SBVS254D February   2018  – August 2019 TPS7A05

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
      2.      Ground Current vs Output Current
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excellent Transient Response
      2. 7.3.2 Active Discharge
      3. 7.3.3 Low IQ in Dropout
      4. 7.3.4 Undervoltage Lockout (UVLO)
      5. 7.3.5 Enable
      6. 7.3.6 Internal Foldback Current Limit
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disable Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitor Requirements
      3. 8.1.3 Special Considerations When Ramping Down VIN and Enable
      4. 8.1.4 Load Transient Response
      5. 8.1.5 Dropout Voltage
        1. 8.1.5.1 Behavior When Transitioning From Dropout Into Regulation
        2. 8.1.5.2 Behavior of Output Resulting From Line Transient When in Dropout
      6. 8.1.6 Undervoltage Lockout (UVLO) Operation
      7. 8.1.7 Power Dissipation (PD)
        1. 8.1.7.1 Estimating Junction Temperature
        2. 8.1.7.2 Recommended Area for Continuous Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Design Considerations
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.7 Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when thermal junction temperature (TJ) of the main pass-FET rises to Tsd(Shutdown) (typical). Thermal shutdown hysteresis assures that the LDO resets again (turns on) when the temperature falls to Tsd(Reset) (typical).

The thermal time-constant of the semiconductor die is fairly short, and thus the device may cycle on and off when thermal shutdown is reached until power dissipation is reduced.

For reliable operation, limit the junction temperature to a maximum of 125°C. Operation above 125°C causes the device to exceed its operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above a junction temperature of 125°C reduces long-term reliability.

A fast start-up when TJ > Tsd(Reset) (typical, outside of the specified operating range) causes the device thermal shutdown to assert at Tsd(Reset) and prevents the device from turning on until the junction temperature is reduced below Tsd(Shutdown).