SLUSDQ8D
december 2019 – may 2023
TPS652353
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Timing Requirements
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Boost Converter
7.3.2
Linear Regulator and Current Limit
7.3.3
Boost Converter Current Limit
7.3.4
Charge Pump
7.3.5
Slew Rate Control
7.3.6
Short Circuit Protection, Hiccup and Overtemperature Protection
7.3.7
Tone Generation
7.3.8
Tone Detection
7.3.9
Audio Noise Rejection
7.3.10
Disable and Enable
7.3.11
Component Selection
7.3.11.1
Boost Inductor
7.3.11.2
Capacitor Selection
7.3.11.3
Surge Components
7.3.11.4
Consideration for Boost Filtering and LNB Noise
7.4
Device Functional Modes
7.5
Programming
7.5.1
Serial Interface Description
7.5.2
TPS652353 I2C Update Sequence
7.6
Register Maps
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
DiSEqc1.x Support
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.3
Application Curves
8.2.2
DiSEqc2.x Support
8.2.2.1
Design Requirements
8.2.2.2
Detailed Design Procedure
8.2.2.3
Application Curve
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Example
9
Device and Documentation Support
9.1
Device Support
9.1.1
Third-Party Products Disclaimer
9.2
Documentation Support
9.2.1
Related Documentation
9.3
Receiving Notification of Documentation Updates
9.4
Support Resources
9.5
Trademarks
9.6
Electrostatic Discharge Caution
9.7
Glossary
10
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RUK|20
MPQF220D
Thermal pad, mechanical data (Package|Pins)
RUK|20
QFND191D
Orderable Information
slusdq8d_oa
slusdq8d_pm
6.7
Typical Characteristics
T
J
= 25°C, V
IN
= 12 V, f
SW
= 1 MHz, C
Boost
= (2 × 22 µF / 35 V) (unless otherwise noted)
T
J
= 25°C, V
IN
= 12 V, f
SW
= 1 MHz, C
Boost
= (2 × 22 µF / 35 V) (unless otherwise noted)
L = 4.7 µH
Figure 6-1
Power Efficiency.
T
J
= 25°C, V
IN
= 12 V, f
SW
= 1 MHz, C
Boost
= (2 × 22 µF / 35 V) (unless otherwise noted)
V
VLNB
=18.2 V
Figure 6-3
Load Regulation
Figure 6-5
Shutdown Current vs Junction Temperature
V
VLNB
= 13.4 V
Figure 6-2
Load Regulation
Figure 6-4
Input Supply Quiescent Current vs Junction Temperature
I
LOAD
= 650 mA
Figure 6-6
LNB Current Limit vs Junction Temperature