SLVSEW8B August   2019  – December 2019 TPS66020 , TPS66021

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Function Table
      1.      TPS6602x Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Recommended Supply Load Capacitance
    5. 6.5  Thermal Information
    6. 6.6  PP5V Power Switch Characteristics
    7. 6.7  PPHV Power Switch Characteristics
    8. 6.8  Power Path Supervisory
    9. 6.9  VBUS LDO Characteristics
    10. 6.10 Thermal Shutdown Characteristics
    11. 6.11 Input-output (I/O) Characteristics
    12. 6.12 Power Consumption Characteristics
    13. 6.13 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 5-V Source (PP5V Power Path)
        1. 8.3.1.1 PP5V Current Limit
        2. 8.3.1.2 PP5V Reverse Current Protection (RCP)
      2. 8.3.2 20-V Sink (PPHV Power Path)
        1. 8.3.2.1 PPHV Soft Start
        2. 8.3.2.2 PPHV Reverse Current Protection (RCP)
      3. 8.3.3 Overtemperature Protection
      4. 8.3.4 VBUS Overvoltage Protection (OVP)
      5. 8.3.5 Power Management and Supervisory
        1. 8.3.5.1 Supply Connections
        2. 8.3.5.2 Power Up Sequences
          1. 8.3.5.2.1 Normal Power Up
          2. 8.3.5.2.2 Dead Battery Operation
    4. 8.4 Device Functional Modes
      1. 8.4.1 State Transitions
        1. 8.4.1.1 DISABLED State
        2. 8.4.1.2 SRC 1.5-A State
        3. 8.4.1.3 SRC 3-A State
        4. 8.4.1.4 SNK State
        5. 8.4.1.5 FRS (Fast Role Swap) State
      2. 8.4.2 SRC FAULT State
      3. 8.4.3 SNK FAULT State
      4. 8.4.4 Device Functional Mode Summary
      5. 8.4.5 Enabling the PP5V Source Path
      6. 8.4.6 Enabling the PPHV Sink Path
      7. 8.4.7 Fast Role Swap (FRS)
        1. 8.4.7.1 Overview
        2. 8.4.7.2 Fast Role Swap Use Cases
        3. 8.4.7.3 Fast Role Swap Sequence
      8. 8.4.8 Faults
        1. 8.4.8.1 Fault Types
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 External Current Reference Resistor (RIREF)
        2. 9.2.2.2 External VLDO Capacitor (CVLDO)
        3. 9.2.2.3 PP5V Power Path Capacitance
        4. 9.2.2.4 PPHV, VBUS Power Path Capacitance
        5. 9.2.2.5 VBUS TVS Protection (Optional)
        6. 9.2.2.6 VBUS Schottky Diode Protection (Optional)
        7. 9.2.2.7 VBUS Overvoltage Protection (Optional)
        8. 9.2.2.8 Dead Battery Support
        9. 9.2.2.9 Fast Role Swap (FRS) (Optional)
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Power Supply Recommendations

The device has a single input supply, VIN. VIN may be shared with PP5V when using the TPS66021 device. When shared with PP5V, the capacitance required on PP5V is sufficient for the VIN supply. When VIN is not shared, a 1-uF or higher ceramic bypass capacitor between VIN and GND is recommended as close to the VIN as possible for local noise decoupling.

USB Specification Revisions 2.0 and 3.1 require VBUS voltage at the connector to be between 4.75 V to 5.5 V. Depending on layout and routing from supply to the connector the voltage droop on VBUS has to be tightly controlled. Locate the input supply close to the device. For all applications, a maximum 10-μF ceramic bypass capacitor between VBUS and GND is recommended as close to the Type-C connector of the device as possible for local noise decoupling. The input power supply should be rated higher than the current limit set to avoid voltage droops during overcurrent and short-circuit conditions.