SLVSFN9 Data sheet

SLVSFN9A September 2020 – August 2021 TPS65988DK

PRODUCTION DATA

6.12 I/O Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SPI
SPI_VIH	High-level input voltage	LDO_1V8 = 1.8 V	1.3			V
SPI_VIL	Low input voltage	LDO_1V8 = 1.8 V			0.63	V
SPI_HYS	Input hysteresis voltage	LDO_1V8 = 1.8 V	0.09			V
SPI_ILKG	Leakage current	Output is Hi-Z, VIN = 0 to LDO_3V3	-1		1	µA
SPI_VOH	SPI output high voltage	IO = –2 mA, LDO_3V3 = 3.3 V	2.88			V
SPI_VOL	SPI output low voltage	IO = 2 mA			0.4	V
SWDIO
SWDCLK
GPIO
GPIO_VIH	High-level input voltage	LDO_1V8 = 1.8 V	1.3			V
GPIO_VIL	Low input voltage	LDO_1V8 = 1.8 V			0.63	V
GPIO_HYS	Input hysteresis voltage	LDO_1V8 = 1.8 V	0.09			V
GPIO_ILKG	I/O leakage current	INPUT = 0 V to VDD	–1		1	µA
GPIO_RPU	Pullup resistance	Pullup enabled	50	100	150	kΩ
GPIO_RPD	Pulldown resistance	Pulldown enabled	50	100	150	kΩ
GPIO_DG	Digital input path deglitch			20		ns
GPIO_VOH	GPIO output high voltage	IO = –2 mA, LDO_3V3 = 3.3 V	2.88			V
GPIO_VOL	GPIO output low voltage	IO = 2 mA, LDO_3V3 = 3.3 V			0.4	V
I2C_IRQx
OD_VOL	Low-level output voltage	I_OL = 2 mA			0.4	V
OD_LKG	Leakage current	Output is Hi-Z, VIN = 0 to LDO_3V3	–1		1	µA