
IO Maximum output current 20 mA
Line regulation 10 V ≤ VO1 ≤ 15 V, ILOAD = 10 mA,
VO3 = 27 V		 0.56 %/V
Load regulation 1 mA ≤ IO ≤ 20 mA, VO3 = 27 V 0.05 %/mA
LINEAR REGULATOR CONTROLLER VO4
VO4 Output voltage 4.5 V ≤ VI ≤ 5.5 V; 10 mA ≤ IO ≤ 500 mA 3.2 3.3 3.4 V
IBASE Maximum base drive
current		 VIN – VO4 – VBE ≥ 0.5 V(1) 13.5 19 mA
VIN – VO4 – VBE ≥ 0.75 V (1) 20 27
Line regulation 4.75 V ≤ VI ≤ 5.5 V, ILOAD = 500 mA 0.186 %/V
Load regulation 1 mA ≤ IO ≤ 500 mA, VI = 5 V 0.064 %/A
Start-up current VO4 ≤ 0.8 V 11 20 25 mA
SYSTEM POWER GOOD (PG)
V(PG, VO1) Power good threshold(2) –12 –8.75% VO1 –6 V
V(PG, VO2) –13 –9.5% VO2 –5 V
V(PG, VO3) –11 –8% VO3 –5 V
VOL PG output low voltage I(sink) = 500 μA 0.3 V
IL PG output leakage current VPG = 5 V 0.001 1 µA
(1) With VI = supply voltage of the TPS6514x, VO4 = output voltage of the regulator, VBE = basis emitter voltage of external transistor.
(2) The power good goes high when all 3 outputs (VO1, VO2, VO3) are above their threshold. The power good goes low as soon as one of the outputs is below their threshold.

6.6 Dissipation Ratings

PACKAGE RθJA TA ≤ 25°C POWER RATING TA = 70°C POWER RATING TA = 85°C POWER RATING
24-Pin TSSOP 30.13 C°/W (PWP soldered) 3.3 W 1.83 W 1.32 W
24-Pin VQFN 30 C°/W 3.3 W 1.8 W 1.3 W

6.7 Typical Characteristics

TPS65140 TPS65141 TPS65145 swf_v_ta_lvs497.gif Figure 1. Switching Frequency vs Free-Air Temperature
TPS65140 TPS65141 TPS65145 rdson_v_ta_lvs497.gif Figure 2. rDS(on) N-Channel Main Switch
vs Free-Air Temperature