SBVS080J September 2006 – November 2016 TPS75100 , TPS75103 , TPS75105
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | |
---|---|---|---|
VIN range | –0.3 | 7 | V |
VISET, VENA, VENB, VDX range | –0.3 | VIN | V |
IDX for D1A, D2A, D1B, D2B | 35 | mA | |
D1A, D2A, D1B, D2B short-circuit duration | Indefinite | ||
Continuous total power dissipation | Internally limited | ||
Junction temperature, TJ | –55 | 150 | °C |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
PARAMETER | MIN | NOM | MAX | UNIT | |
---|---|---|---|---|---|
VIN | Input voltage | 2.7 | 5.5 | V | |
IDX | Operating current per LED | 3 | 25 | mA | |
tPWM | On-time for PWM signal | 33 | µs | ||
TJ | Operating junction temperature range | –40 | 85 | °C |
THERMAL METRIC(1) | TPS7510x | UNIT | ||
---|---|---|---|---|
YFF (DSBGA) | DSK (WSON) | |||
9 PINS | 10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 101.6 | 65.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 1.2 | 54.0 | °C/W |
RθJB | Junction-to-board thermal resistance | 17.6 | 39.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.6 | 1.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 17.8 | 39.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 23.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
ISHDN | Shutdown supply current | VENA,B = 0 V, VDX = 0 V | 0.03 | 1 | µA | |||
IGND | Ground current | DSK package | IDX ≤ 5 mA, VIN = 3.8 V | 170 | 230 | µA | ||
IDX > 5 mA, VIN = 3.8 V | 250 | 300 | ||||||
YFF package | IDX ≤ 5 mA, VIN = 4.5 V | 170 | 200 | |||||
IDX > 5 mA, VIN = 4.5 V | 250 | 300 | ||||||
ΔID | Current matching (IDXMAX – IDXMIN / IDXMAX) × 100% |
TA = 25°C | 0% | 2% | 4% | |||
TA = –40°C to +85°C | YFF package | 0% | 5% | |||||
DSK package | 0% | 6% | ||||||
ΔIDX%/ΔVIN | Line regulation | 3.5 V ≤ VIN ≤ 4.5 V, IDX = 5 mA | 2.0 | %/V | ||||
ΔIDX%/ΔVDX | Load regulation | 1.8 V ≤ VDX ≤ 3.5 V, IDX = 5 mA | 0.8 | %/V | ||||
VDO | Dropout voltage of any DX current source (VDX at IDX = 0.8 × IDX, nom) |
IDXnom = 5 mA | 28 | 100 | mV | |||
IDXnom = 15 mA | 70 | |||||||
VISET | Reference voltage for current set | 1.183 | 1.225 | 1.257 | V | |||
IOPEN | Diode current accuracy(1) | ISET = open, VDX = VIN – 0.2 V |
YFF package | 0.5% | 3% | |||
DSK package | 0.5% | 4% | ||||||
ISET | ISET pin current range | 2.5 | 62.5 | µA | ||||
k | ISET to IDX current ratio(1) | 420 | ||||||
VIH | Enable high level input voltage | 1.2 | V | |||||
VIL | Enable low level input voltage | 0.4 | V | |||||
IINA | Enable pin A (VENA) input current | VENA = 3.8 V | 5.0 | 6.1 | µA | |||
VENA = 1.8 V | 2.2 | |||||||
IINB | Enable pin B (VENB) input current | VENB = 3.8 V | 4.0 | 4.9 | µA | |||
VENB = 1.8 V | 1.8 | |||||||
tSD | Shutdown delay time | Delay from ENA and ENB = low to reach shutdown current (IDX = 0.1 × IDX, nom) |
5 | 13 | 30 | µs | ||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 165 | °C | ||||
Reset, temperature decreasing | 140 |