SBVS118 August   2017 TPS7A47-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit (ICL)
      2. 7.3.2 Enable (EN) And Undervoltage Lockout (UVLO)
      3. 7.3.3 Soft-Start And Inrush Current
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 ANY-OUT Programmable Output Voltage
      2. 7.5.2 Adjustable Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Capacitor Recommendations
          1. 8.2.2.1.1 Input and Output Capacitor Requirements
          2. 8.2.2.1.2 Noise-Reduction Capacitor (CNR)
        2. 8.2.2.2 Dropout Voltage (VDO)
        3. 8.2.2.3 Output Voltage Accuracy
        4. 8.2.2.4 Startup
        5. 8.2.2.5 AC Performance
          1. 8.2.2.5.1 Power-Supply Rejection Ratio (PSRR)
          2. 8.2.2.5.2 Load Step Transient Response
          3. 8.2.2.5.3 Noise
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Dissipation (PD)
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Protection
    4. 10.4 Estimating Junction Temperature
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over junction temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage(2) IN pin (VI) to GND pin –0.4 36 V
EN pin to GND pin –0.4 36
EN pin to IN pin –36 0.4
OUT pin to GND pin –0.4 VI + 0.3
NR pin to GND pin –0.4 VI + 0.3(3)
SENSE/FB pin to GND pin –0.4 VI + 0.3
0P1V pin to GND pin –0.4 2.5
0P2V pin to GND pin –0.4 2.5
0P4V pin to GND pin –0.4 2.5
0P8V pin to GND pin –0.4 2.5
1P6V pin to GND pin –0.4 2.5
3P2V pin to GND pin –0.4 2.5
6P4V1 pin to GND pin –0.4 2.5
6P4V2 pin to GND pin –0.4 2.5
Current Peak output Internally limited
Temperature Operating virtual junction, TJ –40 145 °C
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the network ground terminal.
(3) The absolute maximum rating is VI + 0.3 V or 22 V, whichever is smaller.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2500 V
Charged-device model (CDM), per AEC Q100-011 ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VI Input voltage 3.0 35.0 V
COUT Output capacitor 10 µF
V+EN(HI) Enable high-level voltage 2.0 VI V
V+EN(LO) Enable low-level voltage 0 0.4 V
IO Output current 0 1.0 A
TJ Operating junction temperature –40 145 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS7A47-Q1 UNIT
RGW (VQFN)
20 PINS
RθJA Junction-to-ambient thermal resistance 31.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 21.1 °C/W
RθJB Junction-to-board thermal resistance 10.2 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 10.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at –40°C ≤ TJ ≤ 145°C; VI = VO(nom) + 1.0 V or VI = 3.0 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF; CNR = 10 nF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins open (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VUVLO Undervoltage lockout threshold VI rising 2.67 V
VI falling 2.5
V(REF) Reference voltage V(REF) = V(FB), 1.4 V
VUVLO(HYS) Under-voltage lockout hysteresis 177 mV
VNR Noise reduction pin voltage Using ANY-OUT option VOUT V
In adjustable mode only 1.4
VO Output voltage range COUT = 20 µF, using ANY-OUT option 1.4 20.5 V
COUT = 20 µF, using adjustable option 1.4 34
Nominal VO accuracy TJ = 25°C, COUT = 20 µF –1.0 1.0 %VO
Overall VO accuracy VO(nom) + 1.0 V ≤ VI ≤ 35 V,
0 mA ≤ IO ≤ 1 A, COUT = 20 µF		 –2.5 2.5 %VO
ΔVO(ΔVI) Line regulation VO(nom) + 1.0 V ≤ VI ≤ 35 V 0.092 %VO
ΔVO(ΔIO) Load regulation 0 mA ≤ IO ≤ 1 A 0.3 %VO
