SLVSDQ3 February 2017 TPS7A4701-EP
PRODUCTION DATA.
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
Voltage(2) | IN pin to GND pin | –0.4 | 36 | V | ||
EN pin to GND pin | –0.4 | 36 | V | |||
EN pin to IN pin | –36 | 0.4 | V | |||
OUT pin to GND pin | –0.4 | 36 | V | |||
NR pin to GND pin | –0.4 | 36 | V | |||
SENSE/FB pin to GND pin | –0.4 | 36 | V | |||
0P1V pin to GND pin | –0.4 | 36 | V | |||
0P2V pin to GND pin | –0.4 | 36 | V | |||
0P4V pin to GND pin | –0.4 | 36 | V | |||
0P8V pin to GND pin | –0.4 | 36 | V | |||
1P6V pin to GND pin | –0.4 | 36 | V | |||
3P2V pin to GND pin | –0.4 | 36 | V | |||
6P4V1 pin to GND pin | –0.4 | 36 | V | |||
6P4V2 pin to GND pin | –0.4 | 36 | V | |||
Current | Peak output | Internally limited | ||||
TJ | Operating virtual junction | –55 | 150 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | –2500 | 2500 | V | |
Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | –500 | 500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VI | 3.0 | 35 | V | ||
VO | 1.4 | 34 | V | ||
VEN | 0 | VIN | V | ||
IO | 0 | 1 | A |
THERMAL METRIC(1) | TPS7A4701-EP | UNIT | |
---|---|---|---|
RGW | |||
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 32.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 27 | °C/W |
RθJB | Junction-to-board thermal resistance | 11.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 11.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.7 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VI | Input voltage range | 3 | 35 | V | ||||
VUVLO | Under-voltage lockout threshold | VI rising | 2.67 | V | ||||
VI falling | 2.5 | |||||||
V(REF) | Reference voltage | V(REF) = V(FB) | 1.4 | V | ||||
VUVLO(HYS) | Under-voltage lockout hysteresis | 177 | mV | |||||
VNR | Noise reduction pin voltage | Using ANY-OUT option | VOUT | V | ||||
Using adjustable option | 1.4 | |||||||
VO | Output voltage range | VI ≥ VO(nom) + 1 V or 3 V (whichever is greater), COUT = 20 µF |
Using ANY-OUT option | 1.4 | 20.5 | V | ||
Using adjustable option | 1.4 | 34 | ||||||
Nominal accuracy | TJ = 25°C, COUT = 20 µF | –1 | 1 | %VO | ||||
Overall accuracy | VO(nom) + 1 V ≤ VI ≤ 35 V, 0 mA ≤ IO ≤ 1 A, COUT = 20 µF |
–3.5 | 3.5 | |||||
ΔVO(ΔVI) | Line regulation | VO(nom) + 1 V ≤ VI ≤ 35 V | 0.092 | %VO | ||||
ΔVO(ΔIO) | Load regulation | 0 mA ≤ IO ≤ 1 A | 0.3 | %VO | ||||
V(DO) | Dropout voltage | VI = 95% VO(nom), IO = 0.5 A | 216 | mV | ||||
VI = 95% VO(nom), IO = 1 A | 307 | 450 | ||||||
I(CL) | Current limit | VO = 90% VO(nom) | 1 | 1.26 | A | |||
I(GND) | Ground pin current | IO = 0 mA | 0.58 | 1 | mA | |||
IO = 1 A | 6.1 | |||||||
I(EN) | Enable pin current | VEN = VI | 0.78 | 2 | µA | |||
VI = VEN = 35 V | 0.81 | 2 | ||||||
I(SHDN) | Shutdown supply current | VEN = 0.4 V | 2.55 | 8 | µA | |||
VEN = 0.4 V, VI = 35 V | 3.04 | 60 | ||||||
V+EN(HI) | Enable high-level voltage | 2 | VI | V | ||||
V+EN(LO) | Enable low-level voltage | 0 | 0.4 | V | ||||
I(FB) | Feedback pin current | 350 | nA | |||||
PSRR | Power-supply rejection ratio | VI = 16 V, VO(nom) = 15 V, COUT = 50 µF, IO = 500 mA, CNR = 1 µF, f = 1 kHz |
78 | dB | ||||
Vn | Output noise voltage | VI = 3 V, VO(nom) = 1.4 V, COUT = 50 µF, CNR = 1 µF, BW = 10 Hz to 100 kHz |
4.17 | µVRMS | ||||
VIN = 6 V, VO(nom) = 5 V, COUT = 50 µF, CNR = 1 µF, BW = 10 Hz to 100 kHz |
4.67 | |||||||
Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 170 | °C | ||||
Reset, temperature decreasing | 150 | |||||||
TJ | Operating junction temperature | –55 | 125 | °C |
IOUT = 500 mA | COUT = 50 µF | CNR = 1 µF |
BWRMSNOISE (10 Hz, 100 kHz) |
IOUT = 1 A | COUT = 50 µF | VIN = 3 V |
VOUT = 1.4 V |
CNR = 1 µF | COUT = 50 µF | VIN = 3 V |
VOUT = 1.4 V |
VOUT = 3.3 V | CNR = 1 µF | COUT = 50 µF |
IOUT = 500 mA |
CNR = 1 µF | COUT = 50 µF | IOUT = 500 mA |
VIN = 5 V | VOUT = 3.3 V | IOUT = 10 mA to 845 mA |
Startup Time = 65 ms | VIN = 6 V | VOUT = 5 V |
IOUT = 500 mA | CIN = 10 µF | COUT = 50 µF |
IOUT = 0 µA |
VOUT = 90% VOUT(NOM) |
IOUT = 0.5 A | COUT = 50 µF | VIN = 3 V |
VOUT = 1.4 V |
VOUT = 3.3 V | CNR = 1 µF | COUT = 50 µF |
IOUT = 50 mA |
VOUT = 3.3 V | CNR = 1 µF | COUT = 50 µF |
IOUT = 1 A |
CNR = 1 µF | COUT = 50 µF | IOUT = 1000 mA |
VIN = 5 V to 15 V | VOUT = 3.3 V | IOUT = 845 mA |
VOUT = 4.7 V | COUT = 10 µF | CNR = 1 µF |
BWRMSNOISE (10 Hz, 100 kHz) |