SLVSEW9B August   2019  – December  2019 TPS66120 , TPS66121

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Function Table
      1.      TPS6612x Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Recommended Supply Load Capacitance
    5. 6.5  Thermal Information
    6. 6.6  PPHV Power Switch Characteristics
    7. 6.7  Power Path Supervisory
    8. 6.8  VBUS LDO Characteristics
    9. 6.9  Thermal Shutdown Characteristics
    10. 6.10 Input-output (I/O) Characteristics
    11. 6.11 Power Consumption Characteristics
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 20-V Sink (PPHV Power Path)
        1. 7.3.1.1 PPHV Soft Start
        2. 7.3.1.2 PPHV Reverse Current Protection (RCP)
      2. 7.3.2 Overtemperature Protection
      3. 7.3.3 VBUS Overvoltage Protection (OVP)
      4. 7.3.4 Power Management and Supervisory
        1. 7.3.4.1 Supply Connections
        2. 7.3.4.2 Power Up Sequences
          1. 7.3.4.2.1 Normal Power Up
          2. 7.3.4.2.2 Dead Battery Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Transitions
        1. 7.4.1.1 DISABLED State
        2. 7.4.1.2 SNK State
      2. 7.4.2 SNK FAULT State
      3. 7.4.3 Device Functional Mode Summary
      4. 7.4.4 Enabling the PPHV Sink Path
      5. 7.4.5 Faults
        1. 7.4.5.1 Fault Types
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External VLDO Capacitor (CVLDO)
        2. 8.2.2.2 PPHV, VBUS Power Path Capacitance
        3. 8.2.2.3 VBUS TVS Protection (Optional)
        4. 8.2.2.4 VBUS Schottky Diode Protection (Optional)
        5. 8.2.2.5 VBUS Overvoltage Protection (Optional)
        6. 8.2.2.6 Dead Battery Support
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.