SBVS412A November   2022  – December 2022 TPS7A53A-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable and Shutdown
      2. 7.3.2 Active Discharge
      3. 7.3.3 Power-Good Output (PG)
      4. 7.3.4 Internal Current Limit
      5. 7.3.5 Thermal Shutdown Protection (TSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input, Output, and Bias Capacitor Requirements
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Output Noise
      4. 8.1.4 Estimating Junction Temperature
      5. 8.1.5 Soft Start, Sequencing, and Inrush Current
      6. 8.1.6 Power-Good Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Board Layout
        2. 8.4.1.2 RTJ Package — High CTE Mold Compound
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RTJ|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.2 Active Discharge

The TPS7A53A-Q1 has an internal active pulldown circuits on the OUT pin.

This active discharge function uses an internal metal-oxide-semiconductor field-effect transistor (MOSFET) that connects a resistor (RPULLDOWN) to ground when the low-dropout resistor (LDO) is disabled in order to actively discharge the output voltage. The active discharge circuit is activated when the device is disabled by driving EN to logic low, when the voltage at IN or BIAS is below the UVLO threshold, or when the regulator is in thermal shutdown.

The discharge time after disabling the device depends on the output capacitance (COUT) and the load resistance (RL) in parallel with the pulldown resistor.

The active pulldown circuit connects the output to GND through a 500-Ω resistor when the device is disabled.

Equation 1. τOUT = (500 × RL / (500 + RL) × COUT

Do not rely on the active discharge circuit for discharging a large amount of output capacitance after the input supply has collapsed because reverse current can flow from the output to the input and can cause damage to the device. Limit reverse current to no more than 5% of the device-rated current.