SBVS399A December   2021  – May 2022 TPS7A13

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excellent Transient Response
      2. 7.3.2 Global Undervoltage Lockout (UVLO)
      3. 7.3.3 Enable Input
      4. 7.3.4 Internal Foldback Current Limit
      5. 7.3.5 Active Discharge
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disable Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
      2. 8.1.2  Input, Output, and Bias Capacitor Requirements
      3. 8.1.3  Dropout Voltage
      4. 8.1.4  Behavior During Transition From Dropout Into Regulation
      5. 8.1.5  Device Enable Sequencing Requirement
      6. 8.1.6  Load Transient Response
      7. 8.1.7  Undervoltage Lockout Circuit Operation
      8. 8.1.8  Power Dissipation (PD)
      9. 8.1.9  Estimating Junction Temperature
      10. 8.1.10 Recommended Area for Continuous Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Module
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YCK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

specified at TJ = –40°C to +125°C, VIN = VOUT(NOM) + 0.1 V, VBIAS = greater of 2.2 V or VOUT(NOM) + 1.4 V, IOUT = 1 mA, VEN = 1.0 V, CIN = 1 μF, COUT = 1 μF, and CBIAS = 0.1 μF, unless otherwise noted; all typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Accuracy over temperature VOUT(NOM) + 0.1 V ≤ VIN ≤ 2.2 V,
greater of 2.2 V or VOUT(NOM) + 1.4 V ≤ VBIAS ≤ 5.5 V,
1 mA ≤ IOUT ≤ 300 mA		 TJ = –40°C to +85°C –1 1 %
TJ = –40°C to +125°C –1.4 1
ΔVOUT / ΔVIN VIN line regulation  VOUT(NOM) + 0.1 V ≤ VIN ≤ 2.2 V –2.5 0.013 2.5 mV
ΔVOUT / ΔVBIAS VBIAS line regulation VOUT(NOM) + 1.4 V ≤ VBIAS ≤ 5.5 V –2.5 0.02 2.5 mV
ΔVOUT / ΔIOUT Load regulation 1 mA ≤ IOUT ≤ 300 mA 0.49 %/A
IQ(BIAS) Bias pin current  IOUT = 0 mA TJ = –40°C to +85°C 30 µA
TJ = –40°C to +125°C 40
IOUT = 300 mA TJ = –40°C to +125°C 5 mA
IQ(IN) Input pin current(1) IOUT = 0 mA TJ = –40°C to +85°C 5.7 µA
TJ = –40°C to +125°C 17
IGND Ground pin current(1) IOUT = 300 mA 320 500 µA
ISHDN(BIAS) VBIAS  shutdown current VIN = 2.2 V, VBIAS = 5.5 V, VEN ≤ 0.2 V 0.264 12 µA
ISHDN(IN) VIN  shutdown current VIN = 1.8 V, VBIAS = 5.5 V, VEN ≤ 0.2 V,
TJ = –40°C to +85°C		 0.5 5.7 µA
VIN = 1.8 V, VBIAS = 5.5 V, VEN ≤ 0.2 V 0.5 22
ICL Output current limit VOUT = 0.95 × VOUT(NOM) 320 510 750 mA
ISC Short-circuit current limit VOUT = 0 V 177 mA
VDO(IN) VIN dropout voltage(2) VIN = 0.95 × VOUT(nom), IOUT = 300 mA, VOUT ≥ 0.6 V 30 65 mV
VDO(BIAS) VBIAS dropout voltage(2) VBIAS = greater of 1.7 V or VOUT(nom) + 0.6 V,
VSENSE = 0.95 × VOUT(nom), IOUT = 300 mA		 0.9 V
VIN  PSRR VIN  power-supply rejection ratio f = 100 Hz IOUT = 3 mA 90 dB
IOUT = 300 mA 73
f = 1 kHz IOUT = 3 mA 84
IOUT = 300 mA 75
f = 10 kHz IOUT = 3 mA 70
IOUT = 300 mA 60
f = 100 kHz IOUT = 3 mA 53
IOUT = 300 mA 43
f = 1 MHz IOUT = 3 mA 65
IOUT = 300 mA 27
f = 1 MHz,
VIN = VOUT + 150 mV		 IOUT = 3 mA 65
IOUT = 300 mA 42
VBIAS PSRR VBIAS power-supply rejection ratio f = 1 kHz, IOUT = 300 mA 65 dB
f = 100 kHz 47
f = 1 MHz 26
Vn Output voltage noise Bandwidth = 10 Hz to 100 kHz,
VOUT = 0.8 V, IOUT = 300 mA		 7.2 µVRMS
VUVLO(BIAS) Bias supply UVLO VBIAS rising 1.15 1.42 1.7 V
VBIAS falling 1.0 1.3 1.64
VUVLO_HYST(BIAS) Bias supply hysteresis VBIAS hysteresis 95 mV
VUVLO(IN) Input supply UVLO  VIN rising 584 603 623 mV
VIN falling 530 552 566
VUVLO_HYST(IN) Input supply hysteresis VIN hysteresis 55 mV
tSTR Start-up time(3)
 		 200 µs
VHI(EN) EN pin logic high voltage 0.6 V
VLO(EN) EN pin logic low voltage 0.25 V
IEN EN pin current EN = 5.5 V –20 10 30 nA
RPULLDOWN Pulldown resistor VIN = 0.9 V, VOUT(nom) = 0.8 V, VBIAS = 1 V, VEN = 0 V, P version only 36 Ω
TSD Thermal shutdown temperature Shutdown, temperature rising 165 °C
Reset, temperature falling 140
(1) This current flowing from VIN to GND.
(2) Dropout is not measured for VOUT < 0.6 V. VBIAS must be 2.2 V or greater for specified dropout value. 
(3) Startup time = time from EN assertion to 0.95 × VOUT(NOM).