SBVS128F June 2009 – December 2015 TPS727
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage range, VIN | –0.3 | +6.0 | V | |
Enable voltage range, VEN | –0.3 | +6.0(2) | V | |
Output voltage range, VOUT | –0.3 | +6.0 | V | |
Maximum output current, IOUT | Internally limited | |||
Output short-circuit duration | Indefinite | |||
Operating junction temperature, TJ | –55 | +150 | °C | |
Storage temperature, Tstg | –55 | +150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input voltage | 2 | 5.5 | V | |
IOUT | Output current | 0 | 250 | mA | |
TJ | Operating junction temperature range | –40 | +125 | °C |
THERMAL METRIC(1) | TPS727 | UNITS | ||
---|---|---|---|---|
DSE (WSON) | YFF (DSBGA) | |||
6 PINS | 4 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 190.5 | 160 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 94.9 | 75 | °C/W |
RθJB | Junction-to-board thermal resistance | 149.3 | 76 | °C/W |
ψJT | Junction-to-top characterization parameter | 6.4 | 3 | °C/W |
ψJB | Junction-to-board characterization parameter | 152.8 | 74 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance(2) | N/A | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VIN | Input voltage range | 2.0 | 5.5 | V | ||||
VO | Output voltage range | 0.9 | 5.0 | V | ||||
VOUT (1) | DC output accuracy | TJ = +25°C | –2.5 | +2.5 | mV | |||
VOUT + 0.3 V ≤ VIN ≤ 5.5 V, 0 mA ≤ IOUT ≤ 200 mA |
–2.0% | ±1.0% | +2.0% | |||||
VOUT + 0.3 V ≤ VIN ≤ 5.5 V, 0 mA ≤ IOUT ≤ 250 mA |
±1.0% | |||||||
ΔVOUT | Load transient | 1 mA to 200 mA or 200 mA to 1 mA in 1 μs, COUT = 1 μF |
±50.0 | mV | ||||
1 mA to 250 mA or 250 mA to 1 mA in 1 μs, COUT = 1 μF |
±65 | |||||||
ΔVO/ΔVIN | Line regulation | VOUT(NOM) + 0.3 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA |
8 | μV/V | ||||
ΔVO/ΔIOUT | Load regulation | 0 mA ≤ IOUT ≤ 250 mA | 20 | μV/mA | ||||
VDO | Dropout voltage(2) | VIN = 0.98 × VOUT(NOM), IOUT = 10 mA | 6.5 | mV | ||||
VIN = 0.98 × VOUT(NOM), IOUT = 50 mA | 32.5 | |||||||
VIN = 0.98 × VOUT(NOM), IOUT = 100 mA | 65 | |||||||
VIN = 0.98 × VOUT(NOM), IOUT = 200 mA | 130 | 200 | ||||||
VIN = 0.98 × VOUT(NOM), IOUT = 250 mA | 162.5 | |||||||
ICL | Output current limit | VOUT = 0.9 × VOUT(NOM) | 300 | 400 | 550 | mA | ||
IGND | Ground pin current | IOUT = 0 mA, TJ = –40°C to +125°C | 7.9 | 12 | µA | |||
IOUT = 200 mA | 110 | |||||||
IOUT = 250 mA | 130 | |||||||
ISHDN | Shutdown current (IGND) | VEN ≤ 0.4 V, VIN = 2 V, TJ = +25°C | 0.12 | µA | ||||
VEN ≤ 0.4 V, 2.0 V < VIN ≤ 4.5 V, TJ = –40°C to +85°C |
0.55 | 2 | ||||||
PSRR | Power-supply rejection ratio | VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA |
f = 10 Hz | 85 | dB | |||
f = 100 Hz | 75 | |||||||
f = 1 kHz | 70 | |||||||
f = 10 kHz | 55 | |||||||
f = 100 kHz | 40 | |||||||
f = 1 MHz | 45 | |||||||
VN | Output noise voltage | BW = 100 Hz to 100 kHz, VIN = 2.1 V, VOUT = 1.8 V, IOUT = 10 mA |
33.5 | μVRMS | ||||
tSTR | Startup time(3) | COUT = 1.0 μF, 0 ≤ IOUT ≤ 250 mA | 100 | μs | ||||
VHI | Enable pin high (enabled) | 0.9 | VIN | V | ||||
VLO | Enable pin low (disabled) | 0 | 0.4 | V | ||||
IEN | Enable pin current | EN = 5.5 V | 40 | 500 | nA | |||
UVLO | Undervoltage lock-out | VIN rising | 1.85 | 1.90 | 1.95 | V | ||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | +160 | °C | ||||
Reset, temperature decreasing | +140 | |||||||
TJ | Operating junction temperature | –40 | +125 | °C |
IOUT = 10 mA |
0 mA ≤ IOUT ≤ 10 mA |
VIN = 2.3 V, tR = tF = 1 µs |
Slew rate = 1 V/µs, IOUT = 200 µA |
VIN = 2.1 V, VOUT = 1.8 V, IOUT = 200 mA |