SWCS106F March   2013  – July 2016 TPS659119-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Characteristics
    5. 7.5  External Component Recommendation
    6. 7.6  I/O Pullup and Pulldown Characteristics
    7. 7.7  Digital I/O Voltage Electrical Characteristics
    8. 7.8  I2C Interface and Control Signals
    9. 7.9  Switching Characteristics—I2C Interface and Control Signals
    10. 7.10 Power Consumption
    11. 7.11 Power References and Thresholds
    12. 7.12 Thermal Monitoring and Shutdown
    13. 7.13 32-kHz RTC Clock
    14. 7.14 VRTC LDO
    15. 7.15 VIO SMPS
    16. 7.16 VDD1 SMPS
    17. 7.17 VDD2 SMPS
    18. 7.18 EXTCTRL
    19. 7.19 LDO1 AND LDO2
    20. 7.20 LDO3 and LDO4
    21. 7.21 LDO5
    22. 7.22 LDO6 and LDO7
    23. 7.23 LDO8
    24. 7.24 Timing Requirements for Boot Sequence Example
    25. 7.25 Power Control Timing Requirements
    26. 7.26 Device SLEEP State Control Timing Requirements
    27. 7.27 Supplies State Control Through EN1 and EN2 Timing Characteristics
    28. 7.28 VDD1 Supply Voltage Control Through EN1 Timing Requirements
    29. 7.29 Typical Characteristics
      1. 7.29.1 VIO SMPS Curves
      2. 7.29.2 VDD1 SMPS Curves
      3. 7.29.3 VDD2 SMPS Curves
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Reference
      2. 8.3.2 Power Resources
      3. 8.3.3 PWM and LED Generators
      4. 8.3.4 Dynamic-Voltage Frequency Scaling and Adaptive-Voltage Scaling Operation
      5. 8.3.5 32-kHz RTC Clock
      6. 8.3.6 Real-Time Clock (RTC)
      7. 8.3.7 Thermal Monitoring and Shutdown
      8. 8.3.8 Crystal Oscillator Power-On Reset
    4. 8.4 Device Functional Modes
      1. 8.4.1 Embedded Power Controller
        1. 8.4.1.1 State-Machine
          1. 8.4.1.1.1 Device POWER-ON Enable Conditions
          2. 8.4.1.1.2 Device POWER ON Disable Conditions
          3. 8.4.1.1.3 Device SLEEP Enable Conditions
          4. 8.4.1.1.4 Device Reset Scenarios
        2. 8.4.1.2 Boot Configuration and Switch-On and Switch-Off Sequences
        3. 8.4.1.3 Control Signals
          1. 8.4.1.3.1  SLEEP
          2. 8.4.1.3.2  PWRHOLD
          3. 8.4.1.3.3  BOOT1
          4. 8.4.1.3.4  NRESPWRON, NRESPWRON2
          5. 8.4.1.3.5  CLK32KOUT
          6. 8.4.1.3.6  PWRON
          7. 8.4.1.3.7  INT1
          8. 8.4.1.3.8  EN2 and EN1
          9. 8.4.1.3.9  GPIO0-8
          10. 8.4.1.3.10 HDRST Input
          11. 8.4.1.3.11 PWRDN
          12. 8.4.1.3.12 Watchdog
          13. 8.4.1.3.13 Tracking LDO
    5. 8.5 Programming
      1. 8.5.1 Time-Calendar Registers
      2. 8.5.2 General Registers
      3. 8.5.3 Compensation Registers
      4. 8.5.4 Backup Registers
      5. 8.5.5 I2C Interface
        1. 8.5.5.1 Addressing
        2. 8.5.5.2 Access Protocols
          1. 8.5.5.2.1 Single-Byte Access
          2. 8.5.5.2.2 Multiple-Byte Access To Several Adjacent Registers
      6. 8.5.6 Interrupts
    6. 8.6 Register Maps
      1. 8.6.1 Functional Registers
      2. 8.6.2 TPS659119-Q1_FUNC_REG Register Mapping Summary
      3. 8.6.3 TPS659119-Q1_FUNC_REG Register Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Step-down Converter Input Capacitors
        2. 9.2.2.2 Step-down Converter Output Capacitors
        3. 9.2.2.3 Step-down Converter Inductors
        4. 9.2.2.4 LDO Input Capacitors
        5. 9.2.2.5 LDO Output Capacitors
        6. 9.2.2.6 VCC7
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12 Device and Documentation Support

12.1 Device Support

12.1.1 Device Nomenclature

Table 92. Acronyms, Abbreviations, and Definitions

ACRONYM DEFINITION
DDR Dual-Data Rate (memory)
ES Engineering Sample
ESD Electrostatic Discharge
FET Field Effect Transistor
EPC Embedded Power Controller
FSM Finite State Machine
GND Ground
GPIO General-Purpose I/O
HBM Human Body Model
HD Hot-Die
HS-I2C High-Speed I2C
I2C Inter-Integrated Circuit
IC Integrated Circuit
ID Identification
IDDQ Quiescent Supply Current
IEEE Institute of Electrical and Electronics Engineers
IR Instruction Register
I/O Input/Output
JEDEC Joint Electron Device Engineering Council
JTAG Joint Test Action Group
LBC7 Lin Bi-CMOS 7 (360 nm)
LDO Low Drop Output Voltage Linear Regulator
LP Low-Power Application Mode
LSB Least Significant Bit
MMC Multimedia Card
MOSFET Metal Oxide Semiconductor Field Effect Transistor
NVM Nonvolatile Memory
OD Open Drain
OMAP™ Open Multimedia Application Platform™
RTC Real-Time Clock
SMPS Switched Mode Power Supply
SPI Serial Peripheral Interface
POR Power-On Reset

12.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 Trademarks

E2E is a trademark of Texas Instruments.

OMAP is a trademark of TI.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.