V(DO) Dropout voltage VI = 95% VO(nom), IO = 0.5 A 216 mV
VI = 95% VO(nom), IO = 1 A 307 450
I(CL) Current limit VO = 90% VO(nom) 1 1.26 A
I(GND) Ground pin current IO = 0 mA 0.58 1.0 mA
IO = 1 A 6.1
I(EN) Enable pin current VEN = VI 0.78 2 µA
VI = VEN = 35 V 0.81 2
I(SHDN) Shutdown supply current VEN = 0.4 V 2.55 8 µA
VEN = 0.4 V, VI = 35 V 3.04 60
I(FB) Feedback pin current 350 nA
PSRR Power-supply rejection ratio VI = 16 V, VO(nom) = 15 V, COUT = 50 µF,
IO = 500 mA, CNR = 1 µF, f = 1 kHz		 78 dB
Vn Output noise voltage VI = 3 V, VO(nom) = 1.4 V, COUT = 50 µF,
CNR = 1 µF, BW = 10 Hz to 100 kHz		 4.17 µVRMS
VIN = 6 V, VO(nom) = 5 V, COUT = 50 µF,
CNR = 1 µF, BW = 10 Hz to 100 kHz		 4.67
Tsd Thermal shutdown temperature Shutdown, temperature increasing 170 °C
Reset, temperature decreasing 150

6.6 Typical Characteristics

at TJ = 25°C; VI = VO(nom) + 1.0 V or VI = 3.0 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF; CNR = 1 µF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins open (unless otherwise noted)
TPS7A47-Q1 G020_sbvs118.gif
IOUT = 500 mA, COUT = 50 µF, CNR = 1 µF,
BWRMSNOISE (10 Hz, 100 kHz)
Figure 1. Noise vs Output Voltage
TPS7A47-Q1 G002_sbvs118.gif
Figure 3. Load Regulation
TPS7A47-Q1 G005_sbvs118.gif
Figure 5. Enable Voltage Threshold vs Temperature
TPS7A47-Q1 G007_sbvs118.gif
Figure 7. Ground Current vs Output Current
TPS7A47-Q1 G009_sbvs118.gif
Figure 9. Shutdown Current vs Input Voltage
TPS7A47-Q1 G011_sbvs118.gif
IOUT = 1 A, COUT = 50 µF, VIN = 3 V, VOUT = 1.4 V
Figure 11. Power-Supply Rejection Ratio vs
Frequency and CNR
TPS7A47-Q1 G013_sbvs118.gif
CNR = 1 µF, COUT = 50 µF, VIN = 3 V, VOUT = 1.4 V
Figure 13. Power-Supply Rejection Ratio vs
Frequency and IO
TPS7A47-Q1 G015_sbvs118.gif
VOUT = 3.3 V, CNR = 1 µF, COUT = 50 µF, IOUT = 500 mA
Figure 15. Power-Supply Rejection Ratio vs
Frequency and VDO
TPS7A47-Q1 G017_sbvs118.gif
CNR = 1 µF, COUT = 50 µF, IOUT = 500 mA
Figure 17. Power-Supply Rejection Ratio vs
Frequency and VOUT
TPS7A47-Q1 G060_sbvs118.gif
VIN = 5 V, VOUT = 3.3 V, IOUT = 10 mA to 845 mA
Figure 19. Load Transient
TPS7A47-Q1 G062_sbvs118.gif
Startup time = 65 ms, VIN = 6 V, VOUT = 5V, IOUT = 500 mA,
CIN = 10 µF, COUT = 50 µF
Figure 21. Startup
TPS7A47-Q1 G001_sbvs118.gif
Figure 2. Line Regulation
TPS7A47-Q1 G004_sbvs118.gif
Figure 4. Input Voltage Threshold vs Temperature
TPS7A47-Q1 G006_sbvs118.gif
IOUT = 0 µA
Figure 6. Quiescent Current vs Input Voltage
TPS7A47-Q1 G008_sbvs118.gif
Figure 8. Enable Current vs Input Voltage
TPS7A47-Q1 G010_sbvs118.gif
VOUT = 90% VOUT(NOM)
Figure 10. Current Limit vs Input Voltage
TPS7A47-Q1 G012_sbvs112.gif
IOUT = 0.5 A, COUT = 50 µF, VIN = 3 V, VOUT = 1.4 V
Figure 12. Power-Supply Rejection Ratio vs
Frequency and CNR
TPS7A47-Q1 G014_sbvs118.gif
VOUT = 3.3 V, CNR = 1 µF, COUT = 50 µF, IOUT = 50 mA
Figure 14. Power-Supply Rejection Ratio vs
Frequency and VDO
TPS7A47-Q1 G016_sbvs118.gif
VOUT = 3.3 V, CNR = 1 µF, COUT = 50 µF, IOUT = 1 A
Figure 16. Power-Supply Rejection Ratio vs
Frequency and VDO
TPS7A47-Q1 G018_sbvs118.gif
CNR = 1 µF, COUT = 50 µF, IOUT = 1000 mA
Figure 18. Power-Supply Rejection Ratio vs
Frequency and VOUT
TPS7A47-Q1 G061_sbvs118.gif
VIN = 5 V to 15 V, VOUT = 3.3 V, IOUT = 845 mA
Figure 20. Line Transient
TPS7A47-Q1 G019_sbvs118.gif
VOUT = 4.7 V, COUT = 10 µF, CNR = 1 µF, BWRMSNOISE (10 Hz, 100 kHz)
Figure 22. Noise vs Output Current