SWCS049S June   2010  – August 2018 TPS65911

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison Table
  4. 4Pin Configuration and Functions
    1. 4.1 Pin Attributes
      1.      Pin Attributes
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics: I/O Pullup and Pulldown
    6. 5.6  Electrical Characteristics: Digital I/O Voltage
    7. 5.7  Electrical Characteristics: Power Consumption
    8. 5.8  Electrical Characteristics: Power References and Thresholds
    9. 5.9  Electrical Characteristics: Thermal Monitoring and Shutdown
    10. 5.10 Electrical Characteristics: 32-kHz RTC Clock
    11. 5.11 Electrical Characteristics: Backup Battery Charger
    12. 5.12 Electrical Characteristics: VRTC LDO
    13. 5.13 Electrical Characteristics: VIO SMPS
    14. 5.14 Electrical Characteristics: VDD1 SMPS
    15. 5.15 Electrical Characteristics: VDD2 SMPS
    16. 5.16 Electrical Characteristics: VDDCtrl SMPS
    17. 5.17 Electrical Characteristics: LDO1 and LDO2
    18. 5.18 Electrical Characteristics: LDO3 and LDO4
    19. 5.19 Electrical Characteristics: LDO5
    20. 5.20 Electrical Characteristics: LDO6, LDO7, and LDO8
    21. 5.21 Timing and Switching Characteristics
      1. 5.21.1 I2C Timing and Switching
      2. 5.21.2 Switch-ON and Switch-OFF Sequences and Timing
      3. 5.21.3 Power Control Timing
        1. 5.21.3.1 Device State Control Through PWRON Signal
        2. 5.21.3.2 Device SLEEP State Control
        3. 5.21.3.3 Device Turnon and Turnoff With Rising and Falling Input Voltage
        4. 5.21.3.4 Power Supplies State Control Through EN1 and EN2 Signals
        5. 5.21.3.5 VDD1, VDD2 Voltage Control Through EN1 and EN2 Signals
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  Functional Block Diagram
    3. 6.3  Power Reference
    4. 6.4  Power Resources
    5. 6.5  Embedded Power Controller (EPC)
      1. 6.5.1 State Machine
        1. 6.5.1.1 Device POWER ON Enable Conditions
        2. 6.5.1.2 Device POWER ON Disable Conditions
        3. 6.5.1.3 Device SLEEP Enable Conditions
        4. 6.5.1.4 Device Reset Scenarios
      2. 6.5.2 BOOT Configuration, Switch-ON, and Switch-OFF Sequences
      3. 6.5.3 Control Signals
        1. 6.5.3.1  SLEEP
        2. 6.5.3.2  PWRHOLD
        3. 6.5.3.3  BOOT1
        4. 6.5.3.4  NRESPWRON, NRESPWRON2
        5. 6.5.3.5  CLK32KOUT
        6. 6.5.3.6  PWRON
        7. 6.5.3.7  INT1
        8. 6.5.3.8  EN2 and EN1
        9. 6.5.3.9  GPIO0 to GPIO8
        10. 6.5.3.10 HDRST Input
        11. 6.5.3.11 PWRDN
        12. 6.5.3.12 Comparators: COMP1 and COMP2
        13. 6.5.3.13 Watchdog
        14. 6.5.3.14 Tracking LDO
    6. 6.6  PWM and LED Generators
    7. 6.7  Dynamic Voltage Frequency Scaling and Adaptive Voltage Scaling Operation
    8. 6.8  32-kHz RTC Clock
    9. 6.9  Real Time Clock (RTC)
      1. 6.9.1 Time Calendar Registers
      2. 6.9.2 General Registers
      3. 6.9.3 Compensation Registers
    10. 6.10 Backup Battery Management
    11. 6.11 Backup Registers
    12. 6.12 I2C Interface
      1. 6.12.1 Access Protocols
        1. 6.12.1.1 Single Byte Access
        2. 6.12.1.2 Multiple Byte Access to Several Adjacent Registers
    13. 6.13 Thermal Monitoring and Shutdown
    14. 6.14 Interrupts
    15. 6.15 Register Maps
      1. 6.15.1 Functional Registers
        1. 6.15.1.1 TPS65911_FUNC_REG Registers Mapping Summary
        2. 6.15.1.2 TPS65911_FUNC_REG Register Descriptions
  7. 7Applications, Implementation, and Layout
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 External Component Recommendation
        2. 7.2.2.2 Controller Design Procedure
          1. 7.2.2.2.1 Inductor Selection
          2. 7.2.2.2.2 Selecting the RTRIP Resistor
          3. 7.2.2.2.3 Selecting the Output Capacitors
          4. 7.2.2.2.4 Selecting FETs
          5. 7.2.2.2.5 Bootstrap Capacitor
          6. 7.2.2.2.6 Selecting Input Capacitors
        3. 7.2.2.3 Converter Design Procedure
          1. 7.2.2.3.1 Selecting the Inductor
          2. 7.2.2.3.2 Selecting Output Capacitors
          3. 7.2.2.3.3 Selecting Input Capacitors
      3. 7.2.3 Application Curves
      4. 7.2.4 Layout Guidelines
        1. 7.2.4.1 PCB Layout
      5. 7.2.5 Layout Example
    3. 7.3 Power Supply Recommendations
  8. 8Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Community Resources
      1. 8.4.1 Community Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Package Description

