SBVS184A December 2011 – August 2015 TPS7A4201
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | IN pin to GND pin | –0.3 | +30 | V |
OUT pin to GND pin | –0.3 | +30 | V | |
OUT pin to IN pin | –30 | +0.3 | V | |
FB pin to GND pin | –0.3 | +2 | V | |
FB pin to IN pin | –30 | +0.3 | V | |
EN pin to IN pin | –30 | 0.3 | V | |
EN pin to GND pin | –0.3 | +30 | V | |
Current | Peak output | Internally limited | ||
Temperature | Operating junction temperature, TJ | –40 | +125 | °C |
Storage, Tstg | –65 | +150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2500 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | 7 | 28 | V | ||
VOUT | 1.161 | 26 | V | ||
VEN | 0 | 28 | V | ||
IOUT | 0 | 50 | mA |
THERMAL METRIC(1) | TPS7A4201 | UNIT | |
---|---|---|---|
DGN (MSOP) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 66.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 54.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 38.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.0 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 15.5 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VIN | Input voltage range | 7.0 | 28.0 | V | ||||
VREF | Internal reference | TJ = +25°C, VFB = VREF, VIN = 9 V, IOUT = 25 mA | 1.161 | 1.173 | 1.185 | V | ||
VOUT | Output voltage range(1) | VIN ≥ VOUT(NOM) + 2.0 V | VREF | 26 | V | |||
Nominal accuracy | TJ = +25°C, VIN = 9 V, IOUT = 25 mA | –1.0 | +1.0 | %VOUT | ||||
Overall accuracy | VOUT(NOM) + 2.0 V ≤ VIN ≤ 24 V(2)
100 µA ≤ IOUT ≤ 50 mA |
–2.5 | +2.5 | %VOUT | ||||
ΔVO(ΔVI) | Line regulation | 7 V ≤ VIN ≤ 28 V | 0.03 | %VOUT | ||||
ΔVO(ΔVL) | Load regulation | 100 µA ≤ IOUT ≤ 50 mA | 0.31 | %VOUT | ||||
VDO | Dropout voltage | VIN = 17 V, VOUT(NOM) = 18 V, IOUT = 20 mA | 290 | mV | ||||
VIN = 17 V, VOUT(NOM) = 18 V, IOUT = 50 mA | 0.78 | 1.3 | V | |||||
ILIM | Current limit | VOUT = 90% VOUT(NOM), VIN = 7.0 V, TJ ≤ +85°C | 65 | 117 | 200 | mA | ||
VOUT = 90% VOUT(NOM), VIN = 9.0 V | 65 | 128 | 200 | mA | ||||
IGND | Ground current | 7 V ≤ VIN ≤ 28 V, IOUT = 0 mA | 25 | 65 | μA | |||
IOUT = 50 mA | 25 | μA | ||||||
ISHDN | Shutdown supply current | VEN = +0.4 V | 4.1 | 20 | μA | |||
I FB | Feedback current(3) | –0.1 | 0.01 | 0.1 | µA | |||
IEN | Enable current | 7 V ≤ VIN ≤ 28 V, VIN = VEN | 0.02 | 1.0 | μA | |||
VEN_HI | Enable high-level voltage | 1.5 | VIN | V | ||||
VEN_LO | Enable low- level voltage | 0 | 0.4 | V | ||||
VNOISE | Output noise voltage | VIN = 12 V, VOUT(NOM) = VREF, COUT = 10 μF, BW = 10 Hz to 100 kHz |
58 | μVRMS | ||||
VIN = 12 V, VOUT(NOM) = 5 V, COUT = 10 μF, CBYP(4) = 10 nF, BW = 10 Hz to 100 kHz | 73 | μVRMS | ||||||
PSRR | Power-supply rejection ratio | VIN = 12 V, VOUT(NOM) = 5 V, COUT = 10 μF, CBYP(4) = 10 nF, f = 100 Hz | 65 | dB | ||||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | +170 | °C | ||||
Reset, temperature decreasing | +150 | °C | ||||||
TJ | Operating junction temperature range | –40 | +125 | °C |
BOARD | PACKAGE | RθJA | RθJC | DERATING FACTOR ABOVE TA = +25°C | TA ≤ +25°C POWER RATING | TA = +70°C POWER RATING | TA = +85°C POWER RATING |
---|---|---|---|---|---|---|---|
High-K(1) | DGN | 55.9°C/W | 8.47°C/W | 16.6mW/°C | 1.83W | 1.08W | 0.833W |