SLVSEW9B August   2019  – December  2019 TPS66120 , TPS66121

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Function Table
      1.      TPS6612x Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Recommended Supply Load Capacitance
    5. 6.5  Thermal Information
    6. 6.6  PPHV Power Switch Characteristics
    7. 6.7  Power Path Supervisory
    8. 6.8  VBUS LDO Characteristics
    9. 6.9  Thermal Shutdown Characteristics
    10. 6.10 Input-output (I/O) Characteristics
    11. 6.11 Power Consumption Characteristics
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 20-V Sink (PPHV Power Path)
        1. 7.3.1.1 PPHV Soft Start
        2. 7.3.1.2 PPHV Reverse Current Protection (RCP)
      2. 7.3.2 Overtemperature Protection
      3. 7.3.3 VBUS Overvoltage Protection (OVP)
      4. 7.3.4 Power Management and Supervisory
        1. 7.3.4.1 Supply Connections
        2. 7.3.4.2 Power Up Sequences
          1. 7.3.4.2.1 Normal Power Up
          2. 7.3.4.2.2 Dead Battery Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 State Transitions
        1. 7.4.1.1 DISABLED State
        2. 7.4.1.2 SNK State
      2. 7.4.2 SNK FAULT State
      3. 7.4.3 Device Functional Mode Summary
      4. 7.4.4 Enabling the PPHV Sink Path
      5. 7.4.5 Faults
        1. 7.4.5.1 Fault Types
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External VLDO Capacitor (CVLDO)
        2. 8.2.2.2 PPHV, VBUS Power Path Capacitance
        3. 8.2.2.3 VBUS TVS Protection (Optional)
        4. 8.2.2.4 VBUS Schottky Diode Protection (Optional)
        5. 8.2.2.5 VBUS Overvoltage Protection (Optional)
        6. 8.2.2.6 Dead Battery Support
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.10 Input-output (I/O) Characteristics

Operating under these conditions unless otherwise noted: -10 ℃ ≤ TJ ≤ 125 ℃, 2.85 V ≤ VVIN ≤ 5.5V, RIREF = 75 kΩ ±1% overall tolerance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
EN_Vt+ Positive going input-threshold voltage, % of VLDO VLDO = 2.85 - 5.5V 40 70 %
EN_Vt- Negative going input-threshold voltage, % of VLDO VLDO = 2.85 - 5.5V 30 60 %
EN_HYS Input hysteresis voltage, % of VLDO VLDO = 2.85 - 5.5V 10 %
EN_RPD Pull-down resistance EN pin. Measured with pin voltage VEN = 3.3V 500 650 800 kΩ
EN_CLAMP Voltage clamp on EN pin. IEN = 100 µA 6 7.1 V
FLT_VOL Output Low Voltage, FLT pin IOL = 2mA, FLT driven low. 0.4 V
FLT_ILKG Leakage Current, FLT pin FLT not driven low. –1 1 µA
tH_FLT Time FLT pin remains asserted low. 4 10 16 ms
tDG_EN Enable deglitch filter. Pulses on EN0 < tDG_EN(MIN) are not propagated to the control logic. Pulses on EN0 > tDG_EN(MAX) are propagated to the control logic. Pulses on EN0 ≥ tDG_EN(MIN) and ≤ tDG_EN(MAX) may or may not propagate to the control logic. 78 242 µs