SLVSAI3B September   2010  – December 2024 TPS736-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Internal Current Limit
      2. 6.3.2 Transient Response
      3. 6.3.3 Reverse Current
      4. 6.3.4 Thermal Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Enable Pin and Shutdown
      2. 6.4.2 Dropout Voltage
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Typical Application Circuit for Fixed-Voltage Versions
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Input And Output Capacitor Requirements
          2. 7.2.1.2.2 Output Noise
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Typical Application Circuit for Adjustable-Voltage Version
        1. 7.2.2.1 Design Requirements
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Example
      2. 7.4.2 Thermal Considerations
      3. 7.4.3 Layout Guidelines
  9. 8 Device And Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, And Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) TPS736-Q1 New silicon TPS736-Q1 Legacy silicon UNIT
DCQ (SOT-223) DBV (SOT-23)
6 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 76 221.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 46.6 74.9 °C/W
RθJB Junction-to-board thermal resistance 18.1 51.9 °C/W
ψJT Junction-to-top characterization parameter 8.6 2.8 °C/W
ψJB Junction-to-board characterization parameter 17.6 51.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.