SGLS303G May   2005  – December 2024 TPS732-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Internal Current Limit
      2. 6.3.2 Shutdown
      3. 6.3.3 Dropout Voltage
      4. 6.3.4 Transient Response
      5. 6.3.5 Reverse Current
      6. 6.3.6 Thermal Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Requirements
        2. 7.2.2.2 Output Noise
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Power Dissipation
      4. 7.4.4 Package Mounting
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Dropout Voltage

The TPS732-Q1 family of devices uses an NMOS pass transistor to achieve extremely low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the NMOS pass device is in the linear region of operation and the input-to-output resistance is the RDS-ON of the NMOS pass element.

For large step changes in load current, the TPS732-Q1 family of devices requires a larger voltage drop from VIN to VOUT to avoid degraded transient response. The boundary of this transient dropout region is approximately twice the dc dropout. Values of VIN – VOUT above this line provide normal transient response.

Operating in the transient dropout region can cause an increase in recovery time. The time required to recover from a load transient is a function of the magnitude of the change in load current rate, the rate of change in load current, and the available headroom (VIN to VOUT voltage drop). Under worst-case conditions [full-scale instantaneous load change with (VIN – VOUT) close to dc dropout levels], the TPS732-Q1 family of devices can take a couple of hundred microseconds to return to the specified regulation accuracy.