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.13 Electrical Characteristics: VIO SMPS

Over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage on VCCIO and VCC7 (VIN) VOUT = 1.5 V, 1.8 V, or 2.5 V 2.7 5.5 V
VOUT = 3.3 V VOUT 5.5
DC output voltage (VOUT) PWM mode (VIO_PSKIP = 0)
or pulse skip mode IOUT = 0 to IMAX 		VSEL= 00 –3% 1.5 3% V
VSEL = 01 –3% 1.8 3%
VSEL = 10 –3% 2.5 3%
VSEL = 11 –3% 3.3 3%
Power down 0
Rated output current (IOUTmax) ILMAX[1:0] =11 VIO output voltage = 1.5 V 1300 mA
VIO output voltage = 1.8 V 1200
VIO output voltage = 2.5 V 1100
VIO output voltage = 3.3 V 1100
P-channel MOSFET VIN = VINmin 300 mΩ
On-resistance (RDS(ON)_PMOS) VIN = 3.8 V 250 400
P-channel leakage current (ILK_PMOS) VIN = VINMAX, SWIO = 0 V 2 µA
N-channel MOSFET
On-resistance (RDS(ON)_NMOS)		 VIN = VMIN 300 mΩ
VIN = 3.8 V 250 400
N-channel leakage current (ILK_NMOS) VIN = VINmax, SWIO = VINmax 2 µA
PMOS current limit (high-side) Source current load,
VIN = VINmin to VINmax 		ILMAX[1:0] = 00 650 mA
ILMAX[1:0] = 01 1200
ILMAX[1:0] = 10 1700
NMOS current limit (low-side) Source current load
VIN = VINmin to VINmax 		ILMAX[1:0] = 00 650 mA
ILMAX[1:0] = 01 1200
ILMAX[1:0] = 10 1700
Sink current load
VIN = VINmin to VINmax 		ILMAX[1:0] = 00 800
ILMAX[1:0] = 01 1200
ILMAX[1:0] = 10 1700
DC load regulation On mode, IOUT = 0 to IOUTmax 20 mV
DC line regulation On mode, VIN = VINmin to VINmax
at IOUT = IOUTmax 		20 mV
Transient load regulation VIN = 3.8 V, VOUT = 1.8 V
IOUT = 0 to 500 mA, maximum slew = 100 mA/µs
IOUT = 700 to 1200 mA, maximum slew = 100 mA/µs		 50 mV
Turnon time, ton IOUT = 200 mA 350 µs
Overshoot SMPS turned on 3%
Power-save mode ripple voltage PFM (Pulse skip mode) mode, IOUT = 1 mA 0.025 × VOUT VPP
Switching frequency 2.7 3 3.3 MHz
Duty cycle 100%
Minimum on time (TON(MIN)) P-channel MOSFET 35 ns
Discharge resistor for power-down sequence (RDIS) 30 50 Ω
VFBIO internal resistance 0.5 1 MΩ
Ground current (IQ) Off 1 µA
PWM mode, IOUT = 0 mA, VIN = 3.8 V, VIO_PSKIP = 0 7500
PFM (pulse skipping) mode, no switching, 3-MHz clock on 250
Low-power (pulse skipping) mode,
no switching ST[1:0] = 11		 63
Conversion efficiency PWM mode, DCRL < 50 mΩ,
VOUT = 1.8 V, VIN = 3.6 V:		 IOUT = 10 mA 40%
IOUT = 100 mA 83%
IOUT = 400 mA 85%
IOUT = 800 mA 80%
IOUT = 1200 mA 75%
PFM mode, DCRL < 50 mΩ,
VOUT = 1.8 V, VIN = 3.6 V		 IOUT = 1 mA 68%
IOUT = 10 mA 80%
IOUT = 400 mA 85%